Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

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Essilor International

Technologie-und Foerderzentrum

Volker Kirchhoff

Klaus Goedicke

Christoph Metzner

Uwe Vogel

Bernd Richter

Jörg Kubusch

Torsten Winkler

Jonathan Reschke

Philipp Wartenberg

André Weidauer

Siegfried Schiller

Nicolas Schiller

Bert Scheffel

Christiane Wetzel

Jessy Schönfelder

Goesta Mattausch

Gaby Gotzmann

Hendrik Walde

Fred Fietzke

Falk Milde

Gerhard Keller

Matthias Fahland

Henry Morgner

Olaf Roeder

Rainer Bartel

Richard Bosmans

Wolfgang Schwarz

Peter Frach

Manfred Neumann

Jens-Peter Heinss

Stephan Brenner

Gösta Mattausch

Frank-Holm Rögner

Wolfgang Hempel

Torsten Werner

Karsten Fehse

Rainer Labitzke

Henrik Flaske

Pascal Comble

Ralf Blüthner

Michael Jungh&auml;hnel

Uwe Gohs

Beatrice Beyer

Stefan Saager

Joerg Kubusch

Burkhard Zimmermann

Ignacio Gabriel Vicente Gabas

Gerhard Zeissig

Elisabeth Bodenstein

Andreas Fickert

J&ouml;m-Steffen Liebig

Matthias Schober

Susan Mühl

Peter Feinaeugle

Dieter Weiske

Rainer Zeibe

Edgar Remmele

Mario Metzner

Lars Klose

Peter FEINÄUGLE

Jörn-Steffen Liebig

Olaf RÖDER

Gösta Dr Mattausch

Ralf BLÜTHNER

Meyer Björn

Mattausch Gösta

Provided is a semi-transparent display and a method for producing a semi-transparent display. An SOI wafer is provided, the surface having at least one pixel region and at least one contact region arranged next to the pixel region, the SOI wafer comprising a silicon substrate on the rear side. At least one electromagnetic-radiation-emitting layer is deposited on the front side of the SOI wafer. At least one transparent cover layer is applied above the at least one electromagnetic-radiation-emitting layer. A wiring carrier is fastened to the assembly comprising the SOI wafer, the electromagnetic-radiation-emitting layer and the transparent cover layer. Before fastening of the wiring carrier to the assembly, the silicon substrate is removed from the assembly, producing a residual assembly, and electrically conductive connections are formed between the contact region of the SOI wafer and the wiring carrier from the rear side of the SOI wafer.

Semi-transparent display

A method may be provided for inactivating biologically active components in a liquid using low-energy electrons generated by an electron source, the electrons having an acceleration voltage of 25 keV to 300 keV. The method comprises the following steps: a) filling a vessel with a liquid volume; b) applying low-energy electrons to a first partial volume of the liquid filled into the vessel, wherein the first partial volume is a maximum of 10% of the liquid volume in the vessel; c) mixing the first partial volume of the liquid, applied with the low-energy electrons, to the second partial liquid volume in the vessel, which has not been applied with low-energy electrons; d) repeating steps b) and c) several times.

Method for inactivating biologically active components in a liquid

A method may be provided for stimulating the growth of a biomass, which is mixed with a liquid inside a bioreactor, by means of ionising radiation. The following method steps are used: a) exposing a first partial volume of the liquid in the bioreactor to ionising radiation, the first partial volume comprising at most 10% of the liquid volume in the bioreactor; b) mixing the first partial liquid volume, which has been exposed to ionising radiation, with the second partial liquid volume, which has not been exposed to ionising radiation, in the bioreactor; c) repeating method steps a) and b) multiple times, each partial volume of the liquid in the bioreactor being exposed to a total radiation dose of at most 50 Gy on statistical average.

Method for stimulating the growth of a biomass, contained in a liquid, inside a bioreactor

Apparatuses and methods are provided for applying accelerated electrons to a gaseous medium by means of an electron beam generator, which has at least one cathode for emitting electrons and at least one electron exit window, wherein a) the at least one cathode is annular and the at least one electron exit window is in the form of an annular first hollow cylinder, the annular electron exit window in the form of the first hollow cylinder forms an inner wall of an annular housing of the electron beam generator, wherein the electrons emitted by the cathode are accelerated to the ring axis of the annular housing; b) an annular second hollow cylinder is arranged within the electron exit window in the form of the first hollow cylinder and delimits an annular space between the first hollow cylinder and the second hollow cylinder; c) a cooling gas is fed through the annular space between the first hollow cylinder and the second hollow cylinder; and d) the gaseous medium to which accelerated electrons are to be applied is fed through the second hollow cylinder.

Apparatus and method for applying accelerated electrons to gaseous media

Method for the production of a semi-transparent display, and a semi-transparent display

A method for producing a component is provided, where the component comprises a substrate, which emits at least one electromagnetic radiation in a first wavelength range and an electromagnetic radiation in a second wavelength range within one surface area. Electrodes can be formed within the surface area of the substrate; a first layer stack can be deposited, comprising at least one layer, which causes the emission of the electromagnetic radiation in the first wavelength range, and a cover layer, acting as the first counterelectrode, on the entire surface area; the first layer stack can be removed from a first partial surface area, which comprises at least one electrode; a second layer stack can be deposited, comprising at least one layer, which causes the emission of the electromagnetic radiation in the second wavelength range, and a second cover layer, acting as the counterelectrode, on the entire surface area.

