Trw Limited

Vladimir Medvedev

Michael Edward Barsky

Richard Lai

Yaochung Chen

Harvey Newell Rogers

A method is provided for backside processing a semiconductor wafer ( ) including applying a polymer based protective coating ( ) on the wafer, depositing a barrier layer of ceramic ( ) on the protective coating, and coating the ceramic layer with a thermoplastic based adhesive ( ). Thereafter, the wafer ( ) is bonded to a perforated substrate ( ) and then lapped and polished to a desired thickness and patterned with an etch mask. A high temperature plasma etching process is then used to etch via holes in the wafer ( ). After etching and subsequent backside processing, the adhesive layer ( ) is dissolved in acetone to separate the wafer ( ) from the substrate ( ). The protective coating ( ) is then dissolved with a solvent to separate the ceramic layer ( ) from the finished wafer ( ).

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Rancho Palos Verdes, CA, United States of America

Vladimir Medvedev