Northern Telecom Limited

Vsanta Chivukula

Ismail T Emesh

David Ross McDonald

A method is provided for forming a crystalline perovskite phase of a ferroelectric dielectric material by a process of depositing a layer of amorphous ferroelectric precursor material and then annealing in an oxygen containing atmosphere in the presence of water vapor, preferably with the addition of a few percent of ozone and at a temperature of less than 500.degree. C. Advantageously, the method provides for formation of a ferroelectric material comprising lead zirconate titanate, with low film stress, high dielectric constant and low leakage current. The reduced thermal budget allows for increase flexibility in integration of ferroelectric materials, e.g. after a step of deposition of low melting point metal or metal alloy.

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Nepean, Canada

Vsanta Chivukula