U.S. Philips Corporation

Waldemar Gotze

Holger K Luthje

Margret Harms

Angelika M Bruns

Ralf-Dieter Boehnke

A method is set forth of manufacturing a mask for radiation lithography having a mask support and a substrate, on which an absorber layer is provided to be structured according to a desired mask pattern. The absorber layer having a thickness preferably in the range of from 0.2 to 1.2 .mu.m of partly oxidized tungsten having an oxygen content in the range of from 21 to 29 at. % in the layer is deposited on the substrate, preferably by means of cathode sputtering.

Method of manufacturing a mask for radiation lithography

A mould and supporting dish for dry-compressed powder targets which are constructed so that adsorbed residual gases can readily escape during the evacuation process of the cathode sputtering device via substantially all the surfaces of the powder target, so that the powder target is not torn or its structure damaged during the evacuation process. The adsorbed residual gases can escape through apertures in the bottom and side wall of the supporting dish.

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Hamburg, Germany

Waldemar Gotze