Chartered Semiconductor Manufacturing Ltd (corporation)

Vivian Ng

Lap Chan

Wai Kin Chim

Wee Kiong Choi

Lee Wee Teo

Vincent Ho

Cheng Lin Heng

Devices with embedded silicon or germanium nanocrystals, fabricated using ion implantation, exhibit superior data-retention characteristics relative to conventional floating-gate devices. However, the prior art use of ion implantation for their manufacture introduces several problems. These have been overcome by initial use of rapid thermal oxidation to grow a high quality layer of thin tunnel oxide. Chemical vapor deposition is then used to deposit a germanium doped oxide layer. A capping oxide is then deposited following which the structure is rapid thermally annealed to synthesize the germanium nanocrystals.

Process to manufacture nonvolatile MOS memory device

A Flash memory is provided having a trilayer structure of rapid thermal oxide/germanium (Ge) nanocrystals in silicon dioxide (SiO )/sputtered SiO cap with demonstrated via capacitance versus voltage (C-V) measurements having memory hysteresis due to Ge nanocrystals in the middle layer of the trilayer structure. The Ge nanocrystals are synthesized by rapid thermal annealing of a co-sputtered Ge&plus;SiO layer.

Nanocrystal flash memory device and manufacturing method therefor

Growing community of inventors

Singapore, Singapore

Vivian Ng