Cabot Microelectronics Corporation

International Business Machines Corporation

Vlasta A Brusic

Ravi F Saraf

Judith Marie Roldan

Sampath Purushothaman

Marie Angelopoulos

Jane M Shaw

Alfred Viehbeck

Teresita Ordonez Graham

Christopher Thompson

Benjamin P Bayer

Kevin J Moeggenborg

Francesco De Rege Thesauro

Renjie Zhou

Paul M Feeney

Alejandro Gabriel Schrott

Jeffrey Dysard

Isaac K Cherian

Cyprian Emeka Uzoh

Daniel C Edelstein

Kenneth Parker Rodbell

Eugene John O'Sullivan

Lubomyr Taras Romankiw

Naftali Eliahu Lustig

Carlos Juan Sambucetti

Chris Chang Yu

Mark A Jaso

William L Guthrie

Frank Benjamin Kaufman

Robert O Lussow

Jeffrey R Marino

David W Sissenstein, Jr

Pankaj K Singh

Norman G Ainslie

Jeffrey Gilliland

Helen L Yeh

John Clark

Stanley Lesiak

Richard K Wilmer

Jason Keleher

Peter D Roper

Daniel W Chapman

Francesco M De Rege

Peter J Elmgren

Gerald S Frankel

Susan Wilson

Richard Jon Jenkins

Francesco DeRege Thesauro

David B Thompson

Tina A Petersen

Benjamin M Rush

Charles J Owen

The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises an oxidizing agent, calcium ion, an organic carboxylic acid, and water, wherein the polishing composition has a pH of about 1.5 to about 7. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.

Compositions for polishing aluminum/copper and titanium in damascene structures

The invention provides compositions and methods for planarizing or polishing a substrate. The composition comprises an abrasive consisting of alumina particles optionally treated with a polymer, an &#x3b1;-hydroxycarboxylic acid, an oxidizing agent that oxidizes at least one metal, polyacrylic acid, optionally, a calcium-containing compound, optionally, a biocide, optionally, a pH adjusting agent, and water. The method uses the composition to chemically-mechanically polish a substrate.

Method for polishing aluminum/copper and titanium in damascene structures

The present invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing copper- and/or silver-containing substrates. The compositions of the present invention comprise a particulate abrasive, a primary film-forming metal-complexing agent, and a secondary film-forming metal-passivating agent in an aqueous carrier. Methods of polishing a substrate with the compositions of the invention are also disclosed.

Metal-passivating CMP compositions and methods

The invention is directed to a method of polishing a surface of an object that includes aluminum. The method includes the step of contacting the surface of the object with a soft polishing pad and a polishing composition. The polishing composition includes abrasive particles, an agent that oxidizes aluminum, and a liquid carrier to polish the surface of the object. The polishing composition includes the abrasive particles suspended in the liquid carrier, and is applied at a pH above about 7.

Polishing slurry for aluminum and aluminum alloys

The invention provides methods of polishing a noble metal-containing substrate with one of two chemical-mechanical polishing compositions. The first chemical-mechanical polishing composition comprises (a) an abrasive comprising &#x3b1;-alumina, (b) about 0.05 to about 50 mmol/kg of ions of calcium, strontium, barium, or mixtures thereof, and (c) a liquid carrier comprising water. The second chemical-mechanical polishing composition comprises (a) an abrasive selected from the group consisting of &#x3b1;-alumina, &#x3b3;-alumina, &#x3b4;-alumina, &#x3b8;-alumina, diamond, boron carbide, silicon carbide, tungsten carbide, titanium nitride, and mixtures thereof, (b) about 0.05 to about 3.5 mmol/kg of ions of calcium, strontium, barium, magnesium, zinc, or mixtures thereof, and (c) a liquid carrier comprising water.

Chemical-mechanical polishing composition and method for using the same

The invention is directed to a method of polishing a surface of a substrate comprising aluminum, comprising contacting a surface of the substrate with a polishing pad and a polishing composition comprising an abrasive, an agent that oxidizes aluminum, and a liquid carrier, and abrading at least a portion of the surface to remove at least some aluminum from the substrate and to polish the surface of the substrate, wherein the abrasive is in particulate form and is suspended in the liquid carrier.

Use of CMP for aluminum mirror and solar cell fabrication

The invention relates to a method of polishing a substrate comprising at least one metal layer by applying an electrochemical potential between the substrate and at least one electrode in contact with a polishing composition comprising a reducing agent or an oxidizing agent.

