Texas Instruments Corporation

Vrashank Gurudatta Shukla

Mark Benjamin Welty

James Garrett Homack

Lifang Lou

John Eric Kunz

An electronic device includes a first-conductivity-type substrate and a second-conductivity-type epitaxial layer having a first dopant concentration. A first substrate region includes a second-conductivity-type buried layer and is enclosed by a first deep isolation structure. Within the first substrate region are a first doped region having the second conductivity type and a dopant concentration greater than the first dopant concentration and a second doped region having the first conductivity type. A second substrate region includes a first-conductivity-type buried layer and is enclosed by a second deep isolation structure. Within the second substrate region is a third doped region having the second conductivity type and a dopant concentration greater than the first dopant concentration.

Monolithic multi-channel diode array

An aspect of the present invention validates ESD compliance by examining netlist data generated from a schematic level design of an integrated circuit. Routing and placement may be performed only after confirming that whether each protected circuit (having exposure to ESD current, without the protection circuit) is protected by an appropriate protection circuit. As a result, the design cycle time may be reduced. According to another aspect of the present invention, layout guidelines for each protection circuit is also considered in performing the routing and placement. As a result, the number of iterations in a design cycle may be reduced.

Growing community of inventors

Plano, TX, United States of America

Vrashank Gurudatta Shukla