National Semiconductor Corporation

Casinda Inc.

Texas Instruments Corporation

Lsi Logic Corporation

Visvamohan Yegnashankaran

Gobi R Padmanabhan

Hengyang James Lin

Peter J Hopper

Reda R Razouk

Surendra Kumar Rathaur

Jimmy Yong Xiao

William David French

Philipp Lindorfer

Ahmad Reza Bahai

Abdalla Aly Naem

Shaw Wei Lee

Nghia Thuc Tu

Kevin C Weaver

John P Daane

James W Hively

Sadanand R Patil

Joseph M Zelayeta

An embodiment of the present invention is an identification circuit for generating an identification number (ID). The identification circuit includes a plurality of identification cells each comprising a latch having a first output and a second output that are opposite to each other. The first output and the second output are a function of process variations of the identification circuit. A first buffer and a second buffer are provided on both sides of the latch and connected to the first output and the second output of the latch, respectively.

Integrated circuit (IC) chip comprising an identification circuit

Identification circuit and IC chip comprising the same

A self-propelled robotic device moves through bodily and other passageways by inflating regions of an overlying bladder along the length of the robotic device in a sequence that imparts motion to the device. The regions of the overlying bladder are inflated by energizing a plurality of coils, which are surrounded by a ferrofluid, in a sequence. The ferrofluid responds to the magnetic field created by an energized coil by creating a bulge in the side wall of the overlying bladder.

Self-propelled robotic device that moves through bodily and other passageways

Various semiconductor devices can be formed at the end of a common fabrication process, thereby significantly improving manufacturing flexibility, by selectively wiring bonding different CMOS circuits to different MEMS, which are formed on the same semiconductor die. A semiconductor device that has a number of CMOS circuits and a number of MEMS is formed on the same semiconductor wafer in adjacent regions on the wafer, and then diced such that the CMOS circuits and the MEMS are formed on the same die. After dicing, different CMOS circuits and different MEMS can be selectively connected during the wire bonding step to form the different semiconductor devices.

Semiconductor wafer and die that include an integrated circuit and two or more different MEMS-based semiconductor devices

A low thermal pathway is provided from the top surface of a silicon substrate to the bottom surface of the silicon substrate by first forming aluminum plugs in the bottom surface of the silicon substrate that contact the silicon substrate and extend up towards the top surface, and then heating the aluminum plugs to a temperature for a period of time sufficient to cause spikes to grow from the sides of the aluminum plugs.

Method of forming a semiconductor die with aluminum-spiked heat pipes

A cellular telephone handset utilizes an electrically-steered directional antenna to increase the received signal strength when the handset is in a poor signal environment. As a result, the handset reduces the need for an end user to tilt and twirl their head to try and find the direction of the strongest signal strength.

Cellular telephone handset with increased reception sensitivity and reduced transmit power levels

NPN and PNP bipolar junction transistors are formed on a wafer in a fabrication process that eliminates the heavily-doped buried layers and the lightly-doped epitaxial layer by forming back side collector contacts that are electrically connected to an interconnect structure on the top side of the wafer with through-the-wafer contacts.

Bipolar transistor and method of forming the bipolar transistor with a backside contact

A method of forming capacitive structures in trenches which have been formed in a multilevel metal interconnect structure is disclosed. The method of forming the capacitive structures allows the capacitance of the multilevel metal interconnect structure to be adjusted, and thereby optimized, to respond to signals from devices that are formed on an underlying substrate.

Method of forming a metal interconnect with capacitive structures that adjust the capacitance of the interconnect

Detection and control circuitry are added to a conventional power supply to detect when a load, such as a portable electronic device, has been disconnected from the power supply and, when disconnected, interrupt a current path to the primary windings of a transformer within the power supply to substantially reduce the amount of reactive power that is consumed by the power supply.

Power supply with reduced power consumption when a load is disconnected from the power supply

Minute materials which can be undesirably left on the backside of a semiconductor wafer are detected by scanning the semiconductor wafer with an infra-red (IR) light following the completion of a process step that forms and then selectively removes a material from the top surface of the wafer. Any detected material can then be removed from the backside of the wafer to ensure that that backside of the wafer is clean and flat.

Backside defect detector and method that determines whether unwanted materials are present on the backside of a semiconductor wafer

An integrated circuit inductor has a number of vertical metal segments, a number of lower metal straps that electrically connect alternate metal segments, and a number of upper metal straps that electrically connect alternate metal segments to form a continuous electrical path. Layers of a ferromagnetic material are formed normal to the metal segments to extend past at least two sides of each metal segment to increase the inductance of the inductor.

Semiconductor die with an integrated inductor

Semiconductor die with aluminum-spiked heat pipes

A semiconductor sensor device is formed using MEMS technology by placing a thin layer of single-crystal silicon, which includes semiconductor devices, over a cavity, which has been formed in a semiconductor material. The thin layer of single-crystal silicon can be formed by forming the semiconductor devices in the top surface of a single-crystal silicon wafer, thinning the silicon wafer to a desired thickness, and then dicing the thinned wafer to form silicon layers of a desired size. The MEMS device can be used to implement a pressure sensor, microphone, temperature sensor, and a joystick.

MEMS semiconductor sensor device

The width of the gate of a MOS transistor can be formed to have nanometer-width gate sizes, which are substantially less than the minimum feature size that can be photolithographically obtained with the method that is used to fabricate the MOS transistors, in a litho-less process by utilizing a conductive side wall spacer to form the gate of the MOS transistor.

Method of forming a MOS transistor with a litho-less gate

Thermal hot spots in the substrate of a semiconductor die, and the required surface area of the semiconductor die, are substantially reduced by forming thermal or thermal and electrical pipes in the substrate that extend from a bottom surface of the substrate to a point near the top surface of the substrate.

Growing community of inventors

Redwood City, CA, United States of America

Visvamohan Yegnashankaran