Trw Limited

Semicoa Semiconductors

Luminous Intent, Inc.

Other

Hughes Aircraft Company

Daleco Research Development

Molecular Electronics Corporation

Integrated Discrete Devices, LLC

Vladimir Rodov

Richard A Metzler

Meir Bartur

Alan L Harrington

Richard Allison

Otto Albrecht

Jack Y Josefowicz

David B Rensch

Debra Marr-Leisy

A bipolar transistor designed to support a substantially uniform current density in base and collector regions to prevent the characteristic early fall-off of bipolar transistor current gain, and to improve the forward safe operating area performance. The advantages of the present invention are achieved by optimally spacing the neighboring emitters in relation to base thickness and further by maintaining a symmetrical topology by the self-aligned formation of emitters and base contacts. The spacing distance between the neighboring emitters does not exceed the base thickness. As a result, the current density below each emitter island is substantially uniform and the transistor as a whole can conduct a higher total current. Moreover, the transistor inhibits formation of current filaments and hot spots because the electric field in the collector region is uniform.

Uniform current density and high current gain bipolar transistor

Capacitors, and methods of manufacturing the same, having a plurality of vertical plates formed on a substrate in a manner so as to have a high capacitance in a small space and to have good time and temperature stability. Vertical plates are initially formed as sidewall electrode depositions to pedestals formed on a substrate, and through a series of processing steps, additional vertical plates are formed so that multiple capacitor plate--dielectric--capacitor plate combinations are formed around each of the initial vertical plates.

Thin film capacitors

The present invention comprises capacitors, and methods of manufacturing the same, having a plurality of vertical plates formed on a substrate in a manner so as to have a high capacitance in a small space and to have good time and temperature stability. Vertical plates are initially formed as sidewall electrode depositions to pedestals formed on a substrate, and through a series of processing steps, additional vertical plates are formed so that multiple capacitor plate--dielectric--capacitor plate combinations are formed around each of the initial vertical plates. Exemplary embodiments and methods of fabrication are disclosed.

Semiconductor diodes having a low forward voltage conduction drop, a low reverse leakage current and a high voltage capability suitable for use in integrated circuits as well as for discrete devices. The semiconductor diodes are fabricated as field effect devices having a common gate and drain connection by a process which provides very short channels, shallow drain regions and longitudinally graded junctions. Continuation of the gate/drain contact layer over specially located, tapered edge field oxide maximizes the breakdown voltage of the devices. The preferred fabrication technique utilizes four masking steps, all without any critical mask alignment requirements. Various embodiments are disclosed.

Semiconductor diodes having low forward conduction voltage drop and low

The present invention discloses method for fabricating, and the structure of, a unique and novel bipolar transistor. The bipolar transistor of the present invention has a substantially uniform current density in base and collector regions. This uniform current density prevents the characteristic early fall-off of bipolar transistor current gain, and improves the forward safe operating area performance. As such, the bipolar transistor of the invention increases current gain at high collector currents, and expands the current and voltage region over which the device may safely operated. The advantages of the present invention are achieved by optimally spacing the neighboring emitters in relation to base thickness and further by maintaining a symmetrical topology by the self-aligned formation of emitters and base contacts. According to the invention, the emitters are optimally spaced so that the current emanating from an emitter would fill base and collector regions beneath and beside the emitter in a fashion to provide a uniform current distribution. As such, the entire base and collector regions below the center of a given emitter conduct the emitter majority carrier current in a substantially uniform manner. Therefore, the current density below each emitter island is substantially uniform and the transistor as a whole can conduct a higher total current. Furthermore, according to the invention, a uniform current flow is established before the carriers move out of the base region. The invented transistor inhibits formation of current filaments and hot spots because the electric field in the collector region is uniform.

A readily manufacturable field controlled thyristor with a first semiconductor region of n-type conductivity, a second semiconductor region of p-type in contact with said first region, a void penetrating through said first and second semiconductor regions, a fourth semiconductor region of n-type forming a channel adjacent to said void, a fifth semiconductor region, of p-type, in contact with said third region. The device has a large tolerance for deviations in process parameter precision and accuracy, which enables the device to be produced at a low cost.

