International Business Machines Corporation

Perraud, Laurent Claude

Vishnubhai Vitthalbhai Patel

Alfred Grill

Christopher Vincent Jahnes

Katherine Lynn Saenger

Stephen McConnell Gates

Son Van Nguyen

Edward M Engler

Daniel C Edelstein

Katherina E Babich

Bernard S Meyerson

Robert R Schumaker

Deborah A Neumayer

David Robert Medeiros

Laurent Claude Perraud

Alessandro Cesare Callegari

Stephan Alan Cohen

Michael Anthony Moser

Jurij R Paraszczak

Stephen Alan Cohen

Celia E Yeack-Scranton, Deceased

Sampath Purushothaman

Marie Angelopoulos

Steven John Koester

Richard Joseph Gambino

Michael John Brady

Xinhui Wang

Scott David Halle

Darryl D Restaino

Arpan Pravin Mahorowala

John Patrick Hummel

Clinton David Snyder

Dinkar Virendra Singh

Bodil E Braren

Egidio E Marotta

Nanik Bakhru

Rajiv V Joshi

Cheng Tzong Horng

Alejandro Gabriel Schrott

Hosadurga K Shobha

David Edward Kotecki

Panayotis Constantinou Andricacos

Michael Wayne Lane

Robert Rosenberg

Kelly Malone

Mark A Jaso

Thomas J Haigh, Jr

Rodney T Hodgson

Gary W Rubloff

John Acocella

James H Comfort

Gottlieb S Oehrlein

Michael A Russak

Gregory Scott Hopper

Julien Fontaine

Paul B Jones

Clinton Davis Snyder

Kenneth Herbert Nichols

Nilda Martinez Rivera

Deborah Newmayer

A first PECVD process incorporating a silicon oxide precursor alone and then with an organo-silicon precursor with increasing flow while the flow of the silicon oxide precursor is reduced to zero provides a graded carbon adhesion layer whereby the content of C increases with layer thickness and a second PECVD process incorporating an organo-silicon precursor including an organic porogen provides a multiphase ultra-low k dielectric. The multiphase ultra-low k PECVD process uses high frequency radio frequency power just above plasma initiation in a PECVD chamber. An energy post treatment is also provided. A porous SiCOH dielectric material having a k less than 2.7 and a modulus of elasticity greater than 7 GPa is formed.

Process to form an adhesion layer and multiphase ultra-low k dielectric material using PECVD

A method of forming a porous composite material in which substantially all of the pores within the composite material are small having a diameter of about 5 nm or less and with a narrow PSD is provided. The porous composite material includes a first solid phase having a first characteristic dimension and a second phase comprised of pores having a second characteristic dimension, wherein the characteristic dimensions of at least one of said phases is controlled to a value of about 5 nm or less.

Materials containing voids with void size controlled on the nanometer scale

A semiconductor device structure and method for manufacture includes a substrate having a top first layer; a second thin transition layer located on top of the first layer; and, a third layer located on top of the transition layer, wherein the second thin transition layer provides strong adhesion and cohesive strength between the first and third layers of the structure. Additionally, a semiconductor device structure and method for manufacture includes an insulating structure comprising a multitude of dielectric and conductive layers with respective transition bonding layers disposed to enhance interfacial strength among the different layers. Further, an electronic device structure incorporates layers of insulating and conductive materials as intralevel or interlevel dielectrics in a back-end-of-the-line ('BEOL') wiring structure in which the interfacial strength between different pairs of dielectric films is enhanced by a thin intermediate transition bonding layer.

Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the same

The present invention provides a porous composite material in which substantially all of the pores within the composite material are small having a diameter of about 5 nm or less and with a narrow PSD. The inventive composite material is also characterized by the substantial absence of the broad distribution of larger sized pores which is prevalent in prior art porous composite materials. The porous composite material includes a first solid phase having a first characteristic dimension and a second solid phase comprised of pores having a second characteristic dimension, wherein the characteristic dimensions of at least one of said phases is controlled to a value of about 5 nm or less.

