Robert Bosch

Volkmar Senz

Thomas Friedrich

Peter Schmollngruber

Friedjof Heuck

Mike Schwarz

Heribert Weber

Hans Artmann

Arne Dannenberg

Christoph Hermes

Michael Krueger

Joerg Muchow

Helmut Grutzeck

Jochen Franz

Michael Frank

Jochen Tomaschko

Michael Badeja

Axel Rumberg

Helge Dittmer

Ferenc Lukacs

Christoph Schelling

Hubert Benzel

Simon Armbruster

Torsten Ohms

Gerhard Lammel

Robert Maul

Achim Breitling

Uwe Schiller

Guenther-Nino-Carlo Ullrich

Daniel Haug

Raschid Baraki

Hans-Peter Baer

Franziska Rohlfing

Christian Patak

Michaela Mitschke

Regina Grote

Sophielouise Mach

Sevki Gencol

Tamer Sinanoglu

Markus Lang

Tamas Dögei

Ronald Gampp

Mate Erdosi

A micromechanical component. The micromechanical component includes: a substrate; a frame structure which frames a partial surface of the substrate and/or an interlayer applied to the substrate, at least one electrode being mounted on the framed partial surface and/or interlayer; a pressure-sensitive membrane on which an external pressure acts and which brings about a deformation, wherein a self-supporting area of the membrane spans the framed partial surface and/or interlayer, the self-supporting area having at least one movable counterelectrode directed toward the framed partial surface and/or interlayer; and a sealed cavity having a reference pressure, surrounded by the membrane and the frame structure; wherein the self-supporting area of the membrane has local reinforcement structures for increasing a membrane thickness of the self-supporting area, the local reinforcement structures being mounted in particular regions of the self-supporting area where the membrane thickness of the self-supporting area changes.

Micromechanical component for a capacitive pressure sensor device, capacitive pressure sensor device, and a manufacturing method for a capacitive pressure sensor device

A MEMS element is provided. The MEMS element includes: a substrate; a first passivation layer arranged on the substrate; a metal layer arranged on the first passivation layer; a second passivation layer arranged on the metal layer and on the first passivation layer; and a punch element, an electrically conductive diffusion-blocking layer being arranged on the punch element and on the second passivation layer, a first bonding element being arranged on the punch element.

Bond structures on MEMS element and ASIC element

A method for producing a wafer connection between a first and a second wafer. The method includes providing a first and second material for forming a eutectic alloy, providing a first wafer having a receiving structure for a die structure, filling the receiving structure with the first material, providing a second wafer having a die structure, the second material being situated on the die structure, providing a stop structure on the first and/or second wafer, so that when the two wafers are joined, a defined stop is provided, heating the first and second material at least to the eutectic temperature of the eutectic alloy, joining the first and second wafer so that the die structure is at least partly introduced into the receiving structure, the stop structure, the receiving structure, the die structure.

Method for producing a wafer connection

A micromechanical component for a capacitive pressure sensor device, including a diaphragm that is stretched with the aid of a frame structure in such a way that a cantilevered area of the diaphragm spans a framed partial surface, and including a reinforcement structure that is formed at the cantilevered area. A first spatial direction oriented in parallel to the framed partial surface is definable in which the cantilevered area has a minimal extension, and a second spatial direction oriented in parallel to the framed partial surface and oriented perpendicularly with respect to the first spatial direction is definable in which the cantilevered area has a greater extension. The reinforcement structure is present at a first distance from the frame structure in the first spatial direction, and at a second distance in the second spatial direction, the second distance being greater than the first distance.

Micromechanical component for a capacitive pressure sensor device

A micromechanical component for a capacitive pressure sensor device includes a substrate; a frame structure that frames a partial surface; a membrane that is tensioned by the frame structure such that a self-supporting region of the membrane extends over the framed partial surface and an internal volume with a reference pressure therein is sealed in an airtight fashion, the self-supporting region of the membrane being deformable by a physical pressure on an external side of the self-supporting region that not equal to the reference pressure; a measurement electrode situated on the framed partial surface; and a reference measurement electrode that is situated on the framed partial surface and is electrically insulated from the measurement electrode.

A sensor device having a first counter electrode extending under an intermediate carrier, and having a first distance between the intermediate carrier and the first counter electrode being modifiable by the pressure on the movable region, and the first counter electrode encompassing, under the intermediate carrier, at least one electrically separated region that is disposed below a spacing element and includes at least a lateral extent of the spacing element.

MEMS capacitive sensor including improved contact separation

A micromechanical device that includes a carrier substrate; a sensor device that is situated on the carrier substrate and spaced apart from a surface section of the carrier substrate with the aid of spring elements in such a way that the sensor device is oscillatable relative to the surface section; and at least one stopper element, situated on the sensor device and/or on the surface section of the carrier substrate, which limits a deflection of the sensor device in the direction of the surface section.