Method for producing a multi-colored light emitting component

Device for producing an electron beam includes a housing, which delimits a space that is evacuatable and has an electron beam outlet opening; an inlet structured and arranged for feeding process gas into the space; and a planar cathode and an anode, which are arranged in the space, and between which, a glow discharge plasma is producible by an applied electrical voltage. Ions are accelerateable from the glow discharge plasma onto a surface of the cathode and electrons emitted by the cathode are accelerateable into the glow discharge plasma. The cathode includes a first part made of a first material at least on an emission side, which forms a centrally arranged first surface region of the cathode, and a second part made of a second material, which forms a second surface region of the cathode that encloses the first surface region.

Device for producing an electron beam

The invention relates to a device and a method for altering the characteristics of a three-dimensional article by means of electrons, including at least one electron accelerator for generating accelerated electrons and two electron exit windows, wherein the two electron exit windows are arranged opposite one another, wherein the two electron exit windows and at least one reflector delimit a process chamber in which the surface or surface layer of the article are bombarded with electrons, wherein an energy density distribution inside the process chamber can be detected at least over one spatial dimension by means of a sensor system.

Device and method for altering the characteristics of three-dimensional shaped parts using electrons and use of said method

The invention relates to a covering material for biomass and a method for the production thereof, in which at least two components (A) and (B) are mixed and subsequently applied onto the biomass, wherein component (A) comprises an oil of animal or vegetable origin and an alginate and component (B) comprises an aqueous latex dispersion and/or a protein dissolved in water.

Covering material for biomass, and process for its preparation

An organic substrate having optically-active layers deposited by magnetron sputtering and a preparation process for it are provided. Gas pressure used for carrying out better adhesion by sputtering is high, comprised between 0.8 and 5.0 Pa. Sputtering is particularly suitable for targets of Si, Ti, Zr and organic substrates with or without anti-abrasive coating. Improved adhesion of thin films is obtained.

Organic substrate having optical layers deposited by magnetron sputtering and method for preparing it

Process for monitoring an alternating-voltage discharge between the electrodes of a double electrode and an apparatus. The process includes measuring values of at least one of a discharge current and a discharge voltage for each half-wave within an alternating-voltage discharge period, determining a difference between the measured values of a second half-wave and the measured values of the first half-wave, and comparing the determined differences to specific tolerance values. When the specific tolerance values are exceeded by the determined differences, a power supply is reduced, whereby the discharge is at least briefly suppressed. The apparatus includes a double magnetron including first and second targets arranged to form a double electrode, and a power supply coupled to supply power to the first and second targets. The power supply includes a measurement unit for measuring values of at least one of discharge current and discharge voltage, such that at least one of a discharge current and a discharge voltage for each half-wave within an alternating-voltage discharge period is measured. A device for determining a difference between the measured values of a second half-wave and the measured values of the first half-wave is provided, as well as a device for comparing the determined differences to specific tolerance values, and a device for at least briefly suppressing the discharge when the specific tolerance values are exceeded by the determined differences.

Method for monitoring alternating current discharge on a double electrode and apparatus

Magnetron discharges are pulse-operated to avoid the so-called &ldquo;arcing&rdquo;. In the case of magnetron discharges from alternating current-fed magnetrons, the process is limited to the minor power of the energy supply because of the load-carrying capacity of the required electric components. When the magnetron discharges are fed by direct current, their effectiveness deteriorates because of the deposition of layers on the anode surfaces. The new process should enable a high supply power and prevent arcing. In magnetron discharges with at least two magnetron electrodes, the energy is supplied in such a way that at least one magnetron electrode is a cathode or anode and a number n of direct current pulses of said polarity is supplied. The poles of at least one magnetron electrode are then reversed and a number n of direct currents of this polarity are supplied. The process is carried on in this manner, the frequency of the direct current pulses being higher than that of the polarity reversals. The energy supply effectiveness is thus improved. This process and system enable the production of layers having the most different properties, for example for the glass, packaging, electronic, and machine construction industries.

Process and system for operating magnetron discharges

Process and circuit for the bipolar pulse-shaped feeding of energy into

The invention relates to a process for stabilizing plasma generation in the coating of large substrate surfaces by means of an electron beam vaporizer. To obtain a stable operation of the apparatus at a high vaporization rate and stable plasma excitation of the vapour cloud without using additional electrodes, according to the invention the vaporization rate of the electron beam vaporizer is initially set so high that at least 10% of the electron beam power is absorbed in the vaporization chamber by the vapour and the optical emission of the resulting plasma is measured. The operating parameters of the electron gun or a process parameter are then controlled in such a way that the optical emission, and therefore the energy absorption, remains constant.

Process for the stabilization of plasma generation by means of electron

A method for the electron beam deposition of a multicomponent evaporant to ensure a consistent layer quality with constant composition and thickness in a defined manner. The X-radiation emitted from the evaporant on the point of electron beam impingement is measured in situ, using the obtained signal as reference input to control the parameters of the evaporation process and therefore to control the deposition rate and material composition of the deposited layer. The method is used for the production of corrosion resistant, high-temperature resistant, hard-wearing or optical layers on, for example, strip steel or plastic film.

Method for electron beam deposition of multicomponent evaporants

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Wehlen, Germany

Volker Kirchhoff