Nan Ya Technology Corporation

Vivek Gopalan

Robert B Kerr

Hung-Ming Tsai

A method for forming a buried conductive line is described. A substrate having a trench therein and a contact area thereon is provided, wherein the trench has an end portion in the contact area and a conductive layer is filled in the trench. A mask layer is formed covering the conductive layer in the contact area. The conductive layer is etched back using the mask layer as a mask.

Method for forming buried conductive line and structure of buried conductive line

A memory process is described. A substrate is provided, having therein trenches and conductive lines buried in the trenches and having thereon an array area, wherein each of the conductive lines has an array portion in the array area. A contact area apart from the array area is defined on the substrate, wherein each of the conductive lines has a contact portion in the contact area. The substrate between the contact portions of the conductive lines is etched down to below the tops of the conductive layers to form gaps between the contact portions of the conductive lines. The gaps are then filled with an insulating layer.

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Boise, ID, United States of America

Vivek Gopalan