Intel Corporation

North Carolina State University

Vladimir Noveski

Aleksandar Aleksov

Sujit Sharan

Shankar Ganapathysubramanian

Raoul Schlesser

Zlatko Sitar

Nachiket R Raravikar

Neha M Patel

Rafael F Dalmau

Mohammad M Farahani

A layer or layers for use in package substrates and die spacers are described. The layer or layers include a plurality of ceramic wells lying within a plane and separated by metallic vias. Recesses within the ceramic wells are occupied by a dielectric filler material.

Package substrate and die spacer layers having a ceramic backbone

A stress sensor is disclosed herein. The stress sensor includes a plurality of carbon nanotubes in a substrate, and first and second contacts electrically connectable with the plurality of carbon nanotubes. Methods of making and using the stress sensor are also disclosed.

Stress sensor for in-situ measurement of package-induced stress in semiconductor devices

The invention provides a method of forming a dense, shaped article, such as a crucible, formed of a refractory material, the method comprising the steps of placing a refractory material having a melting point of at least about 2900&#xb0; C. in a mold configured to form the powder into an approximation of the desired shape. The mold containing the powder is treated at a temperature and pressure sufficient to form a shape-sustaining molded powder that conforms to the shape of the mold, wherein the treating step involves sintering or isostatic pressing. The shape-sustaining molded powder can be machined into the final desired shape and then sintered at a temperature and for a time sufficient to produce a dense, shaped article having a density of greater than about 90% and very low open porosity. Preferred refractory materials include tantalum carbide and niobium carbide.

Dense, shaped articles constructed of a refractory material and methods of preparing such articles

Methods for fabricating a layer or layers for use in package substrates and die spacers are described. In one implementation the layer or layers are fabricated to include a plurality of ceramic wells lying within a plane and separated by metallic via with recesses within the ceramic wells being occupied by a dielectric filler material.

Method for fabricating package substrate and die spacer layers having a ceramic backbone

A method of growing bulk single crystals of an AlN on a single crystal seed is provided, wherein an AlN source material is placed within a crucible chamber in spacial relationship to a seed fused to the cap of the crucible. The crucible is heated in a manner sufficient to establish a temperature gradient between the source material and the seed with the seed at a higher temperature than the source material such that the outer layer of the seed is evaporated, thereby cleaning the seed of contaminants and removing any damage to the seed incurred during seed preparation. Thereafter, the temperature gradient between the source material and the seed is inverted so that the source material is sublimed and deposited on the seed, thereby growing a bulk single crystal of AlN.

Seeded growth process for preparing aluminum nitride single crystals

The invention provides a method of forming a dense, shaped article, such as a crucible, formed of a refractory material, the method comprising the steps of placing a refractory material having a melting point of at least about 2900&#xb0; C. in a mold configured to form the powder into an approximation of the desired shape. The mold containing the powder is treated at a temperature and pressure sufficient to form a shape-sustaining molded powder that conforms to the shape of the mold, wherein the treating step involves sintering or isostatic pressing. The shape-sustaining molded powder can be machined into the final desired shap and then sintered at a temperature and for a time sufficient to produce a dense, shaped article having a density of greater than about 90% and very low open porosity. Preferred refractory materials include tantalum carbide and niobium carbide.

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Chandler, AZ, United States of America

Vladimir Noveski