Northrop Grumman Systems Corporation

Vivien M Luu

Michael Rennie

Christopher F Kirby

Brian Paul Wagner

Sean R McLaughlin

Sean R Mclaughlin

A method of forming a superconductor interconnect structure is disclosed. The method includes forming a dielectric layer overlying a substrate, forming an interconnect opening in the dielectric layer, and moving the substrate to a deposition chamber. The method further includes depositing a superconducting metal in the interconnect opening, by performing a series of superconducting deposition and cooling processes to maintain a chamber temperature at or below a predetermined temperature until the superconducting metal has a desired thickness, to form a superconducting element in the superconductor interconnect structure.

Deposition methodology for superconductor interconnects

A method is provided of forming a superconductor interconnect structure. The method comprises forming a dielectric layer overlying a substrate, forming an interconnect opening in the dielectric layer, and moving the substrate to a deposition chamber. The method further comprises performing a cleaning process on the top surface of the dielectric layer and in the interconnect opening while in the deposition chamber, and depositing a superconducting metal in the interconnect opening while in the deposition chamber to form a superconducting element in the superconductor interconnect structure.

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Linthicum, MD, United States of America

Vivien M Luu