Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Vladimir Urazaev

Jin-Ha Jeong

Jae-hyoung Choi

Ki-Yeon Park

Jin Ha Jeong

Sangmin Lee

Jaehun Seo

Jongchul Park

Sechung Oh

Sung-wook Kang

Byung-Duk Yang

Gwang-Hyun Baek

Hyungjoon Kwon

Ken Tokashiki

Hansoo Kim

Yong-Hoon Son

Jung-ho Kim

Bong Su Son

Jin Hyeock Choi

Jong-Hyuk Kang

Jung Soo Lim

Jin-Soo Lim

Young Shik Shin

Sung-Woo Hyun

Yongsang Jeong

Hea-Yun Lee

Changhun Lee

Heayun Lee

Provided are semiconductor devices and methods of fabricating the same. The semiconductor device may include lower wires, upper wires crossing the lower wires, select elements provided at intersections between the lower and upper wires, and memory elements provided between the select elements and the upper wires. Each of the memory elements may include a lower electrode having a top width greater than a bottom width, and a data storage layer including a plurality of magnetic layers stacked on a top surface of the lower electrode and having a rounded edge.

Semiconductor devices and methods of fabricating the same

Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.

A light blocking member having variable transmittance, a display panel including the same, and a manufacturing method thereof. A light blocking member having a variable transmittance according to one exemplary embodiment includes a polymerizable compound, a binder, and a thermochromic material that exhibits a black color at a temperature below a threshold temperature and becomes transparent at a temperature above the threshold temperature.

Light blocking member having variable transmittance, display panel including the same, and manufacturing method thereof

A method of fabricating a semiconductor device may include patterning a substrate to form trenches, forming a sacrificial layer to cover inner surfaces of the trenches, the sacrificial layer having a single-layered structure, forming sacrificial patterns by isotropically etching the sacrificial layer such that the sacrificial layer remains on bottom surfaces of the trenches, forming lightly doped regions in sidewalls of the trenches using the sacrificial patterns as an ion mask, removing the sacrificial patterns, and sequentially forming a gate insulating layer and a gate electrode layer in the trenches.

Semiconductor device including metal-oxide-semiconductor field effect transistors and methods of fabricating the same

A three dimensional semiconductor memory device includes an electrode structure having a plurality of conductive electrode patterns and insulating patterns alternatingly stacked on a substrate. Opposite sidewalls of the electrode structure include respective grooves therein extending in a direction substantially perpendicular to the substrate. First and second active patterns protrude from the substrate and extend within the grooves in the opposite sidewalls of the electrode structure, respectively. Respective data storing layers extend in the grooves between the conductive electrode patterns of the electrode structure and sidewalls of the first and second active patterns adjacent thereto. Related fabrication methods are also discussed.

Three dimensional semiconductor memory devices and methods of fabricating the same

Exposure systems include a beam generator, which is configured to irradiate source beams in a direction of an object to be exposed by the source beams, along with first and second beam shapers. The first beam shaper, which is disposed proximate the beam generator, has a first aperture therein positioned to pass through the source beams received from the beam generator. The second beam shaper is disposed proximate the first beam shaper. The second beam shaper includes a plate having a second aperture therein, which is positioned to receive the source beams that are passed through the first aperture of the first beam shaper. The second beam shaper further includes a first actuator and a first shift screen mechanically coupled to the first actuator.

Exposure systems for integrated circuit fabrication

Light blocking member having variabe transmittance, display panel including the same, and manufacturing method thereof

A method of fabricating a vertical NAND semiconductor device can include changing a phase of a first preliminary semiconductor layer in an opening from solid to liquid to form a first single crystalline semiconductor layer in the opening and then forming a second preliminary semiconductor layer on the first single crystalline semiconductor layer. The phase of the second preliminary semiconductor layer is changed from solid to liquid to form a second single crystalline semiconductor layer that combines with the first single crystalline semiconductor layers to form a single crystalline semiconductor layer in the opening.

Methods of fabricating vertical semiconductor device utilizing phase changes in semiconductor materials

A refrigerator and a method to control the same are provided. The refrigerator includes a body having a supercooling compartment, a cooling unit to provide cool air to the supercooling compartment, an electromagnetic radiation sensor to detect electromagnetic radiation emitted when a food placed in the supercooling compartment begins to freeze, an energy supply to apply energy to the food placed in the supercooling compartment to prevent freezing of the food, and a controller to receive a detection signal from the electromagnetic radiation and then to activate the energy supply. Electromagnetic radiation emitted from each beverage in a supercooled state when the beverage begins to freeze is detected and energy is applied to the beverage according to the detection.

Refrigerator and method to control the same

Growing community of inventors

Suwon-si, South Korea

Vladimir Urazaev