Globalfoundries Inc.

Motivo, Inc.

Globalfoundries Singapore Pte. Ltd.

Advanced Micro Devices Corporation

Vito Dai

Luigi Capodieci

Ji Xu

Bharath Rangarajan

Yi Zou

Lynn Wang

Edward Kah Ching Teoh

Azat M Latypov

Jie Yang

Piyush Pathak

Swamy Muddu

Chiu Wing Hui

Kah Ching Edward Teoh

Beng Lye Oh

Yeow Loye Siew

Norma Rodriguez

Rani Abou Ghaida

Ahmed Mohyeldin

Swamy Maddu

Peng Xie

In an embodiment, a method for optimizing an integrated circuit physical design for an integrated circuit. A physical design graph includes a plurality of physical design sub-configurations, each including a placement of a group of physical cells and having annotated characteristics. The method includes identifying, in the integrated circuit physical design, a first physical design sub-configuration including a first placement of a first group of the physical cells and having first annotated characteristics, the first annotated characteristics being outside target characteristics. The method includes selecting from the physical design graph, based on the first group of the physical cells and the target characteristics, at least a second physical design sub-configuration including a second placement of the first group of the physical cells and being within the target characteristics. The method includes replacing the first physical design sub-configuration in the integrated circuit physical design with the second physical design sub-configuration.

Optimization of physical cell placement for integrated circuits

In an embodiment, a method for designing an integrated circuit with target characteristics uses a physical design graph. The physical design graph includes a plurality of physical design sub-configurations, each of the plurality of physical design sub-configurations including a placement of a group of physical cells and having annotated characteristics. The method includes partitioning an integrated circuit electrical design into a plurality of electrical design sub-configurations, including a specific electrical design sub-configuration requiring a specific group of the physical cells. The method includes selecting from the physical design graph, based on the required specific group of the physical cells and the target characteristics, a physical design sub-configuration including the specific group of the physical cells in a specific placement and having the target characteristics. The method includes determining an integrated circuit physical design for manufacturing the integrated circuit.

And optimization of physical cell placement

Methods for integrated circuit design are provided. In one embodiment, a method for determining a physical layout pattern includes accessing a layout pattern configuration graph. The graph includes layout pattern configurations meeting a circuit requirements. At least two of the layout pattern configurations are annotated with characteristics by analyzing sample layout patterns. An integrated circuit electrical design is partitioned into circuit design configurations. One of the circuit design configurations meets one of the circuit requirements. One of the layout pattern configurations is selected from the layout pattern configuration graph to meet the selected circuit requirements. In another embodiment, a method for determining a netlist for an integrated circuit electrical design is provided. In a further embodiment, a method for determining a tool configuration for a manufacturing process is provided.

Integrated circuit design systems and methods

Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes generating a photomask for forming a DSA directing pattern on a semiconductor substrate. The DSA directing pattern is configured to guide a self-assembly material deposited thereon that undergoes directed self-assembly (DSA) to form a DSA pattern. Generating the photomask includes using a computing system, inputting a DSA target pattern and an initial pattern. An output mask writer pattern is produced from the initial pattern using the computing system, the DSA target pattern, a DSA model, an OPC model, and a MPC model. The output mask writer pattern is for a mask writer to write on the photomask.

Methods for fabricating integrated circuits including generating photomasks for directed self-assembly

System and methods for design-for-manufacturing and design-enabled-manufacturing (DFM-DEM) proactive integrated manufacturing flow are presented. A method includes receiving design data related to layout of an integrated circuit (IC); extracting information from the design data; and performing analysis on the extracted information. The method also enables DFM-DEM aware manufacturing applications using information stored in a knowledge database. The method further updates the knowledge database with new information learned from at least the extracted information and the analysis.

Design-for-manufacturing&#x2014;design-enabled-manufacturing (DFM-DEM) proactive integrated manufacturing flow

Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes generating an e-beam pattern for forming a DSA directing pattern on a semiconductor substrate. The DSA directing pattern is configured to guide a self-assembly material deposited thereon that undergoes directed self-assembly (DSA) to form a DSA pattern. Generating the e-beam pattern includes using a computing system, inputting a DSA target pattern. Using the computing system, the DSA target pattern, a DSA model, and an EBPC model, an output EBPCed pattern is produced for an e-beam writer to write on a resist layer that overlies the semiconductor substrate.

