Hitachi, Ltd.

Renesas Technology Corp.

Renesas Electronics Corporation

Hitachi Transport System, Ltd.

Wahei Kitamura

Gen Murakami

Kunihiko Nishi

Hiromichi Suzuki

Yoshihisa Matsubara

Seiji Kato

Kosho Akiyama

Hajime Sato

Masachika Masuda

Takahiro Naito

Susumu Okikawa

Tokuji Toida

Hiroshi Mikino

Daiji Sakamoto

Toshimasa Shirai

To prevent semiconductor chips from adhering to the trays during transport, a method is employed which transports semiconductor chips in the following state. When trays provided with a plurality of accommodating portions having a recessed cross section for accommodating semiconductor chips on a main surface thereof are stacked in a plurality of stages, the semiconductor chips are accommodated in spaces defined by the accommodating portions formed over the main surface of the lower-stage tray and corresponding accommodating portions formed over the back surface of the upper-stage tray. Here, on bottom surfaces of the accommodating portions formed over the back surface of the upper-stage tray, isolated projections having a height which prevents the projections from coming into contact with the semiconductor chips are arranged in a scattered manner. In this way, it is possible to prevent the semiconductor chips from adhering to the back surface of the upper-stage tray.

Method of manufacturing semiconductor device

Method of transporting semiconductor device and method of manufacturing semiconductor device

A method for carrying a semiconductor device includes: (a) providing semiconductor devices each having a main surface, a back surface, and a plurality of external terminals; (b) providing a tray having a front surface, a rear surface, an electronic tag imbedded in the tray, first concaved portions formed on the front surface, second concaved portions formed on the rear surface, the electronic tag constituted by a non-contact recognition type chip having a memory circuit in which recognizable information is stored, a depth of the first concaved portion is deeper than a depth of the second concaved portion; (c) housing the semiconductor devices into the first concaved portions respectively in such a manner that the back surface of the semiconductor device being oppose to a bottom of the first concaved portion; and (d) carrying the tray with the semiconductor devices.

Method for carrying a semiconductor device

In surface packaging of thin resin packages such as resin molded memory ICs or the like, cracks of the package occur frequently at a solder reflow step where thermal impact is applied to the package because the resin has absorbed moisture before packaging. To solve this problem, the devices are packaged moisture-tight at an assembly step of the resin molded devices where the resin is still dry, and are taken out from the bags immediately before the execution of surface packaging.

Surface package type semiconductor package and method of producing semiconductor memory

In surface packaging of thin resin packages such as surface mount resin molded memory ICs or the like, cracks of the package occur frequently at a solder reflow step where thermal impact is applied to the package because the resin has absorbed moisture before packaging. To solve this problem, the devices are sealed, by heat-sealing, in a bag moisture-tight at an assembly step of the resin molded devices where the resin is still dry, and are taken out from the bags immediately before the execution of surface packaging. The devices are packaged in a moisture-proofing bag made of a laminate film, and a desiccant is sealed, by heat-sealing the bag, in the moisture-proofing bag together with the, e.g., surface mount semiconductor device having a plastic package encapsulating the semiconductor device. A caution is provided for the bag, that the devices should be presented from moisture absorption after opening the bag.

In surface packaging of thin resin packages such as surface mount resin molded memory ICs or the like, cracks of the package occur frequently at a solder reflow step where thermal impact is applied to the package because the resin has absorbed moisture before packaging. To solve this problem, the devices are sealed, by heat-sealing, in a bag moisture-tight at an assembly step of the resin molded devices where the resin is still dry, and are taken out from the bags immediately before the execution of surface packaging. The devices are packaged in a moisture-proofing bag made of a laminate film, and a desiccant is sealed, by heat-sealing the bag, in the moisture-proofing bag together with the, e.g., surface mount semiconductor device having a plastic package encapsulating the semiconductor device.

