Infineon Technologies Ag

Volker Guengerich

Horst Theuss

Jochen Dangelmaier

Donald Fowlkes

Henrik Hoyer

A semiconductor device () has gold coatings (to) which are applied to metallic or ceramic components () of the semiconductor device (). The gold coatings (to) have a multifunctional multilayer metal coating () with a minimal gold layer (). The gold layer has a thickness dwhere d&#x2266;0.5 &#x3bc;m. Moreover, at least one metallic interlayer () is arranged between the gold layer () and the metallic or ceramic components ().

Semiconductor device with gold coatings, and process for producing it

A semiconductor device with micro connecting elements and method for producing the same disclosed. In one embodiment, the semiconductor device includes a number of micro connecting elements for the high-frequency coupling of components of the semiconductor device. The micro connecting elements have an at least three-layered structural form with a first layer of conducting material, a second layer of insulating material and a third layer of conducting material. In this configuration, the first and third layers and extend along a common center line and shield one another against electromagnetic interference fields. The first and third layers and are fixed on correspondingly adapted pairs of contact terminal areas of the components.

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Wuppertal, Germany

Volker Guengerich