Tlc Precision Wafer Technology, Inc.

Honeywell G.m.b.h.

Other

Vladimir Sokolov

John J Geddes

James B Beyer

Philip Cheung

Stephanie M Carlson

Robert M Dwarkin

Athanase Contolatis

David C Engelhardt

A high frequency signal source module includes a housing have a high-Q dielectric puck and a transition enclosure employing an antipodal finline transition. A circuit module connected to the high-Q puck includes an oscillator circuit that cooperates with the high-Q puck, and a frequency doubling circuit. In turn, the output of the frequency doubler is coupled to the antipodal finline transition, and thence to the output standard rectangular waveguide.

Millimeter wave low phase noise signal source module

A phase modulator for communication applications is constructed in so as to be easily implemented by way of MMIC technology. A phase modulator section is followed by a saturated amplifier section so as to provide substantially constant amplitude for all bits or states. The phase modulator section is a bi-phase shift keyed or quadrature-phase shift keyed modulator constructed in accordance with the present invention for discretely varying the phase of an input carrier signal between two or four possible phase states, respectively. The bi-phase shift keyed modulator includes at least a first pair of first and second transmission line segments and a pair of switches which each serve as a single-pole double-throw switch for operatively connecting one of the pair of transmission line segments between an input associated with the first switch, and an output associated with the second switch. The length of the transmission line segment of each of the first and second line segments differs by a first selected difference value determined at a desired operating carrier signal. A control means is provided to control the gate voltages of each of the field effect transistors of each of the switches so as to provide Bi-phase switching of the carrier signal. The quadrature-phase shift keyed modulator is accomplished by adding, in tandem, a second switch selectable pair of transmission line segments to the first pair constituting the bi-phase shift keyed modulator. The post amplifier section employs an amplifier driven into saturation so as to ensure minimal amplitude variation in the output signal whole while maintaining a substantially constant selected phase state.

Quadrature phase shift keyed/bi-phase shift keyed modulator

A multifunction high frequency integrated circuit structure and circuit configuration includes a resonator or oscillator circuit coupled to a buffer amplifier by way of a stripline coupler. The resonator circuit includes an input terminating region which is coupled to three input terminating ports. A first one of the input terminating ports is coupled directly to the resonator for either being electrically connected to a selected signal source or load, a second one of the input terminating ports is electrically connected to either a fixed or variable potential source, and the remaining input terminating port is coupled to the resonator input terminating region through another stripline coupler, and is intended to be electrically connected to another selected signal source. Depending upon the choice of circuit components and signal sources connected to the input terminating ports, the multifunction high frequency integrated circuit may serve as a voltage controlled oscillator, low phase noise oscillator, direct up/down frequency signal converter, or injection locked oscillator.

Multifunction high frequency integrated circuit structure

An analog phase modulator is provided for linearly phase modulating a high carrier frequency input signal in proportion to an applied bias signal. A first variable reactance network, including at least a pair of variable reactance devices separated by an approximately 1/4 wave length transmission line segment, is capacitively coupled to an in-phase port of a power divider network, and a second identical variable reactance network is capacitively coupled to a quadrature phase shifted port of the power divider network. A bias source signal is applied to each of the first and second variable reactance networks through identical bias filters, each including a high impedance transmission line segment serially connected between the bias source and the variable reactance network, and a low impedance transmission line segment shunt segment at the juncture of the high impedance transmission line segment and the bias source input port.

Phase angle modulator for microwaves

A non-destructive and non-invasive method for monitoring a selected characteristic of a fabricated semiconductor sample while inside a fabrication chamber and during the fabrication process, where selected materials are deposited on a planar surface of a wafer substrate in a fabrication chamber, employs one or more viewports in the walls of the fabrication chamber. A focused electromagnetic wave is generated external to the fabrication chamber, and directed through a viewport to impinge upon a selected portion of the planar surface of the wafer substrate at an oblique incident angle relative to the planar surface of the wafer substrate. In turn, a reflected electromagnetic wave emanating from the planar surface of the wafer substrate is detected. A signal processor then determines a reflection coefficient as a function of a selected characteristic of the focused electromagnetic wave and the reflected electromagnetic wave.

Non-destructive method and apparatus for monitoring a selected

A non-destructive method for monitoring the carrier lifetime characteristic of a fabricated semiconductor sample during the fabrication process, where selected materials are deposited on a planar surface of a wafer substrate in a fabrication chamber, employs one or more viewports in the walls of a fabrication chamber, thus avoiding any alteration of the fabrication process. A focused electromagnetic wave is generated external to the fabrication chamber, and directed through a viewport to impinge upon a selected portion of the planar surface of the wafer substrate at an oblique incident angle relative to the planar surface of the wafer substrate. In turn, a reflected electromagnetic wave emanating from the planar surface of the wafer substrate is detected. A light source, also external to the fabrication chamber, generates light directed at the wafer substrate through a viewport. The light is intended to have wavelength components capable of generating hole-electron pairs in the wafer substrate. In turn, the dynamic response of the reflected electromagnetic wave, in response to the light being changed from a light on condition to a light off condition, is utilized for determining a quantity indicative of the carrier lifetime characteristic of the fabricated semiconductor sample.

Non-destructive method and apparatus for monitoring carrier lifetime of

A three-dimensional interconnect package is provided for monolithic microwave/millimeterwave integrated circuits. A mating substrate for receiving an MMIC has transmission lines disposed over its surfaces. The mating substrate mounted substantially vertical in a base substrate which also has transmission lines for carrying microwave/millimeterwave signals. The transmission lines on both substrates are put in electrical contact and microwave/millimeterwave signals are transmitted between the substrates with a minimum of signal loss or reflection.

Three dimensional package for monolithic microwave/millimeterwave

A monolithic microwave integrated circuit broadband mixer in which the distributed amplifier concept is used to develop a broadband mixer circuit.

Growing community of inventors

Shakopee, MN, United States of America

Vladimir Sokolov