Xilinx, Inc.

Vss Prasad Babu Akurathi

Hari Bilash Dubey

Sabarathnam Ekambaram

Milind Goel

Sasi Rama Subrahmanyam Lanka

Sasi Rama S Lanka

Xiaobao Wang

The Hot Carrier Injection effect is a phenomenon present in semiconductor devices, where charges are trapped in the gate oxide region and degrade the device. Hot carrier Injection (HCI) is one of the major problems in lower voltage technologies due to lower voltage tolerance limits of MOS devices. Due to this HCI effect, designing high voltage, wide range (i.e., supply voltage ranges: 3.3 v, 2.5 v, and 1.8 v) I/O buffers has become challenging. The HCI effect is common in input/output (I/O) buffers that use bias generation circuits for wide voltage ranges. Disclosed here are methods and systems employed to provide reliable bias generation in an I/O buffer or other semiconductor circuit. This limits the device drain to source voltage (Vds) in the bias circuits and I/O buffer so as to mitigate the hot carrier Injection (HCI) effect.

Method and system for mitigating hot carrier injection effect in a semiconductor circuit

An input/output (I/O) buffer is implemented without an auxiliary power supply (VCCAUX). The input/output (I/O) buffer includes a connection to a VCCO power supply, a connection to a VCCINT power supply, a connection to a reference voltage, and a VCCO detection circuit coupled to a bias generation circuit. Further, the I/O buffer includes a transmitter circuit coupled to the bias generation circuit, and a receiver circuit coupled to an I/O pad.

Method for implementing an I/O buffer

A circuit for implementing an input/output connection in an integrated circuit device is described. The circuit comprises a pull-up circuit comprising a first plurality of transistors coupled in series, wherein a gate of a first transistor of the first plurality of transistors is configured to receive a first dynamic bias signal; a pull-down circuit comprising a second plurality of transistors coupled in series, the pull-down circuit being coupled to the pull-up circuit at an output node, wherein a gate of a first transistor of the second plurality of transistors is configured to receive a second dynamic bias signal; and an input/output contact coupled to the output node. A circuit for implementing an input/output connection in an integrated circuit device including a splitter circuit for receiving an input signal on an input pad is also described. A method of implementing an input/output connection in an integrated circuit device is also described.

Circuit for and method of implementing IO connections in an integrated circuit device

An example receiver includes: a pad splitter circuit coupled to a pad, the pad splitter circuit configured to generate a first logic signal and a second logic signal; a wide-range receiver coupled to the pad splitter circuit to receive the first and second logic signals, the wide-range receiver comprising a combination of a first Schmitt trigger receiver and a second Schmitt trigger receiver; a control circuit coupled to the pad splitter circuit and the wide-range receiver; and a bias generator circuit coupled to the pad splitter circuit and the wide-range receiver.

Glitch-free wide supply range transceiver for integrated circuits

A pull-up leg of disclosed circuitry includes a pull-up pre-driver and a pull-up driver coupled to the pull-up pre-driver. A pull-down leg includes a pull-down pre-driver and a pull-down driver coupled to the pull-down pre-driver. An input/output pad is coupled between the pull-up driver and pull-down driver. A driver-and-termination control circuit is coupled to receive a tristate control signal, a termination control signal, and an input data signal. The driver-and-termination control circuit selects a drive mode, tristate mode, or termination mode in response to the tristate control signal and the termination control signal. The driver-and-termination control circuit drives a first data signal to the pull-up driver and drives a second data signal to the pull-down driver. The first and second data signals have equal logic states in the drive mode and have opposite logic states in the tristate and termination modes.

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Hyderabad Telangana, India

Vss Prasad Babu Akurathi