Methods for fabricating integrated circuits including generating e-beam patterns for directed self-assembly

Methods for forming a DSA pre-patterned semiconductor transistor layout and the resulting devices are disclosed. Embodiments may include forming a pre-patterned transistor layout by directed self-assembly (DSA), forming a metal layer over the DSA pre-patterned transistor layout, including: forming a plurality of horizontal metal lines; and forming a plurality of vertical metal segments discontinuous from and between adjacent horizontal metal lines; and forming one or more bridging dots each connecting one of the plurality of horizontal metal lines to one of the plurality of vertical metal segments, wherein locations of the bridging dots determine logic functions of resulting transistor cells.

Metal layer enabling directed self-assembly semiconductor layout designs

Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes generating a photomask for forming a DSA directing pattern on a semiconductor substrate. The DSA directing pattern is configured to guide a self-assembly material deposited thereon that undergoes directed self-assembly (DSA) to form a DSA pattern. Generating the photomask includes, using a computing system, inputting a DSA target pattern. Using the computing system, a DSA model, an OPC model, and a MPC model, cooperatively running a DSA PC algorithm, an OPC algorithm, and a MPC algorithm to produce an output MPCed pattern for a mask writer to write on the photomask.

A process and apparatus are provided for automated pattern-based semiconductor design layout correction. Embodiments include scanning a drawn semiconductor design layout to determine a difficult-to-manufacture pattern within the drawn semiconductor design layout based on a match with a pre-characterized difficult-to-manufacture pattern, determining a corrected pattern based on a pre-determined correlation between the corrected pattern and the pre-characterized difficult-to-manufacture pattern, and replacing the difficult-to-manufacture pattern with the corrected pattern within the drawn semiconductor design layout.

Automated design layout pattern correction based on context-aware patterns

One illustrative method disclosed herein involves producing an initial circuit layout, prior to decomposing the initial circuit layout, identifying at least one potential non-double-patterning-compliant (NDPC) pattern in the initial circuit layout, fixing the at least one potential non-double-patterning-compliant (NDPC) pattern so as to produce a double-patterning-compliant (DPT) pattern, producing a modified circuit layout by removing the potential non-double-patterning-compliant (NDPC) pattern and adding the double-patterning-compliant (DPT) pattern to the initial circuit layout, and performing design rule checking and double patterning compliance checking on the modified circuit layout.

Methods involving pattern matching to identify and resolve potential non-double-patterning-compliant patterns in double patterning applications

A process and apparatus are provided for automated pattern-based semiconductor design layout correction. Embodiments include: determining a portion of a layout of an IC design, the portion comprising a first pattern of a plurality of routes connecting a plurality of design connections; determining one or more sets of the plurality of design connections based on the plurality of routes; and determining, by a processor, a second pattern of a plurality of routes connecting the plurality of design connections within the portion based on the one or more sets.

Layout pattern correction for integrated circuits

Methods for fabricating semiconductor devices are provided. In an embodiment, a method of fabricating a semiconductor device includes scanning a circuit design layout and proposing patterns for decomposed layouts. The proposed patterns are then compared with a library of prior patterns including a category of forbidden patterns and a category of preferred patterns. If a selected proposed pattern matches a forbidden pattern, the selected proposed pattern is eliminated. If the selected proposed pattern matches a preferred pattern, then the selected proposed pattern is identified for use in the decomposed layouts. Decomposed layouts are generated from the identified patterns. A plurality of masks is fabricated based on the decomposed layouts. Then a multiple patterning lithographic technique is performed with the plurality of masks on a semiconductor substrate.

Methods for decomposing circuit design layouts and for fabricating semiconductor devices using decomposed patterns

An approach is provided for pattern adjusted timing via pattern matching. Embodiments include receiving data corresponding to a problematic layout pattern associated with at least one performance characteristic and data corresponding to an integrated circuit layout design, scanning the integrated circuit layout design for the problematic layout pattern, identifying at least one portion of the integrated circuit layout design substantially matching the problematic layout pattern, and modifying a netlist associated with the integrated circuit layout design, the modification being based on the at least one performance characteristic.

Method and apparatus for pattern adjusted timing via pattern matching

A method for fabricating an integrated circuit is disclosed that includes, in accordance with an embodiment, providing a drawn layout logical design for the integrated circuit, the logical design including a plurality of patterns; checking the plurality of patterns for double patterning technology compliance; identifying a non-double patterning technology compliant pattern; providing a double patterning technology compliant pattern for replacing the identified non-double patterning technology compliant pattern, thereby creating a modified logical design; generating a mask set implementing the modified logical design; and employing the mask set to implement the modified logical design in and on a semiconductor substrate.

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Santa Clara, CA, United States of America

Vito Dai