Tokyo Electron Limited

Osaka University

Wallace Paul Printz

Ian J Brown

Derek Bassett

Mark H Somervell

Steven A Scheer

Carlos A Fonseca

Antonio L P Rotondaro

Michael Carcasi

Benjamen M Rathsack

Joshua Hooge

Teruomi Minami

Antonio Luis Pacheco Rotondaro

Takahiro Furukawa

Kousuke Yoshihara

Gentaro Goshi

Seiji Nagahara

Masami Yamashita

Yuichi Terashita

Yoshihiro Kai

Hisashi Kawano

Katsunori Ichino

Seiichi Tagawa

Naoyuki Okamura

Shuhei Takahashi

Antonio Lp Rotondaro

Techniques are provided to remove the growth of colloidal silica deposits on surfaces of high aspect ratio structures during silicon nitride etch steps. A high selectivity overetch step is used to remove the deposited colloidal silica. The disclosed techniques include the use of phosphoric acid to remove silicon nitride from structures having silicon nitride formed in narrow gap or trench structures having high aspect ratios in which formation of colloidal silica deposits on a surface of the narrow gap or trench through a hydrolysis reaction occurs. A second etch step is used in which the hydrolysis reaction which formed the colloidal silica deposits is reversible, and with the now lower concentration of silica in the nearby phosphoric acid due to the depletion of the silicon nitride, the equilibrium drives the reaction in the reverse direction, dissolving the deposited silica back into solution.

Process and apparatus for processing a nitride structure without silica deposition

A technique to inhibit the growth of colloidal silica deposits on surfaces treated in phosphoric acid is described. In one embodiment, the disclosed techniques include the use of a colloidal silica growth inhibitor as an additive to a phosphoric acid solution utilized for a silicon nitride etch. In some embodiments, the additive may have chemistry that may contain strong anionic groups. A method and apparatus is provided that monitors the silica concentration and/or the colloidal silica growth inhibitor concentration in the phosphoric acid solution during processing and adjusts the amount of those components as needed. Techniques are provided for a method and apparatus to control the additive concentration to be used as well as the silica concentration in the phosphoric acid solution. The techniques described herein provide a high selectivity etch of silicon nitride towards silicon dioxide without the growth of colloidal silica deposits on the exposed surfaces.

Colloidal silica growth inhibitor and associated method and system

An apparatus and method for processing substrates. The method includes positioning a substrate within a processing chamber of a substrate processing system. The substrate includes a layer of a carbon-containing material on a working surface of the substrate. The method also includes receiving hydrogen peroxide vapor in a vapor treatment region of the substrate processing system, generating hydroxyl radical vapor by treating the hydrogen peroxide vapor in the vapor treatment region, and directing the hydroxyl radical vapor and remaining hydrogen peroxide vapor to the working surface of the substrate causing the carbon-containing material to be chemically modified.

Systems and methodologies for vapor phase hydroxyl radical processing of substrates

Methods and systems for PS-CAR photoresist simulation are described. In an embodiment, a method includes determining by simulation at least one process parameter of a lithography process using a radiation-sensitive material. In such an embodiment, the radiation-sensitive material includes: a first light wavelength activation threshold that controls the generation of acid to a first acid concentration in the radiation-sensitive material and controls generation of photosensitizer molecules in the radiation-sensitive material, and a second light wavelength activation threshold that can excite the photosensitizer molecules in the radiation-sensitive material that results in the acid comprising a second acid concentration that is greater than the first acid concentration, the second light wavelength being different from the first light wavelength. In such an embodiment, the method also includes performing a lithography process using the previously-determined at least one process parameter.

Photo-sensitized chemically amplified resist (PS-CAR) simulation

Techniques disclosed herein provide an apparatus and method of spin coating that inhibits the formation of wind marks and other defects from turbulent fluid-flow, thereby enabling higher rotational velocities and decreased drying times, while maintaining film uniformity. Techniques disclosed herein include a fluid-flow member, such as a ring or cover, positioned or suspended above the surface of a wafer or other substrate. The fluid-flow member has a radial curvature that prevents wind marks during rotation of a wafer during a coating and spin drying process.

Cover plate for wind mark control in spin coating process

Embodiments of the invention provide a method for treating a microelectronic substrate with dilute TMAH. In the method, a microelectronic substrate is received into a process chamber, the microelectronic substrate having a layer, feature or structure of silicon. A treatment solution is applied to the microelectronic substrate to etch the silicon, where the treatment solution includes a dilution solution and TMAH. A controlled oxygen content is provided in the treatment solution or in an environment in the process chamber to achieve a target etch selectivity of the silicon, or a target etch uniformity across the layer, feature or structure of silicon, or both by the treatment solution.