In surface packaging of thin resin packages such as surface mount resin molded memory ICs or the like, cracks of the package occur frequently at a solder reflow step where thermal impact is applied to the package because the resin has absorbed moisture before packaging. To solve this problem, the devices are sealed in a bag moisture-tight at an assembly step of the resin molded devices where the resin is still dry, and are taken out from the bags immediately before the execution of surface packaging. The devices are packaged in a moisture-proofing bag made of a laminate film, and a desiccant is sealed in the moisture-proofing bag together with the, e.g., surface mount semiconductor device having a plastic package encapsulating the semiconductor device.

Resist pattern forming method using anti-reflective layer resist pattern

In surface packaging of thin resin packages such as surface mount resin molded memory ICs or the like, cracks of the package occur frequently at a solder reflow step where thermal impact is applied to the package because the resin has absorbed moisture before packaging. To solve this problem, the devices are packaged moisture-tight at an assembly step of the resin molded devices where the resin is still dry, and are taken out from the bags immediately before the execution of surface packaging.

Surface package type semiconductor package and method of producing

In surface packaging of thin resin packages such as resin molded memory ICs cracks of the package occur frequently at a solder reflow step where thermal impact is applied to the package because the resin has absorbed moisture before packaging. To solve this problem, the devices are packaged moisture-tight at an assembly step of the resin molded devices where the resin is still dry, and are taken out from the bags immediately before the execution of surface packaging.

Method of producing semiconductor memory

Method of producing surface package type semiconductor package

In surface packaging of thin resin packages such as resin molded memory ICs or the like, cracks of the package occur frequently at a solder reflow step where thermal impact is applied to the package because the resin has absorbed moisture before packaging. To solve this problem, the devices are packaged moisture-tight at an assembly step of the resin molded devices wherein the resin is still dry, and are taken out from the bags immediately before the execution of surface packaging.

Method of producing semiconductor memory packages

A process of producing a semiconductor device involving the steps of providing a lead frame having inner leads spaced from each other and connected together by a connecting portion; bonding a layer of an insulating material to the connecting portion and to surrounding portions of the inner leads; removing the connecting portion and a portion of the layer of insulating material to form end portions of the inner leads which are separated from each other and retained in a spaced arrangement by a remaning portion of the layer of insulating material; joining a semiconductor chip having bonding pads to the end portions of the inner leads; connecting the bonding pads on the semiconductor chip and the inner leads by wires; and encapsulating the semiconductor chip, the remaining portion of the layer of insulating material, the inner leads and the wires within a resin material; a peripheral portion of one face of the semiconductor chip partially overlapping faces of the end portions.

Process of producing semiconductor device

Surface package type semiconductor package

A semiconductor device in which a pellet and external leads are connected by bonding wires made of aluminum containing a predetermined amount of at least one additive element, the bonding wires containing 0.05 to 3.0 weight % of at least one element selected from the group consisting of iron and palladium, or containing 0.05-3.0 weight % of at least one first element selected from the group consisting of nickel, iron and palladium and 0.05-3.0 weight % of at least one second element selected from the group consisting of magnesium, manganese and silicon, whereby the corrosion resistance of the wire is increased and the breaking strength of the wire is enhanced. The bonding wires can be connected to the semiconductor pellet by a ball bond, and it is disclosed that using a ball having a Vickers hardness of 30-50 enables good bonding of the bonding wire to, e.g., an aluminum pad on the semiconductor pellet to be achieved. A ball having such hardness can be provided by using specific aluminum alloy compositions and by a quenching of the ball. The bonding wire has the shape and height of its loop controlled by annealing the bonding wire at a specified temperature before bonding or by employing a specified composition for the material of the bonding wire. The loop shape and bondability of the bonding wire, which can be made of aluminum or an aluminum composition containing, e.g., about 1.5 weight % of magnesium, are controlled into the best states.

Growing community of inventors

Kodaira, Japan

Wahei Kitamura