Intel Corporation

Vishram P Dalvi

Rodney R Rozman

Christopher John Haid

Jerry A Kreifels

Jahanshir J Javanifard

Jeffrey J Peterson

Jeff Evertt

Joseph W Tsang

Peter K Hazen

Charles W Brown

Alan E Baker

David A Leak

Thomas C Price

Fasil G Bekele

Mase J Taub

Sanjay S Talreja

Robert E Larsen

Bharat M Pathak

Edward M Babb

Marcus E Landgraf

A method and apparatus including a first circuit configured to receive multiple instructions including a first instruction having a first execution time, and to generate a first signal having a state dependent on the first execution time; a second circuit configured to receive the first signal and to generate a clock signal including a clock cycle having a period dependent on the state of the first signal; and a third circuit configured to receive the clock signal and execute a portion of the first instruction during the clock cycle, the first execution time corresponding to the portion of the first instruction.

Instruction dependent clock scheme

A status register for a memory device. The status register provides a programming suspend status signal and a protection status signal. The programming suspend status signal indicates whether a programming operation is suspended. If the processor knows that a programming operation to a specific memory location is suspended, then the processor may request that a data modification operation to another memory location be performed while the programming operation is suspended. The protection status signal indicates whether an attempted data modification operation failed due to a protected memory block versus another type of device failure. Protecting or locking a memory block prevents the modification of data stored in a particular memory block.

Programming suspend status indicator for flash memory

Programming protection status indicators for flash memory

A method and apparatus suspend a program operation in a nonvolatile writeable memory. The nonvolatile writeable memory includes a memory array, a command register and memory array control circuitry. The command register decodes a program suspend command and provides a suspend signal as an output. The memory array control circuitry is coupled to receive the suspend signal from the command register. The memory array control circuitry performs a program operation in which data is written to the memory array. The memory array control circuitry suspends the program operation upon receiving the suspend signal.

Nonvolatile writeable memory with program suspend command

A flash memory device including a first memory array, block locking circuitry, and control circuitry. The memory array includes a plurality of memory blocks each having a memory cell. The block locking circuitry includes a plurality of block lock-bits and a master lock-bit. Each block lock-bit corresponds to one of the plurality of memory blocks and indicates whether the corresponding memory block is locked. The master lock-bit indicates whether the plurality of block lock-bits are locked. The control circuitry is configured to receive a passcode that causes the control circuitry to override the master lock-bit. The control circuitry may also be configured to receive a passcode that causes the control circuitry to override one of the block lock-bits.

Block locking and passcode scheme for flash memory

A flash memory device including a first memory array, a control circuit coupled to the first memory array, and a second independent memory array coupled to the control circuit. The first memory array includes a plurality of memory blocks each having a memory cell. The memory cell may be a nonvolatile flash memory cell. The control circuit controls the programming, erasing, and reading of the memory cells. The second memory array includes a plurality of block lock-bits each corresponding to one of the plurality of memory blocks. The state of each block lock-bit indicates whether the memory cell in the corresponding memory block is locked. The second memory array may also include a master lock-bit that indicates whether the block lock-bits are locked.

Block locking apparatus for flash memory

A method of writing to flash memory cells in a flash memory device. The flash memory device includes a first memory array and a second independent memory array. The first memory array includes memory blocks each having a memory cell. The second independent memory array includes block lock-bits each corresponding to one of the memory blocks. The method of writing to a memory cell in one of the memory blocks of the first memory array includes the steps of issuing a command to write to the memory cell, determining if a corresponding block lock-bit in the second independent memory array is set, and writing to the memory cell if the corresponding block lock-bit is not set.

Method of programming, erasing, and reading block lock-bits and a master

A method and apparatus suspend a program operation in a nonvolatile writeable memory. The nonvolatile writeable memory includes a memory array, a command register, and memory array control circuitry. The command register decodes a program suspend command and provides a suspend signal as an output. The memory array control circuitry is coupled to receive the suspend signal from the command register. The memory array control circuitry performs a program operation in which data is written to the memory array. The memory array control circuitry suspends the program operation upon receiving the suspend signal.

Method and apparatus for suspending the writing of a nonvolatile

A power supply lockout circuit that prevents corruption of nonvolatile writeable memory data is described. The power supply lockout circuit monitors the power supply signals from several power supplies. The power supply lockout circuit locks out commands writing to the nonvolatile writeable memory when any one of the monitored power supply signals coupled to the nonvolatile writeable memory is below a specified signal level. The power supply lockout circuit includes a detector which provides a lockout signal to the nonvolatile writeable memory when a power supply signal is less than a prespecified voltage. The power supply lockout circuit also includes a sampling circuit which provides other lockout signals to the nonvolatile writeable memory when a different power supply signal is less than a reference voltage.

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Folsom, CA, United States of America

Vishram P Dalvi