Psiquantum Corp.

Vitor Riseti Manfrinato

Faraz Najafi

Vimal Kumar Kamineni

Syrus Ziai

George Kovall

Chia-Jung Chung

Mark G Thompson

Mark Thompson

A superconductor device includes a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen, and a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen, and superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

Superconducting nanowire single photon detector and method of fabrication thereof

A superconducting circuit includes a photon detector component, a second component, and a multi-taper superconducting connector shaped to reduce current crowding, the superconducting connector electrically connecting the photon detector component and the second component. The multi-taper superconducting connector includes a first taper arranged adjacent the photon detector component and a second taper arranged adjacent the second component.

Tapered connectors for superconductor circuits

A superconducting circuit includes a first component having a first connection point. The first connection point has a first width. The superconducting circuit includes a second component having a second connection point. The second connection point has a second width that is larger than the first width. The superconducting circuit includes a superconducting connector shaped to reduce current crowding. The superconducting connector electrically connects the first connection point and the second connection point. The superconducting connector includes a first taper positioned adjacent the first connection point and having a non-linear shape and a second taper positioned adjacent the second connection point.

A superconductor device is manufactured by depositing a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen; depositing a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen; depositing the superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate; and depositing a silicon cap layer over the superconductor layer. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

The various embodiments described herein include methods, devices, and circuits for reducing or minimizing current crowding effects in manufactured superconductors. In some embodiments, a superconducting circuit includes: (1) a first component having a first connection point, the first connection point having a first width; (2) a second component having a second connection point, the second connection point having a second width that is larger than the first width; and (3) a connector electrically connecting the first connection point and the second connection point, the connector including: (a) a first taper having a first slope and a non-linear shape; (b) a second taper having a second slope; and (c) a connecting portion connecting the first taper to the second taper, the connecting portion having a third slope that is less than the first slope and less than the second slope.

A superconductor device according to some embodiments comprises a superconductor stack, which includes a superconductor layer and a silicon cap layer over the superconductor layer, the cap layer including amorphous silicon. The superconductor device further comprises a metal contact over a portion of the silicon cap layer and electrically-coupled to the superconductor layer. The metal contact comprises a core including a first metal, and an outer layer around the core that includes a second metal. The portion of the silicon cap layer is converted from silicon to a conductive compound including the second metal to provide low-resistance electrical coupling between the superconductor layer and the metal contact. The superconductor device further comprises a waveguide, and the first portion of the cap layer under the metal contact is at a sufficient lateral distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

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San Jose, CA, United States of America

Vitor Riseti Manfrinato