Nec Corporation

Nec Lcd Technologies, Ltd.

Wakahiko Kaneko

Osamu Sukegawa

Michiaki Sakamoto

Hiroaki Tanaka

Hirofumi Ihara

Hiroshi Kanou

Takasuke Hayase

Satoshi Ihida

Hirotaka Yamaguchi

Takahiko Watanabe

Seiichi Matsumoto

Tae Yoshikawa

Shinichi Nakata

Tae Miyahara

Hidenori Kusanagi

Takayasu Iida

Syoichi Kuroha

A liquid crystal display device includes first and second electrodes and an insulating film. The first electrode is formed on a substrate as one of two electrodes of an accumulation capacitor and applied with a voltage. The insulating film is formed on the first electrode to cover the first electrode. The second electrode is formed on the first electrode via the insulating film as the other electrode of the accumulation capacitor and including a first conductive film and a second conductive film formed on the first conductive film.

Liquid crystal display device with less pixel error and method of manufacturing the same

A semi-transmissive liquid crystal display device of the present invention is so configured that a diffraction film and a light scattering layer are provided on a color-filter substrate on the side thereof on which a display screen resides, and the light scattering layer is disposed nearer a liquid crystal layer than the diffraction film. The semi-transmissive liquid crystal display device thus configured has improved viewing-angle characteristics in the transmissive mode.

Semi-transmissive liquid crystal display device

An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode is isolated in each layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer and a TFF area. A drain electrode layer is formed by a first passivation film with the first passivation film formed as an upper layer. In a second passivation film, formed above the first passivation film, are bored a first opening through the first and second passivation films and a second opening through the second passivation film. A wiring connection layer is formed by ITO provided as an uppermost layer. A storage capacitance unit, including the first and second passivation films sandwiched between the gate electrode and an electrode layer formed as a co-layer with respect to the gate electrode, is connected to the pixel electrode.

Active matrix substrate and manufacturing method therefor

A method for fabricating an active matrix LCD panel for use in an active matrix LCD device includes the step of forming a passivation layer acting as a channel protection layer for protecting an amorphous silicon active layer, thereby reducing the number of photolithographic steps. A transparent conductive film is used for forming a gate electrode and a pixel electrode before formation of an amorphous silicon film for the TFTs.

Active matrix LCD panel

An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode isolated from one another from layer to layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer ( of FIG. ) and a TFF area. A drain electrode layer ( of FIG. ) is formed by a first passivation film ( of FIG. ) via a first passivation film ( of FIG. ) formed as an upper layer. In a second passivation film ( of FIG. ) formed above it are bored an opening through the first and second passivation films and an opening through the second passivation film. A wiring connection layer is formed by ITO ( of FIG. ) provided as an uppermost layer. A storage capacitance unit, comprised of the first and second passivation films sandwiched between the gate electrode and an electrode layer formed as a co-layer with respect to the gate electrode, is provided in the pixel electrode.

In a method for manufacturing an LCD device where a gate insulating layer is formed on an insulating substrate and a signal line pattern layer and a pixel electrode pattern layer are formed on a signal line forming area and a pixel electrode forming area, respectively, of the gate insulating layer, a part of the gate insulating layer between the signal line forming area and the pixel electrode forming area is etched.

Method for manufacturing LCD device capable of avoiding short circuit

In a liquid crystal display apparatus including a plurality of gate lines, a plurality of drain lines, and a plurality of pixels each including a liquid crystal cell having a pixel electrode connected to a storage capacitor and a switching element connected between the liquid crystal cell and one of the drain lines, a gate of the switching element is connected to one of the gate lines, and a capacitance of the storage capacitor is changed in accordance with a distance between said pixel and an input end of a corresponding one of the gate lines.

Liquid crystal display apparatus with uniform feed-through voltage in

In a method for manufacturing a thin film transistor, an upper portion of a channel region of an a--Si active layer is selectively etched using the source electrode and the drain electrode as a mask, so as to form a recess in the upper portion of the channel region of the active layer. Hydrogen plasma is irradiated to an exposed surface including a surface of the active layer, and succeedingly, an amorphous silicon film is deposited on the exposed surface including the surface of the active layer, and then patterned so as to form a light block film which also acts a protection layer.

Method for manufacturing a thin film transistor

A lower layer metal wiring is led out from a display portion to a terminal portion provided to the periphery of the glass substrate and covered at the upper surface with an interlayer insulation film. An upper layer metal wiring formed on the interlayer insulation film is connected to the lower layer metal wiring by way of contact holes formed in the interlayer insulation film. The upper layer metal wiring is completely covered by the transparent conductive film. A protective insulation film is formed on the transparent conductive film, and an opening is made in to the protective insulation film in the terminal portion. In the terminal portion, copper foil wirings of a flexible wiring substrate are connected by way of an anisotropic conductive film. The upper layer metal wiring is removed at a portion not protected by the protective insulation film or the anisotropic conductive film.

Growing community of inventors

Tokyo, Japan

Wakahiko Kaneko