Kovio, Inc.

Enovix Corporation

Thin Film Electronics Asa

Nanogram Corporation

Enovix Operations Inc.

Vladimir K Dioumaev

Joerg Rockenberger

Wenzhuo Guo

Brent Ridley

Murali Ramasubramanian

Ashok Lahiri

Harrold Jones Rust, Iii

James D Wilcox

Nirav S Shah

James Montague Cleeves

Fabio Zürcher

Christopher J Spindt

Klaus Kunze

John F Varni

Robert S Busacca

Lynn Van Erden

Bruno A Valdes

Kim Han Lee

Richard J Contreras

Gardner Cameron Dales

Geoffrey Matthew Ho

Robert M Spotnitz

Michael J Armstrong

Laurie Jane Lauchlan

Brian E Brusca

Gunther A Koblmiller

Hui Du

Shivkumar Chiruvolu

Erik C Scher

Arvind Kamath

Nobuyuki Kambe

Steven E Molesa

Dmitry Karshtedt

Henry Hieslmair

Ikuo Mori

Fabio Zūrcher

A secondary battery is provided for cycling between a charged and a discharged state, the secondary battery including a battery enclosure, an electrode assembly, carrier ions, a non-aqueous liquid electrolyte within the battery enclosure, and a set of electrode constraints. The set of electrode constraints includes a primary constraint system having first and second primary growth constraints and at least one primary connecting member, the first and second primary growth constraints separated from each other in the longitudinal direction, wherein the primary constraint array restrains growth of the electrode assembly in the longitudinal direction such that any increase in the Feret diameter of the electrode assembly in the longitudinal direction over 20 consecutive cycles of the secondary battery is less than 20%. The set of electrode constraints further includes a secondary constraint system having first and second secondary growth constraints connected by at least one secondary connecting member, wherein the secondary constraint system at least partially restrains growth of the electrode assembly in a second direction upon cycling of the secondary battery.

Dimensional constraints for three-dimensional batteries

An electrode structure for use in an energy storage device, the electrode structure comprising a population of electrodes, a population of counter-electrodes and an electrically insulating material layer separating members of the electrode population from members of the counter-electrode population, each member of the electrode population having a longitudinal axis Athat is surrounded by the electrically insulating separator layer.

Separators for three-dimensional batteries

Embodiments relate to printing features from an ink containing a material precursor. In some embodiments, the material includes an electrically active material, such as a semiconductor, a metal, or a combination thereof. In another embodiment, the material includes a dielectric. The embodiments provide improved printing process conditions that allow for more precise control of the shape, profile and dimensions of a printed line or other feature. The composition(s) and/or method(s) improve control of pinning by increasing the viscosity and mass loading of components in the ink. An exemplary method thus includes printing an ink comprising a material precursor and a solvent in a pattern on the substrate; precipitating the precursor in the pattern to form a pinning line; substantially evaporating the solvent to form a feature of the material precursor defined by the pinning line; and converting the material precursor to the patterned material.

Print processing for patterned conductor, semiconductor and dielectric materials

Heterocyclosilane compounds and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous silicon film (that may also be hydrogenated to some extent) or doped polycrystalline semiconductor film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a 'doped liquid silicon' composition.

Heterocyclic semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions

Highly uniform silicon/germanium nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silicon/germanium particles can be surface modified to form the dispersions. The silicon/germanium nanoparticles can be doped to change the particle properties. The dispersions can be printed as an ink for appropriate applications. The dispersions can be used to form selectively doped deposits of semiconductor materials such as for the formation of photovoltaic cells or for the formation of printed electronic circuits.

Silicon/germanium particle inks, doped particles, printing and processes for semiconductor applications

Dopant-group substituted (cyclo)silane compounds, liquid-phase compositions containing such compounds, and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous or polycrystalline silicon film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a doped 'liquid silicon' composition.

Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions

Polysilanes, inks containing the same, and methods for their preparation are disclosed. The polysilane may have the formula H-[(AHR)(c-AH)]&#x2014;H, where A is independently Si or Ge; R is H, -AHR, halogen, aryl or substituted aryl; (n+a)&#x2267;10 if q=0, q&#x2267;3 if n=0, and (n+q)&#x2267;6 if both n and q&#x2260;0; p is 1 or 2; and m is from 3 to 12. The method may include combining a silane compound of the formula AHR, AHRand/or c-AHRwith a catalyst of the formula RRMX(or an immobilized derivative thereof) to form a poly(aryl)silane; then washing the poly(aryl)silane with an aqueous washing composition and contacting the poly(aryl)silane with an adsorbent to remove the metal M. Alternatively, the method may include halogenating a polyarylsilane and reducing the halopolysilane with a metal hydride to form the polysilane.

Polysilane compositions, methods for their synthesis and films formed therefrom

Methods are disclosed for making crosslinked polysilanes and polygermanes, preferably having either hydrogen or halogen substituent groups. These crosslinked polymers are prepared by catalytic polymerization such as the dehalogenative coupling or dehydrocoupling. The crosslinked polymers having no more than 10% of the chain atoms involved in crosslinking. Also disclosed are compositions containing these crosslinked polymers in a solvent to enable the composition to be deposited on a substrate using a liquid deposition technique.

Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions

Growing community of inventors

Mountain View, CA, United States of America

Vladimir K Dioumaev