Tokyo Ohka Kogyo Co., Ltd.

Waki Okubo

Kazuyuki Nitta

Satoshi Shimatani

Takeyoshi Mimura

Tatsuya Matsumi

Kazufumi Sato

Toshiyuki Ogata

The present invention provides a resist composition comprising (A) polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with an acid-dissociable dissolution inhibiting group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the acid-dissociable dissolution inhibiting group is eliminated by an action of an acid, and (B) a component capable of generating an acid by irradiation with radiation, wherein a retention rate of the acid-dissociable dissolution inhibiting group of the component (A) after a dissociation test using hydrochloric acid is 40% or less, and also provides a chemical amplification type positive resist composition which contains polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with a lower alkoxy-alkyl group having a straight-chain or branched alkoxy group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the lower alkoxy-alkyl group is eliminated by an action of an acid, in place of the component (A).

Chemical amplification type positive resist composition, resist laminated material, resist pattern forming method and method of manufacturing semiconductor device

Positive resist composition of chemical amplification type, resist coated material, method of forming resist pattern, and process for producing semiconductor device

A photosensitive laminate includes a substrate and a resist layer 500 to 5800 angstroms thick formed on the substrate. A composition for the resist layer includes (A) a compound which generates an acid upon irradiation with radioactive ray, (B) an alkali-soluble novolak resin, and (C) a compound having at least one acid-decomposable dissolution-inhibiting group, and the dissolution-inhibiting group is decomposable by action of an acid generated from the ingredient (A) to yield an organic carboxylic acid. This photosensitive laminate is sequentially subjected to selective exposure to KrF excimer laser light or to light having a short wavelength equal to or less than that of F laser, post-exposure baking, and developing with an alkali to yield a resist pattern.

Photosensitive laminate, process for forming resist pattern using same and positive resist composition

Growing community of inventors

Koza-gun, Japan

Waki Okubo