Robert Boschgmbh

Samsung Sdi Co., Inc.

Volkmar Denner

Stefan Butzmann

Werner Herden

Manfred Vogel

Markus Klausner

Anton Mindl

Werner Poechmueller

Christian Pluntke

Neil A Davies

Peter Brauchle

Wolfgang Troelenberg

Christoph Thienel

William-Neil Fox

Martin Johannaber

An energy storage device for generating an n-phase supply voltage includes a plurality of energy supply branches that are connected in parallel, each of which is connected to an output connector of the energy storage device. Each of the energy supply branches includes a plurality of energy storage modules that are connected in series, each having at least one energy storage cell, and having a plurality of coupling modules connected to one of the plurality of energy storage modules, respectively, each configured to couple, or to bridge, the connected energy storage module with the energy supply branch. The energy storage device further includes a control system.

Energy storage device, system having an energy storage device, and method for operating an energy storage device

A method is provided for operating a vehicle, wherein during coasting of the vehicle, in order to reach a route position of a driving route that is still to be travelled, at a desired speed that is less than a vehicle speed at the start of coasting, a vehicle actual speed is compared with a vehicle target speed and an action is performed in dependence on the comparison. This renders possible a continuous adaptation of the driving resistance, so the desired speed is reliably reached. Interfering variables such as wind or gradient may be compensated for. A device is provided for operating a vehicle, and to a computer program.

Method and device for operating a vehicle

High-voltage semiconductor device

Monolithically integrated circuit

The invention relates to a method of determining the position of a p-n junction or the depth of penetration of the diffused electrode in the case of semiconductor devices produced by planar technology. According to the invention, a test pattern which comprises N pairs of windows, the spacing of which increases from pair to pair, is included in exposure. During the diffusion operation, the tubs produced overlap in the pairs of windows lying relatively close together, touch in one pair of windows (n.sub.o) and are separate from each other in pairs of windows lying relatively far apart. With the aid of a resistance measurement, the pair of windows (n.sub.o) in which the two tubs are still just touching is established, from which the lateral depth of penetration Y.sub.j is obtained as half the spacing of this pair of windows. From the lateral depth of penetration, the vertical depth of penetration X.sub.j can be established by means of the relationship X.sub.j =C.multidot.Y.sub.j. In developments of the method, there is also specified a correction possibility for the difference between layout dimension and etching dimension as well as a further possibility of establishing the exact value of the lateral depth of penetration Y.sub.jo. In the case of this possibility, the doping of the material which is diffused into can be determined.

Process for determining the position of a p-n transition

Growing community of inventors

Pfullingen, Germany

Volkmar Denner