Asml Netherlands B.v.

Overseas Publishers Association

Overseas Publishers Association (Amsterdam) Bv

Vladimir Vitalevitch Ivanov

Erik Roelof Loopstra

Vadim Yevgenyevich Banine

Konstantin Nikolaevitch Koshelev

Vladimir Mihailovitch Krivtsun

Johannes Hubertus Josephina Moors

Maarten Marinus Johannes Wilhelmus Van Herpen

Arno Jan Bleeker

Derk Jan Wilfred Klunder

Alexander Matthijs Struycken

Givi Georgievitch Zukavishvili

Bastiaan Theodoor Wolschrijn

Josephus Jacobus Smits

Robert Rafilevitch Gayazov

Johannes Bernardus Ridder

Pavel P Kulik

Levinus Pieter Bakker

Carolus Ida Maria Antonius Spee

Klaas Timmer

Harm-Jan Voorma

Lambertus Adrianus Van Den Wildenberg

Evgenii Dmitreevitch Korob

Vladimir Mikhailovich Krivtsun

Konstantin Nikolaevich Koshelev

Johannes Henricus Wilhelmus Jacobs

Theodorus Petrus Maria Cadee

Frank Jeroen Pieter Schuurmans

Andrei Mikhailovich Yakunin

Wouter Anthon Soer

Dzmitry Labetski

Bastiaan Matthias Mertens

Johannes Christiaan Leonardus Franken

Arnoud Cornelis Wassink

Barrie Dudley Brewster

Denis Alexandrovich Glushkov

Johannes Maria Freriks

Robert Gordon Livesey

Yurii Victorovitch Sidelnikov

Paul Peter Anna Antonius Brom

Marc Hubertus Lorenz Van Der Velden

Evgeny Dmitrievich Korop

Oleg Yakushev

Abraham Veefkind

Dmitriy Victorovich Lopaev

Vecleslav Shvetchov

Alexis N Logoshin

John A Gay

Lambertus Adrianus Wildenberg

Eugenia N Zornia

George Pavlov

Alim Tchabanov

Alexis Logoshin

Eugene Zorina

Vladimir Mihailovitch Krivtsum

Aleksander Sergeevich Kovalev

Vladimir Mihailovitc Krivtsun

Sergey Churilov

A collector assembly with a radiation collector, a cover plate and a support member connecting the radiation collector to the cover plate are provided. The cover plate is designed to cover an opening in a collector chamber. The collector chamber opening may be large enough to pass the radiation collector and the support member. The removed radiation collector can be cleaned with different cleaning procedures, which may be performed in a cleaning device. Such cleaning device may for example consist of the following: a circumferential hull designed to provide an enclosure volume for circumferentially enclosing at least the radiation collector; an inlet configured to provide at least one of a cleaning gas and a cleaning liquid to the enclosure volume to clean at least said radiation collector; and an outlet configured to remove said at least one of said cleaning gas and said cleaning liquid from the enclosure volume.

Ex-situ removal of deposition on an optical element

A patterned beam of radiation is projected onto a substrate. A reflective optical element is used to help form the radiation beam from radiation emitted from a plasma region of a plasma source. In the plasma source, a plasma current is generated in the plasma region. To reduce damage to the reflective optical element, a magnetic field is applied in the plasma region with at least a component directed along a direction of the plasma current. This axial magnetic field helps limit the collapse of the Z-pinch region of the plasma. By limiting the collapse, the number of fast ions emitted may be reduced.

Plasma radiation source, method of forming plasma radiation, apparatus for projecting a pattern from a patterning device onto a substrate and device manufacturing method

A foil trap is located in a path of a radiation beam. The foil trap includes an array of conductive strips. A voltage application circuit is coupled to the strips to apply voltage differences between pairs of adjacent ones of the strips. The voltage application circuit includes a current limiting circuit arranged to limit currents to the strips to values below a threshold value above which self-sustained arc discharge may arise in the foil trap.

Lithographic apparatus, radiation system and device manufacturing method

A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.

Radical cleaning arrangement for a lithographic apparatus

A radiation system for generating a beam of radiation that defines an optical axis is provided. The radiation system includes a plasma produced discharge source for generating EUV radiation. The discharge source includes a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system for producing a plasma between the pair of electrodes so as to provide a discharge in the plasma between the electrodes. The radiation system also includes a debris catching shield for catching debris from the electrodes. The debris catching shield is constructed and arranged to shield the electrodes from a line of sight provided in a predetermined spherical angle relative the optical axis, and to provide an aperture to a central area between the electrodes in the line of sight.

