Technion Research & Development Foundation Limited

Vitali Savuskan

Yael Nemirovsky

Amos Fenigstein

Amikam Nemirovsky

Tomer Leitner

Igor Brouk

Sharon Bar-Lev Shefi

Gil Visokolov

Tomer Merhav

A device that may include a narrowband filter that is arranged to pass radiation within a main signal waveband in which a muzzle flash is expected to include energy above a first energy threshold; a first single photon avalanche diode (SPAD) arranged to detect photons of the main signal waveband during different points in time and to output first digital detection signals representative of the photons of the main signal waveband; and a signal processor that is arranged to receive the first digital detection signals and to detect, in response to at least the first digital detection signals, the muzzle flash.

Muzzle flash detection

A semiconductor device that may include an avalanche photodiode (APD), the APD may include: a first doped region of a first polarity; a buried guard ring of a second polarity, the second polarity is opposite to the first polarity, the buried guard ring is spaced apart from the first doped region and is positioned below the first doped region; a well of the second polarity, wherein the well interfaces the first doped region to form a p-n junction; and a second doped region of the second polarity, the second doped region is spaced apart from the first doped region.

Device having an avalanche photo diode and a method for sensing photons

Growing community of inventors

Haifa, Israel

Vitali Savuskan