Controlled electrochemical polishing method

The invention provides a cyanide-free chemical-mechanical polishing (CMP) composition useful for polishing a gold-containing surface of a substrate. The CMP composition comprises an abrasive, a gold-oxidizing agent, a cyanide-free gold-solubilizing agent, and an aqueous carrier therefor. The invention further provides a method of chemically-mechanically polishing a gold-containing surface of a substrate with the aforementioned polishing composition.

Gold CMP composition and method

The invention provides a method for polishing a substrate comprising a metal in an oxidized form, the method comprising the steps of: (a) providing a substrate comprising a metal in an oxidized form, (b) contacting a portion of the substrate with a chemical-mechanical polishing system comprising: (i) a polishing component, (ii) a reducing agent, and (iii) a liquid carrier, and (c) abrading at least a portion of the metal in an oxidized form to polish the substrate. The reducing agent can be selected from the group consisting of 3-hydroxy-4-pyrones, &#x3b1;-hydroxy-&#x3b3;-butyrolactones, ascorbic acid, borane, borohydrides, dialkylamine boranes, formaldehyde, formic acid, hydrogen, hydroquinones, hydroxylamine, hypophosphorous acid, phosphorous acid, a metal or metal ions in an oxidation state having a standard redox potential that is less than the standard redox potential of the metal in an oxidized form, trihydroxybenzenes, solvated electrons, sulfurous acid, salts thereof, and mixtures thereof.

Chemical-mechanical polishing of metals in an oxidized form

The invention provides a method of chemically-mechanically polishing a substrate. A substrate comprising ruthenium and copper is contacted with a chemical-mechanical polishing system comprising a polishing component, hydrogen peroxide, an organic acid, at least one heterocyclic compound comprising at least one nitrogen atom, and water. The polishing component is moved relative to the substrate, and at least a portion of the substrate is abraded to polish the substrate. The pH of the polishing system is about 6 to about 12, the ruthenium and copper are in electrical contact, and the difference between the open circuit potential of copper and the open circuit potential of ruthenium in the polishing system is about 50 mV or less.

CMP of copper/ruthenium substrates

The invention provides a method of polishing a substrate comprising (i) contacting a substrate comprising a noble metal layer with a chemical-mechanical polishing system comprising (a) a polishing component, (b) an oxidizing agent, and (c) a liquid carrier, and (ii) abrading at least a portion of the noble metal layer to polish the substrate. The polishing component is selected from the group consisting of an abrasive, a polishing pad, or a combination thereof, and the oxidizing agent is selected from the group consisting of bromates, bromites, hypobromites, chlorates, chlorites, hypochlorites, perchlorates, iodates, hypoiodites, periodates, peroxyacetic acid, organo-halo-oxy compounds, salts thereof, and combinations thereof. The chemical-mechanical polishing system has a pH of about 9 or less, and the oxidizing agent does not produce a substantial amount of elemental halogen. The invention also provides a method of polishing a substrate comprising a noble metal layer and a second layer using the aforementioned polishing system that further comprises a stopping compound.

CMP of noble metals

The invention provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising a noble metal, the polishing composition comprising (a) an oxidizing agent that oxidizes a noble metal, (b) an anion selected from the group consisting of sulfate, borate, nitrate, and phosphate, and (c) a liquid carrier. The invention further provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising ruthenium, the polishing composition comprising (a) an oxidizing agent that oxidizes ruthenium above the +4 oxidation state, (b) a polishing additive selected from the group consisting of metal sequestering polymers, metal chelators, organic thiols, compounds that reduce ruthenium tetraoxide, lactones, and &#x3b1;-hydroxycarbonyl compounds.

Polishing composition for noble metals

The invention provides a method of polishing a substrate comprising a noble metal comprising (i) contacting the substrate with a CMP system and (ii) abrading at least a portion of the substrate to polish the substrate. The CMP system comprises an abrasive and/or polishing pad, a liquid carrier, and a sulfonic acid compound.

CMP method for noble metals

The invention provides a chemical-mechanical polishing system and method comprising a liquid carrier, a polishing pad and/or an abrasive, and at least one amine-containing polymer, wherein the amine-containing polymer has about 5 or more sequential atoms separating the nitrogen atoms of the amino functional groups or is a block copolymer with at least one polymer block comprising one or more amine functional groups and at least one polymer block not comprising any amine functional groups.

CMP systems and methods utilizing amine-containing polymers

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Amawalk, NY, United States of America

Vlasta A Brusic