Carl Zeiss Smt Gmbh

Carl-zeiss-smt Ag

Asml Netherlands B.v.

Vladan Blahnik

Daniel Kraehmer

Wilhelm Ulrich

Norbert Wabra

Ulrich Loering

Wolfgang Singer

Damian Fiolka

Michael Totzeck

Johannes Ruoff

Steven George Hansen

Donis George Flagello

Ralf Mueller

Bernd Geh

A lithography projection objective for imaging a pattern in an object plane onto a substrate in an image plane. The projection objective comprises a multiplicity of optical elements along an optical axis. The optical elements comprise a first group of optical elements following the object plane, and a last optical element, following the first group and next to the image plane. The projection objective is tunable or tuned with respect to aberrations for the case that the volume between the last optical element and the image plane is filled by an immersion medium with a refractive index substantially greater than 1. The position of the last optical element is adjustable in the direction of the optical axis. A positioning device is provided that positions at least the last optical element during immersion operation such that aberrations induced by disturbance are at least partially compensated.

Lithography projection objective, and a method for correcting image defects of the same

The disclosure provides a microlithography projection objective which includes a plurality of optical elements along the optical axis of the projection objective. The plurality of optical elements includes a last optical element and a penultimate optical element. A distance between the last optical element and the penultimate optical element is variable. The disclosure also provides a microlithography projection exposure machine including such a projection objective, and a method of making semiconductor components using such a projection exposure machine.

A microlithographic projection exposure apparatus includes an illumination system and a projection objective. During use of the microlithographic projection exposure apparatus, the illumination system illuminates an object plane of the projection objective. The illumination system is configured so that light components in point-symmetrical relationship with each other, which are produced during use of the illumination system and which are only superposed in the object plane, have mutually orthogonal polarization states.

Illumination system of a microlithographic projection exposure apparatus

The present disclosure relates to specification, optimization and matching of optical systems by use of orientation Zernike polynomials. In some embodiments, a method for assessing the suitability of an optical system of a microlithographic projection exposure apparatus is provided. The method can include determining a Jones pupil of the optical system, at least approximately describing the Jones pupil using an expansion into orientation Zernike polynomials, and assessing the suitability of the optical system on the basis of the expansion coefficient of at least one of the orientation Zernike polynomials in the expansion.

Optimization and matching of optical systems by use of orientation Zernike polynomials

Projection objectives, as well as related components, systems and methods, are disclosed. In general, a projection objective is configured to image radiation from an object plane to an image plane. A projection objective can include a plurality of optical elements along the optical axis. The plurality of optical elements can include a group of optical elements and a last optical element which is closest to the image plane, and a positioning device configured to move the last optical element relative to the image plane. Typically, a projection objective is configured to be used in a microlithography projection exposure machine.

A lithographic apparatus includes an illumination unit including a radiation source configured to generate a radiation bundle, an illumination optics with a numerical aperture NAand an aperture system; a projection lens having a first numerical aperture NA; a support arranged between the illumination unit and the projection lens and configured to support a patterning device; a substrate support configured to support a substrate on which structures on the patterning device are imaged, wherein the first numerical aperture NAof the projection lens is smaller than the numerical aperture NAof the illumination unit.

Lithographic apparatus and device manufacturing method

A lithography projection objective for imaging a pattern to be arranged in an object plane of the projection objective onto a substrate to be arranged in an image plane of the projection objective comprises a multiplicity of optical elements that are arranged along an optical axis of the projection objective. The optical elements comprise a first group, following the object plane, of optical elements, and a last optical element, which follows the first group and is next to the image plane and which defines an exit surface of the projection objective and is arranged at a working distance from the image plane. The projection objective is tunable or tuned with respect to aberrations for the case that the volume between the last optical element and the image plane is filled by an immersion medium with a refractive index substantially greater than 1. The position of the last optical element is adjustable in the direction of the optical axis. A positioning device is provided that positions at least the last optical element during immersion operation such that aberrations induced by disturbance are at least partially compensated.

Growing community of inventors

Aalen, Germany

Vladan Blahnik