Field controlled thyristor

A GaAs circuit structure is described which interposes a Langmuir-Blodgett (L-B) layer between the substrate and a conductive contact. The thickness of the layer is controlled to determine the operating characteristics of the device. The head group of the L-B molecule is chosen so that it passivates the surface states of the particular GaAs substrate being used. Certain preferred acids and amino head groups are disclosed. The L-B layer has been found to both increase the gate barrier height for an FET, and to passivate dangling bonds and surfaces defects in the GaAs substrate to enable inversion mode operation. Specific FET and diode devices are described.

Process of making GaAs electrical circuit devices with Langmuir-Blodgett

Disclosed is a method and apparatus for continuously forming and depositing a layer of monomolecular amphiphilic molecules on a substrate. The present invention includes an apparatus and method for transferring and compressing an uncompressed molecular layer from one liquid surface region in a tank to another adjacent liquid surface region by using non-moving or static mechanical components which do not come into direct contact with the monomolecular layer. The present invention includes a method and apparatus which permit the continuous and simultaneous draining and replenishing of the liquid in the tank while maintaining the liquid surface level constant. The continuous replacement of the liquid in the tank with clean liquid reduces the level of contamination of the liquid in the tank. In addition, the level, as well as the type of contamination of the liquid, does not vary significantly with time. This aspect of the present invention reduces the variation in the quality and characteristics of the monolayers that are produced in the tank and are deposited onto the substrate. Also by reducing the need to replace the liquid in the tank periodically, the present invention increases the efficiency of the process.

Method and apparatus for depositing monomolecular layers on a substrate

Disclosed is a method and apparatus for continuously forming and depositing a layer of monomolecular amphiphilic molecules on a substrate. The present invention includes an apparatus and method for transferring and compressing an uncompressed molecular layer from one liquid surface region to another adjacent liquid surface region by using non-moving or static mechanical components which do not come into direct contact with the monomolecular layer. The present invention is based on the fact that by continuously flowing liquid from one region to an adjacent region by using non-moving or static mechanical components that do not touch the monomolecular layer, a monomolecular layer having surprisingly little damage can be transported to the adjacent region and simultaneouly compressed by the flowing liquid surface. The monomolecular layer can then be coated onto a substrate. Due to the present invention, it is now commercially feasible to continuously supply one region with a solution of amphiphilic molecules, and then to deposit continuously onto a substrate or onto several substrates within a region in flow communication with the former region, the monomolecular layer which has been compressed and transported into this latter region.

A method for the fabrication of semiconductor devices, particularly bipolar silicon devices, having ultra-shallow but relatively large junctions. The process is characterized by the use of relatively low temperatures for critical oxidations steps and for ion-implantation steps. The region implantations are performed at low temperature and the necessary annealing steps are deferred until all of the regions are in place. Then a single pulse-annealing step is employed, to minimize further movement of the region junctions. Processing-induced defects are thereby reduced to a minimum, and the process can be used to produce ultra-shallow junctions in a reliable and repeatable manner.

Fabrication process for bipolar devices

A zig-zag V-groove configuration for use in V-MOS transistors is disclosed. Instead of merely forming parallel rows of V-grooves, a zig-zag configuration is used, utilizing two different directions for the V-grooves, at least one of which is not the conventional &lt;011&gt; direction. This configuration can be used with either the ladder or interdigitated configuration for the source contact and gate metals.

Zig-zag V-MOS transistor structure

A simplified method of fabricating V-groove junction field effect transistors using only two masking steps. The first masking step opens regions in an ohmic refractory metal layer deposited on a doped semiconductor wafer. V-grooves are anisotropically etched into the wafer through the openings, thereby defining source and drain regions and outer isolation V-grooves. The wafer is then coated with a passivating layer. The second masking step creates openings through the passivation layer to the source and drain regions, and electrical contacts to those regions are made. An ohmic contact to the back surface of the wafer forms the gate electrode. Multiple source and drain regions may be created between the outer isolation V-grooves and electrically parallel for a greater current rating.

Growing community of inventors

Redondo Beach, CA, United States of America

Vladimir Rodov