Micromechanical device and method for manufacturing a micromechanical device

A micromechanical pressure sensor device is equipped with a sensor substrate including a front side and a rear side. The device includes a pressure sensor unit suspended in the sensor substrate, a first cavity above the pressure sensor unit, which is exposed toward the front side via one or multiple access openings, one or multiple stress relief trenches, which laterally enclose the pressure sensor unit and form a fluidic connection from the rear side to the first cavity, and a circuit substrate, on which the rear side of the sensor substrate is bonded. A second cavity, which is in fluidic connection with the stress relief trenches, is formed below the pressure sensor unit in the circuit substrate. At least one channel is provided in a periphery of the pressure sensor unit, which is in fluidic connection with the second cavity and is exposed to the outside.

Micromechanical pressure sensor device and corresponding manufacturing method

A method and an infrared measuring system for determining a temperature distribution of a surface without contact includes an infrared detector array with a detector array substrate and respective pluralities of measuring pixels and reference pixels. The measuring pixels are each connected to the detector array substrate with a first thermal conductivity, are sensitive to infrared radiation, and each provide a measurement signal for determining a temperature measurement value that depends on the intensity of the incident infrared radiation. The reference pixels are each connected to the detector array substrate with a second thermal conductivity and each provide a measurement signal for determining a temperature measurement value. The reference pixels are implemented as blind pixels that are substantially insensitive to infrared radiation. The temperature measurement values of the measuring pixels are corrected by a pixel-associated temperature drift component determined with reference to the temperature measurement values of the reference pixels.

Method for determining a temperature without contact, and infrared measuring system

A micromechanical pressure sensor, having&#x2014;a pressure sensor core including a sensor diaphragm and a cavity developed above the sensor diaphragm; and&#x2014;a pressure sensor frame; and&#x2014;a spring element for the mechanical connection of the pressure sensor core to the pressure sensor frame being developed in such a way that a mechanical robustness is maximized and a coupling of stress from the pressure sensor frame into the sensor pressure core is minimized.

Micromechanical pressure sensor

A method for contactlessly establishing a temperature of a surface includes determining the temperature measurement values of the plurality of blind pixels and determining temperature measurement values of the plurality of measurement pixels. The method further includes determining a temperature measurement value and a temperature measurement values by subtracting the temperature measurement value of the first blind pixel of the plurality of blind pixels from a temperature measurement value of a second blind pixel of the plurality of blind. The method further includes correcting the temperature measurement values by pixel-associated temperature drift components in each case, wherein the temperature drift components are determined using the temperature measurement value and/or the temperature measurement value.

A micromechanical system including a sensitive element, the system including a first area in which the sensitive element is situated, and a second area which at least partially surrounds the first area. Furthermore, the system includes a holding element having an elastic property, which joins the first area to the second area, and a joining material, with the aid of which the second area may be joined to a substrate. A spacing area is provided between the first area and the second area. The joining material extends into the spacing area so that a possible movement of the first area caused by the elastic property of the holding element is limited.

Micromechanical system including a sensitive element and associated manufacturing method

A thermal diode for a photosensor of a thermal imaging camera includes a semiconductor substrate having a surface and two doped structures set apart from each other on the surface. Furthermore, a device is provided for influencing a current between the first and the second structure, in order to reduce a current density in an area near to the surface and to increase it in an area far from the surface. In addition, a topology having an even absorption layer is proposed. The measures proposed have the aim of realizing a low-noise diode for thermal applications.

Infrared photosensor

Measures are described with the aid of which not only a rupture, but also cracks may be detected in the diaphragm structure of a micromechanical component with the aid of circuit means integrated into the diaphragm structure. At least some circuit elements are integrated for this purpose into the bottom side of the diaphragm, i.e., into a diaphragm area directly adjoining the cavern below the diaphragm.

Micromechanical component having a diaphragm

A magnetic sensor device having a first magnetic core structure which is aligned along a first central longitudinal axis and has at least one first coil, and having a second magnetic core structure which includes at least one second coil, the second magnetic core structure extending from a first end face of the second magnetic core structure along a second central longitudinal axis to a second end face of the second magnetic core structure, the second central longitudinal axis lying in a plane aligned in a direction normal to the first central longitudinal axis, and the second magnetic core structure being positioned in relation to the first magnetic core structure in such a way that a clearance between the first end face of the second magnetic core structure and a first center of mass of the first magnetic core structure is less than 20% of a maximum extension of the first magnetic core structure along the first central longitudinal axis.

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Volkmar Senz