National Semiconductor Corporation

Waclaw C Koscielniak

Kulwant S Egan

Reda R Razouk

Wipawan Yindeepol

Jayasimha S Prasad

Philipp Lindorfer

A photonic crystal is formed on a semiconductor substrate using a semiconductor-based fabrication process by forming a number of alternating layers of material that have different dielectric constants. The layers of material are then etched to form a number of spaced-apart stacks of alternating layers of material. An interstack material is then formed between the stacks.

Photonic crystals using a semiconductor-based fabrication process

A double diffused MOS (DMOS) transistor structure is provided that uses a trench trough suitable for high-density integration with mixed signal analog and digital circuit applications. The DMOS device can be added to any advanced CMOS process-using shallow trench isolation by adding additional process steps for trench trough formation, a trench implant and a P-body implant. The trench trough and trench implant provide a novel method of forming a drain extension for a high-voltage DMOS device.

DMOS transistor structure with gate electrode trench for high density integration and method of fabricating the structure

A double diffused MOS (DMOS) transistor structure is provided that uses a trench trough suitable for high-density integration with mixed signal analog and digital circuit applications. The DMOS device can be added to any advanced CMOS process using shallow trench isolation by adding additional process steps for trench trough formation, a trench implant and a P-body implant. The trench trough and trench implant provide a novel method of forming a drain extension for a high-voltage DMOS device.

Method of forming photonic crystals using a semiconductor-based fabrication process

A vertical photodetector for detecting different wavelengths of light. The structure provides doped regions, which are separated by barrier regions. The doped regions detect photons corresponding to different wavelengths of light. Specifically, by detecting the amount of electrical charge collected by diodes positioned in the different doped regions, different wavelengths of light can be detected. The barrier regions inhibit the flow of electrical charges from one doped region into another doped region. The area of the doped regions can be increased, without increasing the capacitance of the diodes which are used to detect the electrical charges generated by light incident of the vertical photodetector.

Vertical photodetector with improved photocarrier separation and low capacitance

An improved method and an apparatus for forming a self-aligned epitaxial base bipolar transistor in a semiconductor material is disclosed. The method of the invention involves forming an intrinsic base region formed by growing an epitaxial semiconductor material over a collector region. A raised sacrificial emitter core is then formed on the intrinsic base region followed by depositing a substantially conformal spacer layer over the sacrificial emitter core. Next, the spacer material is anisotropically etched such that a protective spacer ring is formed about the sacrificial emitter core. An extrinsic base is then formed by implanting dopant into the epitaxial base region wherein the sacrificial emitter core and the spacer ring preserve an emitter region. The spacer ring also serves to self-align the extrinsic base region to the emitter region. The protective sacrificial emitter core and spacer ring are then removed. The self-aligned epitaxial base bipolar transistor is then formed by doping the emitter region.

Forming a self-aligned epitaxial base bipolar transistor

A trench which has walls intersecting a surface of a semiconductor substrate and an oxidation/diffusion barrier layer lining the walls is disclosed. The oxidation/diffusion barrier extends over the edges of the trench to prevent, for example, stress defects in the trench corners and vertical bird's beak formation within the trench. A filler material such as polysilicon is deposited within the trench followed by the deposition of a planarizing layer over the trench. After heat is applied, the planarizing layer flows to form a planarized layer over the trench. Using high pressure and phosphosilicate glass for the planarizing layer, the planarizing layer flows appropriately at low temperatures for short times.

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Santa Clara, CA, United States of America

Waclaw C Koscielniak