Novaled Gmbh

Samsung Sdi Co., Inc.

Vygintas Jankus

Carsten Rothe

Domagoj Pavicic

Jerome Ganier

Francois Cardinali

Uwe Gölfert

Benjamin Schulze

Steffen Willmann

Tomas Kalisz

Sung-Hyun Jung

Hun Rae Kim

Eun Sun Yu

Byungku Kim

Youngkwon Kim

Omrane Fadhel

Markus Hummert

Volodymyr Senkovskyy

Ulrich Heggemann

Julien Frey

Thomas Rosenow

Hyungsun Kim

Ulrich Denker

Regina Luschtinetz

Katja Gräf

Younhwan Kim

Vladimir Uvarov

Moo Jin Park

Annette Steudel

The present invention relates to an organic electroluminescent device comprising an anode, a cathode, an emission layer, an undoped electron transport layer comprising a first matrix compound, and an electron injection layer comprising a second matrix compound and an alkali organic complex and/or alkali halide, wherein the undoped electron transport layer and the electron injection layer are arranged between the emission layer and the cathode, wherein the reduction potential of the first matrix compound is less negative than, the reduction potential of 9,10-di(naphthalen-2-yl)anthracene and more negative than the reduction potential of 4,4'-bis(4,6-diphenyl-1,3,5-triazin-2-yl)biphenyl, wherein the reduction potential in both cases is measured against Fc/Fcin tetrahydrofurane; and the dipole moment of the first matrix compound is selected &#x2265;0 Debye and &#x2264;2.5 Debye and the dipole moment of the second matrix compound is selected &#x3e;2.5 and &#x3c;10 Debye.

Organic electroluminescent device

The present invention relates to an organic electroluminescent device, particularly to an organic light emitting diode (OLED) including an ETL stack of at least two electron transport layers, wherein the first electron transport layer comprises a first electron transport matrix compound and the second electron transport layer comprises second electron transport matrix compound and a redox n-dopant, and a device comprising the OLED.

Organic electroluminescent device comprising a redox-doped electron transport layer and an auxiliary electron transport layer

The present invention is directed to an electroluminescent device comprising: &#x2014;at least one node layer, &#x2014;at least one cathode layer, &#x2014;at least one light emitting layer, &#x2014;at least one first hole transport layer, &#x2014;at least a first electron transport layer; wherein for increasing power efficiency the compositions of the light emitting layer, the hole transport layer and the electron transport layer are matched to one another, wherein&#x2014;the at least one light emitting layer is arranged between the anode layer and the cathode layer, wherein the at least one light emitting layer comprises: &#x2014;at least one fluorescent emitter compound embedded in at least one polar emitter host compound, wherein&#x2014;the at least one polar emitter host compound has at least three aromatic rings, which are independently selected from carbocyclic rings and heterocyclic rings; &#x2014;the at least one first hole transport layer is arranged between the anode layer and the light emitting layer, wherein the at least one first hole transport layer comprises: &#x2014;at least one electrical p-dopant, or&#x2014;at least one electrical p-dopant and at least one first hole transport matrix compound; &#x2014;the at least one first electron transport layer is arranged between the cathode layer and the light emitting layer, wherein the first electron transport layer comprises: &#x2014;at least one redox n-dopant, and&#x2014;at least one first electron transport matrix compound.

Electroluminescent device comprising a defined layer arrangement comprising a light emitting layer, a hole transport layer and an electron transport layer

The present invention relates to an electronic device comprising at least one light emitting layer between an anode and a substantially silver cathode, the device further comprising between the cathode and the anode at least one mixed layer comprising (i) at least one substantially covalent electron transport matrix compound comprising at least one polar group selected from phosphine oxide group or diazole group, and (ii) in substantially elemental form, an electropositive element selected from substantially non-radioactive alkali metals, alkaline earth metals, rare earth metals, and transition metals of the fourth period of the Periodic table having proton numbers 22, 23, 24, 25, 26, 27, 28, 29.

