Applied Materials, Inc.

Mattson Technology, Inc

Beijing E-town Semiconductor Technology, Co., Ltd

Vladimir Nagorny

Wei Liu

Rene George

Theresa Kramer Guarini

Kin Pong Lo

Malcolm J Bevan

Bernard Lloyd Hwang

Swayambhu Prasad Behera

Jacob Abraham

Shawming Ma

Martin L Zucker

Ryan M Pakulski

Dixit V Desai

Lara Hawrylchak

Jonathan David Mohn

Daniel J Devine

Johanes S Swenberg

Linlin Wang

Charles Crapuchettes

Andreas Kadavanich

Steven E Parks

Dongsoo Lee

The present technology encompasses plasma sources including a first plate defining a first plurality of apertures arranged in a first set of rows. The first plate may include a first set of electrodes extending along a separate row of the first set of rows. The plasma sources may include a second plate defining a second plurality of apertures arranged in a second set of rows. The second plate may include a second set of electrodes extending along a separate row of the second set of rows. Each aperture of the second plurality of apertures may be axially aligned with an aperture of the first plurality of apertures. The plasma sources may include a third plate positioned between the first plate and the second plate. The third plate may define a third plurality of apertures.

Plasma source for semiconductor processing

Devices, assemblies, and system including a plasma delivery device comprising a memory element that stores a first state or a second state. The memory element is configured to receive a first signal that causes the memory element to change between the first state and the second state. The plasma delivery device further includes a switch coupled to the memory element. The switch is configured to change between an open configuration and a closed configuration. The plasma delivery device further comprises a plasma emitter coupled to the switch. The plasma emitter is configured to be selectively activated and deactivated. The plasma emitter supplies plasma related fluxes to an environment proximate the plasma delivery device responsive to being activated. The plasma emitter is configured to receive a second signal that activates the plasma emitter based on the open configuration or the closed configuration of the switch.

Addressable plasma delivery methods and devices

Embodiments of the present disclosure generally relate to inductively coupled plasma sources and plasma processing apparatus. In at least one embodiment, plasma source includes a first sidewall and a gas injection insert defining a plasma source interior volume. The gas injection insert includes a peripheral gas injection port, a second sidewall disposed concentric with the first sidewall, and a center gas injection port. The plasma source includes a first induction coil disposed proximate the first sidewall and disposed around the first sidewall. The plasma source includes a first radio frequency power generator coupled with the first induction coil. The plasma source includes a second induction coil disposed proximate the second sidewall and disposed around the second sidewall. The plasma source includes a second radio frequency power generator coupled with the second induction coil.

Plasma sources and plasma processing apparatus thereof

Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of the disclosure relate to an edge ring. The edge ring may include an overhang ring.

Film thickness uniformity improvement using edge ring and bias electrode geometry

A system and method including a processing device. The processing device receives data including one or more plasma exposure durations of a plasma process. The plasma exposure duration are associated with a set of controlled elements. The processing device causes a each set of controlled elements to switch between a first mode of operation and a second mode of operation. Each set of controlled elements expose appropriate portion of a substrate to the plasma related fluxes. The first set of controlled elements process the substrate at an increased rate while operating in the first mode of operation relative to the second mode of operation. The processing device causes each set of controlled elements to operate in the first mode of operation for the appropriate time duration based on the received plasma exposure duration data.

Uniformity control for plasma processing

A system including a control plate disposed within a processing chamber. The control plate includes a set of plasma elements designed to independently expose a substrate disposed within the processing chamber to plasma related fluxes. The control plate is designed to independently activate the set of plasma elements. When activated the associated plasma elements expose the substrate to the plasma related fluxes and when not activated the associated plasma elements prevent exposure of the substrate to the plasma related fluxes. The control plate is designed to perform individual time-dependent activation of the set of plasma elements to selectively expose the substrate to the plasma related fluxes.

Digital control of plasma processing

Edge ring

A system and method including a processing device. The processing device receives data including a first set of plasma exposure values each associated with a respective plasma element of a plurality of plasma elements designed to generate plasma related fluxes. The processing device causes a plasma controller to activate the set of plasma elements based on the data to expose a substrate to the plasma related fluxes generated by the set of plasma elements during a plasma process. Each respective plasma element of the set of plasma elements is activated for a duration based on a respective plasma exposure value from the first plurality of plasma exposure values that is associated with the respective plasma element.

Image-based digital control of plasma processing

Embodiments of the present disclosure generally relate to inductively coupled plasma sources, plasma processing apparatus, and independent temperature control of plasma processing. In at least one embodiment, a method includes introducing a process gas into a gas injection channel and generating an inductively coupled plasma within the gas injection channel. The plasma includes at least one radical species selected from oxygen, nitrogen, hydrogen, NH and helium. The method includes delivering the plasma from the plasma source to a process chamber coupled therewith by flowing the plasma through a separation grid between the plasma source and a substrate. The method includes processing the substrate. Processing the substrate includes contacting the plasma including the at least one radical species with a first side of the substrate facing the separation grid and heating the substrate using a plurality of lamps located on a second side of the substrate opposite the separation grid.

Plasma processing with independent temperature control

Plasma strip tools with process uniformity control are provided. In one example implementation, a plasma processing apparatus includes a processing chamber, a first pedestal in the processing chamber operable to support a workpiece, and a second pedestal in the processing chamber operable to support another workpiece. The first pedestal can define a first processing station. The second pedestal can define a second processing station. The apparatus can further include a first plasma chamber disposed above the first processing station and a second plasma chamber disposed above the second processing station. The first plasma chamber can be associated with a first inductive plasma source. The first plasma chamber can be separated from the processing chamber by a first separation grid. The second plasma chamber can be associated with a second inductive plasma source. The second plasma chamber can be separated from the processing chamber by a second separation grid.

Plasma strip tool with uniformity control

A method of modifying a layer in a semiconductor device is provided. The method includes depositing a low quality film on a semiconductor substrate, and exposing a surface of the low quality film to a first process gas comprising helium while the substrate is heated to a first temperature, and exposing a surface of the low quality film to a second process gas comprising oxygen gas while the substrate is heated to a second temperature that is different than the first temperature. The electrical properties of the film are improved by undergoing the aforementioned processes.

Thin film treatment process

Plasma processing with post plasma gas injection is provided. In one example implementation, a plasma processing apparatus includes a plasma chamber. The apparatus includes a processing chamber separated from the plasma chamber. The processing chamber includes a substrate holder operable to support a workpiece. The apparatus includes a plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a separation grid separating the plasma chamber from the processing chamber. The separation grid can be configured to filter one or more ions generated in the plasma and allow the passage of neutral particles from the plasma chamber to the processing chamber. The apparatus can include at least one gas port configured to inject a gas into neutral particles passing through the separation grid.

Plasma processing apparatus with post plasma gas injection

Apparatus, systems, and methods for controlling azimuthal uniformity of an etch process in a plasma processing chamber are provided. In one embodiment, a plasma processing apparatus can include a plasma processing chamber and an RF cage disposed above the plasma processing chamber. A dielectric window can separate the plasma processing chamber and the RF cage. The apparatus can include a plasma generating coil disposed above the dielectric window. The plasma generating coil can be operable to generate an inductively coupled plasma in the plasma processing chamber when energized. The apparatus further includes a conductive surface disposed within the RF cage proximate to at least a portion of the plasma generating coil. The conductive surface is arranged to generate an azimuthally variable inductive coupling between the conductive surface and the plasma generating coil when the plasma generating coil is energized.

Growing community of inventors

Tracy, CA, United States of America

Vladimir Nagorny