Taiwan Semiconductor Manufacturing Comp. Ltd.

Volume Chien

Chi-Cherng Jeng

Yun-Wei Cheng

Kuo-Cheng Lee

Yung-Lung Hsu

Hsin-Chi Chen

Shiu-Ko JangJian

Chun-Hao Chou

Chih-Mu Huang

Chiu-Jung Chen

Zen-Fong Huang

Tsung-Han Tsai

Zhe-Ju Liu

I-i Cheng

Chia-Yu Wei

Su-Hua Chang

Dun-Nian Yaung

Jen-Cheng Liu

Ying-Hao Chen

Fu-Tsun Tsai

Ying-Lang Wang

I-Chih Chen

Pin Chia Su

Chih-Kang Chao

Che-Min Lin

Keng-Ying Liao

Po-Zen Chen

Chung-Bin Tseng

Chen Hsin-Chi

Allen Tseng

Szu-Ying Chen

Jeng-Shyan Lin

Chun-Chieh Chuang

Fu-Cheng Chang

Chuan-Pu Liu

Kun-Huei Lin

Hung-Ta Huang

Yu-Hao Shih

Yi-Sheng Liu

Hsing-Lung Chen

Ching-Hung Kao

Feng-Chien Hsieh

Jung-Chi Jeng

Chia-Pin Cheng

Yen-Hsung Ho

Kuo-Hung Lee

Huan-En Lin

Hsi-Jung Wu

Huang-Ta Huang

Shih-Ciang Huang

Wang Chun-Ying

Yueh-Ching Chang

Yu-Heng Cheng

Szu-An Wu

Chyi-Shyuan Chern

Yi-Hsing Chu

Shang-Yen Wu

Shih-Ming Wang

Chia-Liang Chueh

Chen Chiu-Jung

I-l Cheng

Chao Chih-Kang

Yu Yuan Kuo

Ming-Te Mo

An image sensor includes a pixel array, a dielectric layer, a plurality of first conductive shielding regions, and a plurality of second conductive shielding regions. The pixel array includes photodiodes within a substrate. The dielectric layer is over the substrate. From a plan view, the first conductive shielding regions are adjacent four corners of the pixel array, and the second conductive shielding regions are adjacent four sides of the pixel array. The second conductive region has a length-to-width ratio greater than a length-to-width ratio of the first conductive region.

Backside illuminated image sensor device with shielding layer and forming method

A backside illuminated image sensor device with a shielding layer and a manufacturing method thereof are provided. In the backside illuminated image senor device, a patterned conductive shielding layer is formed on a dielectric layer on a backside surface of a semiconductor substrate and surrounding a pixel array on a front side surface of the semiconductor substrate.

Method of forming backside illuminated image sensor device with shielding layer

A photosensitive unit and a photo-insensitive unit are formed in a substrate. A lens is formed to cover the photosensitive unit and the photo-insensitive unit, and the lens has a single radius of curvature and an optical axis passing through a surface of the curvature at the center of the lens. The photosensitive unit is disposed at a first side of the optical axis and the photo-insensitive unit is disposed at a second side opposite to the first side of the optical axis, a light beam passing through the lens is simultaneously incident into the photosensitive unit and the photo-insensitive unit without being blocked, and the photosensitive unit detects the light beam while the photo-insensitive unit is ineffective in sensing the light beam. A conductive feature is formed over the substrate between the photosensitive unit and the photo-insensitive unit, wherein the optical axis of the lens passes the conductive feature.

Method of manufacturing integrated circuit device

Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.

Semiconductor image sensor device having back side illuminated image sensors with embedded color filters

Backside illuminated image sensor device with shielding layer

Integrated circuit devices are disclosed. The integrated circuit device includes a focus detection pixel and a lens. The focus detection pixel includes a photosensitive unit and a photo-insensitive unit in a substrate. The lens is disposed over the focus detection pixel, wherein the photosensitive unit and the photo-insensitive unit are disposed opposite to each other with respect to an optical axis of the lens, and a light beam passing through the lens is simultaneously incident into the photosensitive unit and the photo-insensitive unit.

