The Texas A&M University System

Vitaly V Kocharovsky

Marlan O Scully

Alexey Belyanin

Robert W Boyd

Vladimir V Kocharovsky

Clovis R Haden

Infrared generation is disclosed. A first laser field having a first frequency associated with a first interband transition is generated. A second laser field having a second frequency associated with a second interband transition is generated. The generation of the first laser field occurs substantially simultaneously with the generation of the second laser field. A third laser field is generated from the first laser field and the second laser field. The third laser field has a third frequency associated with an intersubband transition. The third frequency is substantially equivalent to a difference between the second frequency and the first frequency.

Infrared generation in semiconductor lasers

According to one embodiment, detecting radiation includes receiving a first laser drive field at a cell comprising a medium having a number of states. The first laser drive field has a frequency approximately equivalent to a transition frequency between a first state and a second state. A second laser drive field having a frequency approximately equivalent to a transition frequency between the first state and a third state, and an infrared field having a frequency approximately equivalent to a transition frequency between the third state and a fourth state are received. The medium has a transition between the second state and the third state substantially forbidden to support optimal coherence on the transition between the second state and the third state. The infrared field is upconverted to generate a detectable field having a frequency approximately equivalent to a transition frequency between the second state and the fourth state.

Growing community of inventors

College Station, TX, United States of America

Vitaly V Kocharovsky