A method for fabricating a thermally stable ultralow dielectric constant film including Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition ('PECVD') process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made

A diffusion barrier useful in semiconductor electronic devices, such as multi-level interconnect wiring structures, is provided. The diffusion barrier is characterized as having a low-dielectric constant of less than 3.5, preferably less than 3.0, as well as being capable of substantially preventing Cu and/or oxygen from diffusing into the active device areas of the electronic device. Since the diffusion barrier has a low-dielectric constant, the diffusion barrier has only a minor effect on the effective dielectric constant of the interconnect structure. The low-k diffusion barrier includes atoms of Si, C, H and N. The N atoms are non-uniformly distributed within the low-k diffusion barrier. Optionally, the low-k diffusion barrier may include atoms of Ge, O, halogens such as F or any combination thereof.

Diffusion barrier with low dielectric constant and semiconductor device containing same

A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition ('PECVD') process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

A structure and a method are disclosed of an enhanced T-gate for modulation doped field effect transistors (MODFETs). The enhanced T-gate has insulator spacer layers sandwiching the neck portion of the T-gate. The spacer layers are thinner than the T-bar portion overhang. The insulating layer provides mechanical support and protects the vulnerable neck portion of the T-gate from chemical attack during subsequent device processing, making the T-gate structure highly scalable and improving yield. The use of thin conformal low dielectric constant insulating layers ensures a low parasitic gate capacitance, and reduces the risk of shorting gate and source metallurgy when source-to-gate spacings are reduced to smaller dimensions.

Enhanced T-gate structure for modulation doped field effect transistors

A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film, specific precursor materials having a ring structure are preferred.

Hydrogenated oxidized silicon carbon material

A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition (&ldquo;PECVD&rdquo;) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, cyclic siloxanes and organic molecules containing ring structures, for instance, tetramethylcycloterasiloxane and cyclopentene oxide.

Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made

A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition (&ldquo;PECVD&rdquo;) process is disclosed. To enable the fabrication of thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, cyclic siloxanes and organic molecules containing ring structures, for instance, tetramethylcycloterasiloxane and cyclopentene oxide. To stabilize plasma in the PECVD reactor and thereby improve uniformity of the deposited film, CO is added to TMCTS as a carrier gas, or CO or a mixture of CO and O are added to the PECVD reactor.

Method for fabricating an ultralow dielectric constant material

There is provided a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms and having a covalently bonded tri-dimensional network structure and a dielectric constant of not more than 2.6. The dielectric constant film may additionally have a covalently bonded ring network. The covalently bonded tri-dimensional (i.e., three dimensional) network structure comprises Si&mdash;O, Si&mdash;C, Si&mdash;H, C&mdash;H and C&mdash;C covalent bonds and may optionally contain F and N. In the film, the Si atoms may optionally be partially substituted with Ge atoms. The dielectric constant film has a thickness of not more than 1.3 micrometers and a crack propagation velocity in water of less than 10 meters per second. There is further provided a back-end-of-the-line (BEOL) interconnect structure comprising the inventive dielectric film as a BEOL insulator, cap or hardmask layer.

Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device

A semiconductor device structure and method for manufacture includes a substrate having a top first layer of dielectric material; a second layer of material selected from the group including: amorphous Silicon (a-Si), amorphous Ge (a-Ge) or alloys thereof, located on top of the first layer; and, a third layer located on top of the a-Si, a-Ge, or alloys thereof layer, wherein the second layer provides adhesion between the first and third layers of the structure. Additionally, a semiconductor device structure and method for manufacture includes an insulating structure comprising a multitude of dielectric and conductive layers with respective a-Si, a-Ge, or alloys thereof bonding layers disposed to enhance adhesion between the different layers. Further, an electronic device structure incorporates layers of insulating and conductive materials as intralevel or interlevel dielectrics in a back-end-of-the-line (&ldquo;BEOL&rdquo;) wiring structure in which the adhesion between different dielectric is enhanced by an intermediate a-Si, a-Ge, or alloys thereof bonding layer. The thin a-Si, a-Ge, or alloys thereof layer may be hydrogenated or non-hydrogenated, or even partially oxidized.

Structures with improved adhesion to Si and C containing dielectrics and method for preparing the same

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Yorktown Heights, NY, United States of America

Vishnubhai Vitthalbhai Patel