Memc Electronic Materials, Inc.

Vladimir Voronkov

Robert J Falster

Paolo Mutti

A process for growing a single crystal silicon ingot having an axially symmetric region substantially free of agglomerated intrinsic point defects. The ingot is grown generally in accordance with the Czochralski method; however, the manner by which the ingot is cooled from the temperature of solidification to a temperature which is in excess of about 900&deg; C. is controlled to allow for the diffusion of intrinsic point defects, such that agglomerated defects do not form in this axially symmetric region. Accordingly, the ratio v/G,is allowed to vary axially within this region, due to changes in v or G,, between a minimum and maximum value by at least 5%.

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Komissarov, Russia

Vladimir Voronkov