Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Opto Semiconductor Gmbh

Osram Ag

Osram Opto Semi-conductors Gmbh Co. Ohg

Volker Härle

Berthold Hahn

Dominik Eisert

Stefan Bader

Alfred Lell

Herbert Brunner

Michael Fehrer

Christoph Eichler

Georg Bogner

Uwe Strauss

Ulrich Zehnder

Matthias Sabathil

Stefan Grötsch

Günter Waitl

Johannes Baur

Stephan Kaiser

Hans-Jürgen Lugauer

Andreas Weimar

Andreas Plössl

Reiner Windisch

Andreas Ploessl

Norbert Stath

Karl Engl

Lutz Höppel

Matthias Peter

Norbert Linder

Franz Eberhard

Adrian Stefan Avramescu

Ewald Karl Michael Guenther

Gertrud Kräuter

Jürgen Off

Markus Richter

Johann Luft

Ernst Nirschl

Harald Jäger

Helmut Fischer

Kirstin Petersen

Johannes Völkl

Manfred Mundbrod-Vangerow

Raimund Oberschmid

Ulrich Jacob

Frank Kühn

Werner Plass

Frank Otte

Helmut Bolay

Hubert Ott

Christian Rumbolz

Georg Brüderl

Stephan Miller

Wilhelm Stein

Dieter Eissler

Zeljko Spika

Christine Höss

Marianne Ortmann

Andreas Weimer

Ferdinand Scholz

Andreas Leber

Reinhard Sedlmeier

Jörg Strauss

Heinz Clemens Schweizer

Andreas Hangleiter

Jacob Ulrich

Viorel Dumitru

Bertram Kuhn

Uwe Strauß

Christine Höß

Manfred Mundbrod

Frank KÜHN

A method for producing an optoelectronic component comprising the steps of providing a semiconductor layer sequence having at least one active region, wherein the active region is suitable for emitting electromagnetic radiation during operation, and applying at least one layer on a first surface of the semiconductor layer sequence by means of an ion assisted application method.

Method for producing an optoelectronic component, and an optoelectronic component

A method for producing structures () on a multiplicity of optoelectronic components (), wherein the multiplicity of optoelectronic components () are arranged on an auxiliary carrier () and the structures () are produced by carrying out a movement of a first roller () relative to the auxiliary carrier () and producing the structures () in the process by means of exerting a pressure between the first roller () and the auxiliary carrier ().

Method for producing structures in optoelectronic components and device for this purpose

An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (): a p doped barrier layer () for an active region (), the active region (), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer () for the active region (). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.

Optoelectronic semiconductor chip

A radiation-emitting body comprising a layer sequence having an active region for generating electromagnetic radiation, a coupling-out layer for coupling out the generated radiation, said coupling-out layer being arranged on a first side of the layer sequence, a reflection layer for reflecting the generated radiation, said reflection layer being arranged on a second side opposite the first side, and an interface of the layer sequence which faces the reflection layer and which has a lateral patterning having projecting structure elements, wherein the reflection layer is connected to the layer sequence in such a way that the reflection layer has a patterning corresponding to the patterning of the interface. A method for producing a radiation-emitting body is furthermore specified.

Radiation-emitting body and method for producing a radiation-emitting body

A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

Method for fabricating a semiconductor component based on GaN

For semiconductor chips using thin film technology, an active layer sequence is applied to a growth substrate, on which a reflective electrically conductive contact material layer is then formed. The active layer sequence is patterned to form active layer stacks, and reflective electrically conductive contact material layer is patterned to be located on each active layer stack. Then, a flexible, electrically conductive foil is applied to the contact material layers as an auxiliary carrier layer, and the growth substrate is removed.

Method for producing semiconductor chips using thin film technology

Presented is a method for fabricating a semiconductor substrate. The method includes implanting impurity material into the semiconductor substrate, and forming a reflective layer-like zone in the semiconductor substrate that includes the impurity material.

Method for fabricating semiconductor substrate for optoelectronic components

A radiation-emitting thin-film semiconductor chip with an epitaxial multilayer structure (), which contains an active, radiation-generating layer () and has a first main face () and a second main face ()&#x2014;remote from the first main face&#x2014;for coupling out the radiation generated in the active, radiation-generating layer. Furthermore, the first main face () of the multilayer structure () is coupled to a reflective layer or interface, and the region () of the multilayer structure that adjoins the second main face () of the multilayer structure is patterned one- or two-dimensionally with convex elevations ().

Radiation-emitting thin-film semiconductor chip

Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.

Method for producing a semiconductor element

In a luminescence diode chip having a radiation exit area () and a contact structure () which is arranged on the radiation exit area () and comprises a bonding pad () and a plurality of contact webs () which are provided for current expansion and are electrically conductively connected to the bonding pad (), the bonding pad () is arranged in an edge region of the radiation exit area (). The luminescence diode chip has reduced absorption of the emitted radiation () in the contact structure ().

Light-emitting diode chip comprising a contact structure

Method for producing a semiconductor component

A method for producing a semiconductor component, in which a semiconductor layer is separated from a substrate by irradiation with laser pulses, the pulse duration of the laser pulses being less than or equal to 10 ns. The laser pulses have a spatial beam profile with a flank slope is chosen to be gentle enough to prevent cracks in the semiconductor layer that arise as a result of thermally induced lateral stresses during the separation of semiconductor layer and substrate.

Method for separating a semiconductor layer from a substrate by irradiating with laser pulses

A thin-film LED comprising an active layer () made of a nitride compound semiconductor, which emits electromagnetic radiation () in a main radiation direction (). A current expansion layer () is disposed downstream of the active layer () in the main radiation direction () and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction () is coupled out through a main area (), and a first contact layer () is arranged on the main area (). The transverse conductivity of the current expansion layer () is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer () made of a second nitride compound semiconductor material in the current expansion layer ().

Thin film LED comprising a current-dispersing structure

Optoelectronic components with a semiconductor chip, which is suitable for emitting primary electromagnetic radiation, a basic package body, which has a recess for receiving the semiconductor chip and electrical leads for the external electrical connection of the semiconductor chip, and a chip encapsulating element, which encloses the semiconductor chip in the recess. The basic package body is at least partly optically transmissive at least for part of the primary radiation and an optical axis of the semiconductor chip runs through the basic package body. The basic package body comprises a luminescence conversion material, which is suitable for converting at least part of the primary radiation into secondary radiation with wavelengths that are at least partly changed in comparison with the primary radiation.

Optoelectronic component and package for an optoelectronic component

Growing community of inventors

Laaber, Germany

Volker Härle