Technische Unversität Berlin

Pbc Lasers Gmbh

Vladimir Kalosha

Dieter Bimberg

Kristijan Posilovic

Device comprising a high brightness broad-area edge-emitting semiconductor laser and method of making the same. The device includes an edge-emitting semiconductor laser, said laser having a multi-layered waveguide, and said waveguide comprising at least one layer with an active region that emits light under electrical injection, and at least one aperiodic layer stack.

Device comprising a high brightness broad-area edge-emitting semiconductor laser and method of making the same

An embodiment of the invention relates to a device comprising a laser and a waveguide stripe or netlike hexagonal stripe structure, which allows propagation of multitude of the lateral modes in the waveguide stripe or stripe structure, wherein the waveguide stripe has at least one corrugated edge section along its longitudinal axis to provide preferable amplification of the fundamental lateral mode or in-phase supermode and to obtain high brightness of the emitted radiation.

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Berlin, Germany

Vladimir Kalosha