Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Opto Semiconductor Gmbh

Volker Haerle

Berthold Hahn

Uwe Strauss

Karl Engl

Joachim Hertkorn

Johannes Baur

Tetsuya Taki

Dominik Eisert

Ulrich Zehnder

Manfred Mundbrod-Vangerow

Frank Kuehn

Alfred Lell

Christoph Eichler

Georg Bogner

Stefan Groetsch

Hans-Jürgen Lugauer

Adrian Stefan Avramescu

Stefan Bader

Norbert Stath

Hubert Ott

Kirstin Petersen

Georg Bruederl

A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate.

Composite substrate, semiconductor chip having a composite substrate and method for producing composite substrates and semiconductor chips

A method for producing an optoelectronic component is provided. A transfer layer, containing InGaN with 0&#x3c;x&#x3c;1, is grown onto a growth substrate. Subsequently, ions are implanted into the transfer layer to form a separation zone, a carrier substrate is applied, and the transfer layer is separated by way of heat treatment. A further transfer layer, containing InGaN with 0&#x3c;y&#x2266;1 and y&#x3e;x, is grown onto the previously grown transfer layer, ions are implanted into the further transfer layer to form a separation zone, a further carrier substrate is applied, and the further transfer layer is separated by way of heat treatment. Subsequently, a semiconductor layer sequence, containing an active layer, is grown onto the surface of the further transfer layer facing away from the further carrier substrate.

Method for producing an optoelectronic component

An optoelectronic component contains an epitaxial layer sequence based on a nitride compound semiconductor having an active layer and an epitaxial growth substrate comprising AlGa, where 0&#x3c;x&#x3c;0.95. In a method for producing an optoelectronic component an epitaxial growth substrate of Al(InGa)N or InGaN, where 0&#x3c;x&#x3c;0.99 and 0&#x2266;y&#x2266;1, is provided and an epitaxial layer sequence, which is based on a nitride compound semiconductor and contains an active layer, is grown thereon.

Optoelectronic component and method for producing an optoelectronic component

At least two semiconductor components emit electromagnetic radiation in different wavelength ranges. The superimposition of these electromagnetic radiations of all semiconductor components has at least one fraction in the visible wavelength range. At least one of the semiconductor components has a luminescence conversion element in the beam path.

Arrangement and method for generating mixed light

One embodiment of the invention proposes a light-emitting device comprising a radiation source for the emission of a radiation having at least a first wavelength, and an elongated, curved light-guiding body, into which the radiation emitted by the radiation source is coupled and which couples out light at an angle with respect to its longitudinal axis on account of the coupled-in radiation having the first wavelength.

Light-emitting device

The deposition of material () on a growth area () may be highly temperature-sensitive. In order to reduce temperature inhomogeneities on the growth area () of a substrate wafer (), a thermal radiation absorption layer () is applied on a rear side () of the substrate wafer () lying opposite to the growth area (). The thermal radiation absorption layer () exhibits good radiation absorption in the spectral range of a heating source. Since the deposition of semiconductor materials, in particular AllnGaN, may lead to (depending on the deposition temperature) different emission wavelengths of the deposited material, the use of a thermal radiation absorption layer () may produce a narrower emission wavelength distribution of the deposited material ().

Method for depositing a material on a substrate wafer

A method for producing a plurality of semiconductor chips, particularly radiation-emitting semiconductor chips, each having at least one epitaxially produced functional semiconductor layer stack, comprising the following method steps:

Method for the production of semi-conductor chips

A display device and method for its manufacture. In a display device with a first array of individual display elements and a second array of control transistors for the display elements, control transistors are formed from a semiconductor material with a large band gap and are transparent in the visible spectral range. The invention also comprises a method for manufacturing such a display device.

Display device and method of its manufacture

Radiation-emitting semiconductor device, method for fabricating same and radiation-emitting optical device. A radiation-emitting semiconductor device with a multilayer structure () comprising a radiation-emitting active layer (), with electrical contacts () for impressing a current in the multilayer structure () and with a radiotransparent window layer (). The window layer is arranged exclusively on the side of the multilayer structure () facing away from a main direction of radiation of the semiconductor device and has at least one side wall that includes a first side wall portion () which extends obliquely, concavely or in a stepwise manner toward a central axis of the semiconductor device lying perpendicular to the multilayer sequence. In its subsequent extension toward the back side, viewed from the multilayer structure, the side wall changes over into a second side wall portion () that extends perpendicularly to the multilayer structure, that is, parallel to the central axis, and the portion of the window layer () encompassing the second side wall portion () forms a mounting pedestal for the semiconductor device. The first and second side wall portions are fabricated especially preferably by means of a saw blade having a shaped edge. In a preferred optical device, the semiconductor device is mounted window layer downward in a reflector cup.

Radiation emitting semiconductor device

A radiation-emitting semiconductor device with a multilayer structure comprising a radiation-emitting active layer, with electrical contacts for impressing a current in the multilayer structure and with a radiotransparent window layer. The window layer is arranged exclusively on the side of the multilayer structure facing away from a main direction of radiation of the semiconductor device and has at least one side wall that includes a first side wall portion which extends obliquely, concavely or in a stepwise manner toward a central axis of the semiconductor device lying perpendicular to the multilayer sequence. In its subsequent extension toward the back side, viewed from the multilayer structure, the side wall changes over into a second side wall portion that extends perpendicularly to the multilayer structure, that is, parallel to the central axis, and the portion of the window layer encompassing the second side wall portion forms a mounting pedestal for the semiconductor device. The first and second side wall portions are fabricated especially preferably by means of a saw blade having a shaped edge. In a preferred optical device, the semiconductor device is mounted window layer downward in a reflector cup.

Growing community of inventors

Laaber, Germany

Volker Haerle