Integrated circuit device

An image sensor device is provided. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a dielectric layer over the semiconductor substrate and a filter partially surrounded by the dielectric layer. The filter has a protruding portion protruding from a bottom surface of the dielectric layer. The image sensor device further includes a shielding layer between the dielectric layer and the semiconductor substrate and surrounding the protruding portion of the filter. In addition, the image sensor device includes a reflective element between the shielding layer and an edge of the light sensing region.

Mechanisms for forming image sensor device

Among other things, one or more support structures for integrated circuitry and techniques for forming such support structures are provided. A support structure comprises one or more trench structures, such as a first trench structure and a second trench structure formed around a periphery of integrated circuitry. In some embodiments, one or more trench structures are formed according to partial substrate etching, such that respective trench structures are formed into a region of a substrate. In some embodiments, one or more trench structures are formed according to discontinued substrate etching, such that respective trench structures comprise one or more trench portions separated by separation regions of the substrate. The support structure mitigates stress energy from reaching the integrated circuitry, and facilitates process-induced charge release from the integrated circuitry.

Support structure for integrated circuitry

An image sensor includes a substrate having a pixel region and a periphery region. The image sensor further includes a first isolation structure formed in the pixel region; the first isolation structure including a first trench having a first depth. The image sensor further includes a second isolation structure formed in the periphery region; the second isolation structure including a second trench having a second depth greater than the first depth. The pixel region includes only NMOS devices and the periphery region includes both NMOS and PMOS devices.

Image sensor including dual isolation and method of making the same

An image sensor device is provided. The image sensor device includes a semiconductor substrate including a front surface, a back surface opposite to the front surface, and a light-sensing region extending from the front surface into the semiconductor substrate. The image sensor device includes a light-blocking structure in the semiconductor substrate and surrounding the light-sensing region. The light-blocking structure includes a conductive light reflection structure and a light absorption structure, and the light absorption structure is between the conductive light reflection structure and the back surface. The image sensor device includes an insulating layer between the light-blocking structure and the semiconductor substrate.

Image sensor device

A semiconductor structure includes a substrate, a barrier layer disposed over the substrate, a grid disposed over the barrier layer, and a first color filter disposed over the barrier layer. The semiconductor structure also includes a second color filter disposed over the substrate and laterally surrounded by and contacting the grid. The semiconductor structure further includes a dielectric layer disposed between the barrier layer and the substrate. The barrier layer includes an upper surface overlapping the grid and the first color filter and a bottom surface substantially level with a bottom surface of the second color filter. The dielectric layer includes a first portion overlapping a bottom surface of the first color filter and a second portion overlapping a bottom surface of the second color filter, wherein non-visible light is allowed to pass from the second color filter to the substrate through the second portion of the dielectric layer.

Semiconductor image sensor structure for enhancing light reception and manufacturing method thereof

A bonding pad structure comprises an interconnect layer, an isolation layer over the interconnect layer, a conductive pad, and one or more non-conducting stress-releasing structures. The conductive pad comprises a planar portion over the isolation layer, and one or more bridging portions extending through at least the isolation layer and to the interconnect layer for establishing electric contact therewith, wherein there is a trench in the one or more bridging portions. The one or more non-conducting stress-releasing structures are disposed between the isolation layer and the conductive pad. The trench is surrounded by one of the one or more non-conducting stress-releasing structures from a top view.

Bonding pad on a back side illuminated image sensor

An image sensor device is provided. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a dielectric layer over the semiconductor substrate. The image sensor device further includes a filter partially surrounded by the dielectric layer. The filter has a protruding portion protruding from a bottom surface of the dielectric layer. In addition, the image sensor device includes a shielding layer between the dielectric layer and the semiconductor substrate and surrounding the protruding portion of the filter.

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Tainan, Taiwan

Volume Chien