Other

Vladimir Anatolievich Samorodov

Alexandr Tursunovich Rakhimov

Alexandr Alexandrovich Blyablin

Nikolai Vladislavovich Suetin

Boris Vadimovich Seleznev

Andrei Alexandrovich Pilevsky

Mikhail Arkadievich Timofeev

Nikolaii Vladislavovich Suetin

Anton Valerievich Kandidov

The inventive method relates to microelectronic and consists in the application of an emission layer to elements of an addressable field-emission electrode with the aid of a gas-phase synthesis method in a hydrogen flow accompanied by a supply of a carbonaceous gas. A dielectric backing is made of a high-temperature resistant material and discrete elements of the addressable field-emission electrode are made of a high-temperature resistant metal. The growth rate of the emission layer on the dielectric backing is smaller than the growth rate of the emission layer on the metallic discrete elements as a result of a selected process of depositing the carbonaceous emission layer, namely the backing temperature, the temperature of the reactor threads, the pumping speed of a gas mixture through the reactor, a selected distance between the reactor threads and the backing and a settling time. The cathode metallic discrete elements can be made of two metallic layers. The upper metallic layer is removed before the formation of required configurations from the remaining layer. The layer materials are selected in such a way that the emission characteristics thereof can ensure a required current from the upper metallic layer. For producing a display structure, a control grid is obtained from the metal layer having an emission threshold higher than a field density at which the cathode emits the required current. The inventive method enables to avoid operations of removing the emission layer making it possible to produce flat displays having high characteristics in addition to high performance and low cost.

Method for producing an addressable field-emission cathode and an associated display structure

The present invention may be used in the production of highly efficient films for electron field emitters. The cold-emission cathode of the present invention comprises a substrate having a carbon film with an irregular structure applied thereon. This structure comprises carbon micro- and nano-ridges and/or micro- and nano-threads which are perpendicular to the surface of the substrate, which have a typical size of between 0.005 and 1 micron as well as a distribution density of between 0.1 and 100 &mgr;m , and which are coated with a diamond nano-film whose thickness represents a fraction of a micron. The method for producing the cathode involves sequentially depositing two carbon films. A carbon film with nano-barbs is first deposited on a substrate arranged on an anode by igniting a direct-current discharge at a density of between 0.15 and 0.5 A. This deposition is carried out in a mixture containing hydrogen and a carbon-containing additive, under a global pressure of between 50 and 300 torrs, using vapors of ethylic alcohol at a 5 to 15% concentration or vapors of methane at a 6 to 30% concentration, and at a temperature on the substrate of between 600 and 1100&deg; C. A diamond nano-film is then deposited on the graphite film thus grown.

Cold-emission film-type cathode and method for producing the same

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Moscow, Russia

Vladimir Anatolievich Samorodov