Radiation system and lithographic apparatus

The invention relates to a radiation system for generating electromagnetic radiation. The radiation system includes a pair of electrodes constructed and arranged to generate plasma of a first substance and a pinch in the plasma. The radiation system also includes a plasma recombination surface that is arranged proximate to the pinch, and is configured to neutralize a plurality of plasma particles.

A lithographic apparatus is configured to project a pattern from a patterning device onto a substrate. The apparatus includes a gas purged sealing aperture extending between at least two different zones of the apparatus, and a gas supplier configured to supply the sealing aperture one or more gases selected from a group including hydrogen, deuterium, heavy hydrogen, deuterated hydrogen, and a mixture of argon and hydrogen.

Lithographic device, device manufacturing method and device manufactured thereby

An apparatus for producing radiation by an electrically operated discharge has a first electrode, a second electrode. and a capacitor bank. The electrodes are configured at a distance from each other which allows plasma ignition. The capacitor bank is electrically connected at a first terminal to the first electrode and at a second terminal to the second electrode, and configured to store a discharge energy. The electrodes and the capacitor bank form an electric circuit. At least the first electrode is formed by an electrically conducting fluid supplied via a first feeding line. The apparatus further has a charger and a first high inductance unit. The charger is connected to at least one of the terminals. The first high inductance unit is provided upstream the first terminal in the first feeding line for electrically decoupling the electric circuit.

Radiation generating device, lithographic apparatus, device manufacturing method and device manufactured thereby

A radiation source is disclosed that includes an anode and a cathode that are configured and arranged to create a discharge in a substance in a discharge space between the anode and the cathode and to form a plasma so as to generate electromagnetic radiation, the anode and the cathode being rotatably mounted around an axis of rotation, the cathode being arranged to hold a liquid metal. The radiation source further includes an activation source arranged to direct an energy beam onto the liquid metal so as to vaporize part of the liquid metal and a liquid metal provider arranged to supply additional liquid metal so as to compensate for the vaporized part of the liquid metal.

Plasma radiation source for a lithographic apparatus

A cleaning arrangement for a lithographic apparatus module may be provided in a collector. The cleaning arrangement includes a hydrogen radical source configured to provide a hydrogen radical containing gas to at least part of the module and a pump configured to pump gas through the module such that a flow speed of the hydrogen radical containing gas provided through at least part of the module is at least 1 m/s. The cleaning arrangement may also include a gas shutter configured to modulate a flow of the hydrogen radical containing gas to at least part of the module, a buffer volume of at least 1 min communication with the module, and a pump configured to provide a gas pressure in the buffer volume between 0.001 mbar (0.1 Pa) and 1 mbar (100 Pa). The cleaning arrangement may further include a gas return system.

Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement

A radiation source generates short-wavelength radiation, such as extreme ultraviolet radiation, for use in lithography. Rotating electrodes are provided which dip into respective baths of liquid metal, for example, tin. An electrical discharge is produced between the electrodes to generate the radiation. Holes are provided in the electrodes and/or in a metal shielding plate around the electrodes to enable better pumping down to low pressure in the vicinity of the discharge to improve the conversion efficiency of the source. The holes in the electrodes improve cooling of the electrodes by causing stirring of the liquid metal, and by improving the thermal and electrical contact between the electrodes and the liquid metal. Improved electrical contact also reduces the time-constant of the discharge circuit, thereby further improving the conversion efficiency of the source.

Radiation source

A cleaning arrangement for a lithographic apparatus module may be provided in a collector. The cleaning arrangement includes a hydrogen radical source configured to provide a hydrogen radical containing gas to at least part of the module and a pump configured to pump gas through the module such that a flow speed of the hydrogen radical containing gas provided through at least part of the module is at least 1 m/s. The cleaning arrangement may also include a gas shutter configured to modulate a flow of the hydrogen radical containing gas to at least part of the module, a buffer volume of at least 1 min communication with the module, and a pump configured to provide a gas pressure in the buffer volume between 0.001 mbar (0.1 Pa) and 1 mbar (100 Pa).

Growing community of inventors

Moscow, Russia

Vladimir Vitalevitch Ivanov