Organic light emitting device comprising polar matrix, metal dopant and silver cathode

The present invention is directed to a semiconducting material comprising: i) a compound according to formula (I) wherein R, Rand Rare independently selected from C-C-alkyl, C-Ccycloalkyl, C-C-heteroalkyl, C-C-aryl, C-C-heteroaryl, C-C-alkoxy, C-C-cycloalkyloxy, C-Caryloxy, and from structural unit having general formula E-A-, wherein&#x2014;A is a C-Cphenylene spacer unit, and&#x2014;E is an electron transporting unit that is selected from C-Caryl and C-Cheteroaryl comprising up to 6 heteroatoms independently selected from O, S, P, Si and B and that comprises a conjugated system of at least 10 delocalized electrons, and&#x2014;at least one group selected from R, Rand Rhas the general formula E-A-; and ii) at least one complex of a monovalent metal having formula (II) wherein&#x2014;Mis a positive metal ion bearing a single elementary charge, and each of A, A, Aand Ais independently selected from H, substituted or unsubstituted C-Caryl and substituted or unsubstituted C-Cheteroaryl, wherein a heteroaryl ring of at least 5 ring-forming atoms of the substituted or unsubstituted C-Cheteroaryl comprises at least one hetero atom selected from O, S and N. 

Semiconducting material comprising a phosphine oxide matrix and metal salt

The present invention relates to an organic electroluminescent device comprising an hole injection layer and electron injection layer with zero-valent metal, and a method of manufacturing the same. In particular the present invention relates to an organic electroluminescent device comprising an anode layer, at least one electron transport layer, at least one electron injection layer, a cathode layer, and an emission layer, wherein the emission layer is arranged between the anode layer and the cathode layer, wherein the at least a first electron transport layer and the injection layer are arranged between the emission layer and the cathode layer, wherein the electron injection layer is arranged in direct contact to the first transport electron layer, wherein the first electron transport layer is arranged nearer to the anode layer and the electron injection layer is arranged nearer to the cathode layer, wherein at least the first electron transport layer comprises an organic phosphine matrix compound, and a first zero-valent alkali metal; and the electron injection layer comprises a second zero-valent metal of an alkaline earth metal and/or rare earth metal, and an alkali metal halide.

Organic electroluminescent device comprising a hole injection layer and electron injection layer with zero-valent metal

Process for preparing a metal containing layer, the process comprising (i) at least one step of co-vaporization, at a pressure which is lower than 10Pa, of a) at least one first metal selected from Li, Na, K, Rb and Cs and b) at least one second metal selected Mg, Zn, Hg, Cd and Te from a metal alloy provided in a first vaporization source which is heated to a temperature between 100&#xb0; C. and 600&#xb0; C., and (ii) at least one subsequent step of deposition of the first metal on a surface having a temperature which is below the temperature of the first vaporization source, wherein in step (i), the alloy is provided at least partly in form of a homogeneous phase comprising the first metal and the second metal, electronic devices comprising such materials and process for preparing the same.

Process for making a metal containing layer

The present invention relates to a semiconducting material comprising (i) a substantially covalent matrix material consisting of at least one substantially covalent matrix compound, (ii) at least one first metal selected from the group consisting of Li, Na, K, Rb, and Cs, and (iii) at least one second metal selected from the group consisting of Zn, Hg, Cd and Te, electronic devices comprising such materials and processes for preparing the same.

N-doped semiconducting material comprising two metal dopants

The present invention relates to a metallic layer adjacent to a semiconducting layer comprising a substantially covalent matrix material, the metallic layer comprising at least one first metal and at least one second metal, wherein a) the first metal is selected from the group consisting of Li, Na, K, Rb, Cs; and b) the second metal is selected from the group consisting of Zn, Hg, Cd, Te, electronic devices comprising such materials and process for preparing the same.

Metallic layer comprising alkali metal and second metal

The present invention relates to organic light-emitting diodes that include an anode electrode, a transparent cathode electrode, at least one emission layer and at least one organic semiconductor layer, wherein the at least one emission layer and the at least one organic semiconductor layer is arranged between the anode electrode and the transparent cathode electrode and the organic semiconductor layer includes a first zero-valent metal dopant and a first matrix compound wherein the first matrix comprising at least two phenanthrolinyl groups as well as to a method for manufacturing the same.

Organic light emitting diode comprising an organic semiconductor layer

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Dresden, Germany

Vygintas Jankus