Applied Materials, Inc.

Comment Bubble, Inc.

Vivek Agrawal

Mingwei Zhu

Anantha K Subramani

Rongjun Wang

Nag B Patibandla

Daniel Lee Diehl

Xianmin Tang

Omkaram Nalamasu

Muhammad M Rasheed

Cheng-Hsiung Matt Tsai

Dinesh Saigal

Praburam Gopal Raja

Nag B Patibandia

Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

Oxygen controlled PVD ALN buffer for GAN-based optoelectronic and electronic devices

Oxygen controlled PVD AlN buffer for GaN-based optoelectronic and electronic devices

Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

PVD buffer layers for LED fabrication

Embodiments of the invention described herein generally relate to an apparatus and methods for forming high quality buffer layers and Group III-V layers that are used to form a useful semiconductor device, such as a power device, light emitting diode (LED), laser diode (LD) or other useful device. Embodiments of the invention may also include an apparatus and methods for forming high quality buffer layers, Group III-V layers and electrode layers that are used to form a useful semiconductor device. In some embodiments, an apparatus and method includes the use of one or more cluster tools having one or more physical vapor deposition (PVD) chambers that are adapted to deposit a high quality aluminum nitride (AlN) buffer layer that has a high crystalline orientation on a surface of a plurality of substrates at the same time.

Aluminum-nitride buffer and active layers by physical vapor deposition

Oxygen controlled PVD aluminum nitride buffer for gallium nitride-based optoelectronic and electronic devices

A video commentary system receives video content items from users in a community. Such video content items are presented to viewers in the community. The system presents submission controls through which the viewers can submit feedback related to specific time points within that presentation. The controls can be used to submit textual, video, or audio comments. The controls can include labeled buttons that viewers can activate to submit categorized comments. Each submission is associated with a timestamp corresponding to the current video frame. The user interface includes regions that display, in real-time, the submissions received from the viewers. Submissions can indicate their timestamps. A bar graph indicates, by category and by time interval, quantities of categorized comments that have been received relating to various time intervals in the presentation.

Timestamped commentary system for video content

Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.

Gallium nitride-based LED fabrication with PVD-formed aluminum nitride buffer layer

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Fremont, CA, United States of America

Vivek Agrawal