Method of treating a microelectronic substrate using dilute TMAH

A method for controlling the temperature profile of phosphoric acid process over a wafer surface through the dynamic control of radial dispensing of sulfuric acid at a selected temperature, which includes providing a substrate with a layer formed thereupon; dispensing a first chemical and second chemicals onto the layer while adjusting at least one parameter of the second chemical dispense to vary the etch rate across a region of the substrate.

Method and apparatus for dynamic control of the temperature of a wet etch process

A chemical fluid processing apparatus and a chemical fluid processing method are described, to treat a substrate with a plurality of chemical fluids such that substantially constant temperature is maintained across a substrate surface. The apparatus includes a discharge nozzle above the substrate to supply a first chemical fluid at a first temperature to a front surface of the substrate, a bar nozzle oriented in a radial direction of the substrate to supply a second chemical fluid at a second temperature to the front surface or a back surface of the substrate, the second temperature being higher than the first temperature, and where the bar nozzle includes a plurality of outlets for discharging the second chemical fluid to a plurality of contacting places on the front surface or the back surface of the substrate at different distances from the center of the substrate.

Chemical fluid processing apparatus and chemical fluid processing method

An apparatus for dispensing a liquid onto a substrate may comprise a reservoir for storing the liquid to be dispensed; a filter comprising an inlet and an outlet, the filter inlet in fluidic communication with the reservoir via a first valve; a dosing pump comprising an inlet, a first outlet, and a second outlet, the dosing pump inlet in fluidic communication with the reservoir and the dosing pump second outlet in fluidic communication with the filter inlet via a second valve, the dosing pump configured to dose an amount of the liquid and pump the liquid; and a dispense nozzle in fluidic communication with the dosing pump first outlet, the dispense nozzle configured to dispense the liquid onto the substrate.

Method and apparatus for increased recirculation and filtration in a photoresist dispense system using a liquid empty reservoir

Provided are a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate in an etch treatment system, the etch treatment system configured for single substrate processing. The method comprises placing the substrate into the etch processing chamber, the substrate containing the masking layer and a layer of silicon or silicon oxide, obtaining a supply of steam water vapor mixture at elevated pressure, obtaining a supply of treatment liquid for selectively etching the masking layer over the silicon or silicon oxide at a selectivity ratio, combining the treatment liquid and the steam water vapor mixture, and injecting the combined treatment liquid and the steam water vapor mixture into the etch processing chamber. The flow of the combined treatment liquid and the steam water vapor mixture is controlled to maintain a target etch rate and a target etch selectivity ratio of the masking layer to the layer of silicon or silicon oxide.

Etch system and method for single substrate processing

Provided is a method for cleaning an ion implanted resist layer or a substrate after an ashing process. A duty cycle for turning on and turning off flows of a treatment liquid using two or more nozzles is generated. The substrate is exposed to the treatment liquid comprising a first treatment chemical, the first treatment chemical with a first film thickness, temperature, total flow rate, and first composition. A portion of a surface of the substrate is concurrently irradiated with UV light while controlling the selected plurality of cleaning operating variables in order to achieve the two or more cleaning objectives. The cleaning operating variables comprise two or more of the first temperature, first composition, first film thickness, UV wavelength, UV power, first process time, first rotation speed, duty cycle, and percentage of residue removal are optimized to achieve the two or more cleaning objectives.

Controlling cleaning of a layer on a substrate using nozzles

A method of process chemical temperature control for resist stripping of a substrate in a resist stripping system includes selecting at least two temperature control objectives and selecting at least two temperature control operating variables for optimization to achieve the at least two temperature control objectives. The method further includes injecting and mixing a first process chemical and a second process chemical into a treatment liquid delivery system of the resist stripping system, which forms a treatment liquid including an active species. The method further includes injecting vapor into the treatment liquid delivery system. The vapor is injected into the treatment liquid or the treatment liquid is injected into the vapor. Treatment liquid is dispensed from the dispensing device onto the substrate. At least two of the temperature control operating variables are adjusted in response to at least two metrology data values.

Method and system of process chemical temperature control using an injection nozzle

Provided is a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate in an etch treatment system, the etch treatment system configured for single substrate processing. The method comprises obtaining a supply of steam water vapor mixture at elevated pressure, obtaining a supply of treatment liquid for selectively etching the masking layer over the silicon or silicon oxide at a set etch selectivity ratio, placing the substrate into the etch processing chamber, combining the treatment liquid and the steam water vapor mixture, and injecting the combined treatment liquid and the steam water vapor mixture into the etch processing chamber, wherein the flow of the combined treatment liquid and the steam water vapor mixture is controlled to maintain a set etch rate and a set etch selectivity ratio of the masking layer to silicon or silicon oxide.

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Austin, TX, United States of America

Wallace Paul Printz