Micron Technology Incorporated

Wallace E Fister

Scott N Gatzemeier

Adam D Johnson

Ben Louie

Brent Keeth

Troy A Manning

Terry R Lee

Benjamin S Louie

Aaron M Schoenfeld

Kevin J Ryan

Chris G Martin

Thomas W Voshell

Kim M Pierce

Mike Pearson

Methods, memory devices and systems are disclosed. In one embodiment, a non-volatile memory device receives command signals through the same input/output terminals that receive address signals and write data signals and transmit read data signals. The input/output terminals are connected to a multiplexer, which is responsive to a received mode control signal to couple the input/output terminals to either a command bus or an input/output bus. A latch in the memory device latches the command signals when the mode control signal causes the input/output terminals to be coupled to the input/output bus. As a result, the command signals continue to be applied to the command bus. When the mode control signal causes the input/output terminals to be coupled to the input/output bus, write data signals are clocked into the memory device and read data signals are clocked out of the memory device responsive to a received clock signal.

System and method for reducing pin-count of memory devices, and memory device testers for same

A method and apparatus for programming programmable elements of a plurality of memory devices in parallel. Each of the memory devices include an address latch for latching an address corresponding to a programmable element to be programmed and logic circuitry for receiving address load commands. The logic circuitry provides control signals to the address latch in response to receiving the load commands to cause the address latch to latch an corresponding to a programmable element to be programmed. By using the address latch and logic circuitry, the programming of a programmable element of a first memory device and the programming the second programmable element of a second memory device can occur in parallel.

Apparatus and method for parallel programming of antifuses

A counter internal to a memory device for generating memory addresses in physical or logical sequence in non-redundant or redundant memory space, counting up or down in increments of the user's choice. The counter may be advantageously used to generate memory addresses for functional testing of the memory cells within the memory device.

Method for generating memory addresses for accessing memory-cell arrays in memory devices

Method for generating memory addresses for testing memory devices

A test circuit for functionally testing memory devices. The test circuit loads a plurality of data bits into the memory device under test. The test circuit subsequently reads the data bits stored in the memory cells, and detects if the logic level of the data bits read is the complement of the logic level written: The logic level is detected over a duration during which at least two data bits are read.

Method for testing memory devices

An on-chip test circuit in an integrated circuit includes a comparison circuit and a fail data register. An output of the comparison circuit is coupled to an input to the fail data register. The comparison circuit includes a first group of inputs coupled to outputs of a function circuit in the integrated circuit. The comparison circuit also includes a second group of inputs coupled to a source of expect data associated with normal function circuit performance. When a comparison between read data from the outputs of the function circuit and corresponding expect data indicates malfunction of the function circuit, data related to the malfunction are stored in the fail data register. A separate integrated circuit select line is coupled to each integrated circuit to allow transmission of the stored failure data without bus contention. As a result, many integrated circuits that are being tested may share an I/O bus, because the integrated circuits under test only output failure data on the I/O bus. Further, each integrated circuit only provides failure data to an external test data evaluation apparatus in response to selection signals from the external test data evaluation apparatus. The efficiency with which integrated circuits may be tested is thereby increased.

On-clip testing circuit and method for improving testing of integrated circuits

A test circuit for functionally testing memory devices. The test circuit loads a plurality of data bits into the memory device under test. The test circuit subsequently reads the data bits stored in the memory cells, and detects if the logic level of the data bits read is the complement of the logic level written. The logic level is detected over a duration during which at least two data bits are read.

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Meridian, ID, United States of America

Wallace E Fister