Samsung Display Co., Ltd.

Waljun Kim

Kiwan Ahn

Junghyun Kim

Yongjae Jang

Joosun Yoon

Yeonhong Kim

Jongyun Kim

Jaehyuk Jang

Jinwoo Lee

Sungeun Lee

Yugwang Jeong

Kwangyoung Choi

Jinyeong Kim

Taejin Kim

Wonjun Lee

Hyunbae Park

Kilyoung Lee

A display apparatus includes: a first pixel, a second pixel, and a third pixel respectively configured to emit different colors; a first partition wall on a first light-emitting device of the first pixel; and a first color conversion layer corresponding to an emission area of the first pixel. The first partition wall has a first opening corresponding to the first light-emitting device and a first concave portion spaced apart from the first opening in a plan view. The first color conversion layer includes first quantum dots configured to convert incident light into first color light.

Display apparatus including concave portion

An organic light-emitting display apparatus includes a pixel-defining layer configured to surround a plurality of pixels while exposing an emission area of the plurality of pixels on a substrate; and a spacer provided on the pixel-defining layer and configured to allow a mask to be placed on the spacer, the mask being arranged for deposition of an emission layer in the emission area, wherein a distance in a plane direction between the spacer and each of the plurality of pixels is within 1 &#x3bc;m. A color mixture between pixels may be prevented by suppressing the shadow phenomenon in deposition of an emission layer such that performance and reliability of the organic light-emitting display apparatus may be significantly improved.

Organic light-emitting display apparatus and method of manufacturing the same

A thin film transistor array substrate includes: a first conductive layer including first lines for transmitting data signals to the thin film transistors; a second conductive layer disposed on the first conductive layer and including second lines for supplying a driving voltage to the thin film transistors; a first insulating layer disposed between a semiconductor layer and the first conductive layer and including a first material layer; a second insulating layer disposed between the first conductive layer and the second conductive layer and including a second material layer having a dielectric constant greater than that of the first material layer; and a contact plug penetrating the second insulating layer and the first insulating layer, and connecting the second conductive layer to the semiconductor layer. A taper angle of the contact plug in the second material layer is greater than that of the contact plug in the first material layer.

Thin film transistor array substrate, display apparatus, and method of manufacturing thin film transistor array substrate

A semiconductor device including a semiconductor layer, a first electrode, and a second electrode. The semiconductor layer includes a first source region, a first drain region, a second source region, and a second drain region connected to a channel region. The first gate electrode is disposed below the semiconductor layer. The first gate electrode is insulated from the semiconductor layer. The first gate electrode at least partially overlaps the shared channel region. The second gate electrode is disposed above the semiconductor layer. The second gate electrode is insulated by a second gate insulating layer. The second gate electrode at least partially overlaps the channel region.

Semiconductor device and a display device including the same

A thin film transistor includes a substrate, a semiconductor layer, a first insulating layer, and a gate electrode. The gate electrode overlaps the semiconductor layer. The thin film transistor includes a second insulating layer on the gate electrode, and an electrode structure on the second insulating layer. The electrode structure is connected to the gate electrode through a via hole. The thin film transistor includes a source electrode and a drain electrode passing through the first insulating layer and the second insulating layer to be connected to the semiconductor layer. The semiconductor layer includes a channel area overlapping the gate electrode, a source area connected to the source electrode, a drain area connected to the drain electrode, a lightly doped source area, and a lightly doped drain area. The electrode structure overlaps at least one of the lightly doped source area or the lightly doped drain area.

Thin film transistor, manufacturing method thereof, and display device including the same

A method of manufacturing an organic light-emitting display apparatus using a light-blocking photoresist layer which minimizes damage to an intermediate layer, including an emission layer, during a process for manufacturing the organic light-emitting display apparatus.

Method of manufacturing organic light-emitting display apparatus and organic light-emitting display apparatus

Provided is a method of manufacturing a thin-film transistor substrate, the method includes forming a semiconductor pattern layer on a substrate. A first insulating film is formed on the semiconductor pattern layer. A metal pattern layer including a gate electrode and first and second alignment electrodes respectively spaced apart from two sides of the gate electrode is formed on the first insulating film. A cover layer covering the gate electrode is formed. The first and second alignment electrodes are removed. A first doping process is performed by doping the semiconductor pattern layer with a first impurity by using the cover layer as a mask. The cover layer is removed. A second doping process is performed by doping the semiconductor pattern layer with a second impurity having a lower impurity concentration than the first impurity by using the gate electrode as a mask.

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Yongin-si, South Korea

Waljun Kim