Carl Zeiss Smt Gmbh

Volker Graeschus

Toralf Gruner

Wilhelm Ulrich

Norbert Wabra

Boris Bittner

Thomas Okon

Helmut Beierl

Christoph Zaczek

Olaf Conradi

Paul Gräupner

A projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern of a mask is provided. The method includes determining at least one light quiver parameter which describes a property of a light quiver, and controlling the operation of the projection exposure apparatus taking account of the light quiver parameter.

Projection exposure method and projection exposure apparatus for microlithography

A projection exposure system includes an illumination system configured to illuminate a mask with radiation. The projection exposure system also includes a projection objective configured to project an image of a pattern of the mask onto a radiation-sensitive substrate. The projection exposure system further includes an angle-selective filter arrangement arranged at or close to a field surface of the projection objective in a projection beam path optically downstream of the object surface. The angle-selective filter arrangement is effective to filter radiation incident on the filter arrangement according to an angle-selective filter function.

Projection exposure system and projection exposure method

A method for correcting at least one image defect of a projection objective of a lithography projection exposure machine, the projection objective comprising an optical arrangement composed of a plurality of lenses and at least one mirror, the at least one mirror having an optically operative surface that can be defective and is thus responsible for the at least one image defect, comprises the steps of: at least approximately determining a ratio VM of principal ray height hH to marginal ray height hR at the optically operative surface of the at least one mirror, at least approximately determining at least one optically operative lens surface among the lens surfaces of the lenses, at which the magnitude of a ratio VL of principal ray height hH to marginal ray height hR comes at least closest to the ratio VM, and selecting the at least one determined lens surface for the correction of the image defect.

Method for correcting a lithography projection objective, and such a projection objective

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Aalen, Germany

Volker Graeschus