Micron Technology Incorporated

Silicon Storage Technology, Inc.

Other

Programmable Microelectronics Corporation

Intel Corporation

Lodestar Licensing Group LLC

Micro Technology, Inc.

Information Storage Devices, Inc.

Vishal Sarin

Frankie F Roohparvar

Jung-Sheng Hoei

Jung Sheng Hoei

Hieu Van Tran

William Henry Radke

Jonathan Pabustan

Anh Ly

Sang Thanh Nguyen

Loc Bao Hoang

Tommaso Vali

Hung Quoc Nguyen

Dzung Huu Nguyen

Allahyar Vahidimowlavi

William Saiki

Violante Moschiano

Thuan Vu

Nasrin Jaffari

Wingfu AAron Lau

Luca De Santis

Kenneth James Eldredge

Isao Nojima

Theodore T Pekny

Giovanni Naso

Frankie F Roohpavar

Giovanni Santin

Vikram Kowshik

Giulio-Giuseppe Marotta

Tomoharu Tanaka

Aaron S Yip

Andy Teng-Feng Yu

Jason Guo

Siraj Fulum Mossa

Chia-Shing Jason Yu

Dana Lee

Jack Frayer

Taber H Smith

Walter E Croft

Alex E Henderson

Lawrence D Engh

Raymond M Chu

Chinh D Nguyen

Frankie E Roohparvar

Tam Huu Tran

Hung O Nguyen

Biprangshu Saha

Purackal Mammen Mammen

Sankha Subhra Saha

Niang Hangzo

Purval Sule

Sankha Saha

Sang T Nguyen

In one aspect, an analog to digital converter (ADC) for a multiply-accumulator (MAC) system comprising: an ADC control that receives a VREF and generates a plurality of timing signals to an ADC, and wherein the plurality of timing signals comprises an Ssignal, an Ssignal, an Ssignal, an ECO signal, a CLOCK signal, and a COUNTER<N:0> signal; the ADC that comprises: a pre-charge system comprising a sense capacitor that stores an integrated charge IMAC over a time T and develops voltage VMAC, and wherein the Ssignal defines the pre-charge phase of the sense capacitor.

Methods and systems of utilizing analog to digital converter (ADC) for multiply-accumulator (MAC)

In one aspect, a method for NOR flash cell-array programming in a neural circuit includes the step of erasing a cell array. The method includes the step of programming a set of reference cells of a reference cell array to a target reference threshold voltage (V). The method includes the step of generating, with the reference cells, a current or voltage, reference signal. The method includes the step of using the reference signal to bias the neural cells during verification of program state of the neural cells to achieve their respective target threshold voltages (V). The method includes the step of programming a set of neural cells of a neural cell array to their respective target threshold voltages.

Methods and systems of cell-array programming for neural compute using flash arrays

Memory having an array of memory cells might include control logic configured to cause the memory to program each memory cell of a plurality of memory cells whose respective data state is higher than or equal to a first particular data state of a plurality of data states while inhibiting programming of each memory cell of the plurality of memory cells whose respective data state is lower than the first particular data state, and program each memory cell of the plurality of memory cells whose respective data state is lower than or equal to a second particular data state of the plurality of data states after programming each memory cell of the plurality of memory cells whose respective data state is higher than or equal to the first particular data state.

Two-part programming of memory cells

In one aspect, a system for analog in-memory compute for a neural network includes an array of neurons. Each neuron of the array of neurons receives a pulse of magnitude xi, and duration t, wherein a product xi*yi provides a current proportional to the input for a time duration t, which is a charge associated with a particular neuron in response to the input being presented to that particular neuron. A reference cell includes a gate-drain connected flash cell configuration and coupled with the array of neurons. The reference cell is programmed to a pre-determined threshold voltage Vt-ref. The reference cell receives a pre-determined current, Iref, wherein, based on the Iref and a pre-determined threshold voltage Vt-ref, a voltage is created at a drain of the reference cell.

Method for analog in-memory compute for neural networks

Memory devices might include a plurality of memory cell pairs each configured to be programmed to store a digit of data; and control circuitry configured to cause the memory device to compare the stored digit of data of each memory cell pair to a received digit of data, determine whether a match condition or a no-match condition is indicated between the stored digit of data of each memory cell pair and the received digit of data, and deem a match condition to be met between the received digit of data and the stored digits of data of the plurality of memory cell pairs in response to a match condition being determined for a majority of memory cell pairs of the plurality of memory cell pairs.

Memory devices for pattern matching based on majority of cell pair match

In one aspect, A method for computing neural network computation includes the step of, providing plurality of neurons, coupled with a plurality of inputs, through a plurality of synapses. Each neuron output is given by an equation &#x3a3;(X*Y)+b. X*Ycomprises the ith synapse of the neuron. Xcomprises a set of Xinput vectors. Each Xinput vector is translated into an equivalent electrical signal for an ith corresponding synapse of the plurality of neurons, Ycomprises a set of Yi weight vectors, wherein each Yweight vector comprises a parameter for the ith corresponding synapse of the plurality of neurons. Each synapse is a sub-system and the sub-system comprises a negative vector neural circuit, a positive vector neural circuit, and a set of four non-volatile memory weight cells for computation. The method includes the step of identifying the input vector x as a positive input vector or a negative input vector.

Methods and systems of implementing positive and negative neurons in a neural array-based flash memory

Memory having an array of memory cells might include control logic configured to cause the memory to inhibit memory cells of a first subset of memory cells from programming during each programming pulse of a first plurality of programming pulses and enable those memory cells for programming for at least one programming pulse of a second plurality of programming pulses, inhibit memory cells of a second subset of memory cells from programming during each programming pulse of the second plurality of programming pulses and enable those memory cells for programming for at least one programming pulse of the first plurality of programming pulses, and enable memory cells of a third subset of memory cells for programming during at least one programming pulse of the first plurality of programming pulses and during at least one programming pulse of the second plurality of programming pulses.

Two-part programming methods

Memory devices might include control circuitry that, when checking for a match of a stored digit of data and a received digit of data, might be configured to cause the memory device to apply a first voltage level to a control gate of a first memory cell of a memory cell pair, apply a second voltage level different than the first voltage level to a control gate of a second memory cell of that memory cell pair, determine whether that memory cell pair is deemed to be activated or deactivated in response to applying the first and second voltage levels, and deem a match between the stored digit of data and a received digit of data in response, in part, to whether that memory cell pair is deemed to be deactivated.

Memory devices for pattern matching

Methods include receiving a pattern to be searched in a memory having a plurality of sets of memory elements with each set coupled to a separate data line and corresponding to a same set of bit positions of the pattern. Methods further include receiving a pattern of data to be programmed into a memory, programming a first data state into one memory cell of each cell pair of a plurality of cell pairs of a memory array, and programing a second data state into another memory cell of each cell pair of the plurality of cell pairs for each bit position of the pattern. Memory configured to facilitate such methods include a plurality of cell pairs, each cell pair of the plurality of cell pairs programmed to store a same bit of data corresponding to a particular bit position of a pattern to be searched in the memory.

Methods and apparatus for pattern matching in a memory containing sets of memory elements

Method of operating a memory include increasing respective threshold voltages of a first subset of memory cells of a plurality of memory cells to threshold voltage levels higher than a particular voltage level in response to applying a first plurality of programming pulses, and subsequently increasing respective threshold voltages of a second subset of memory cells of the plurality of memory cells to threshold voltage levels lower than the particular voltage level in response to applying a second plurality of programming pulses, wherein the first plurality of programming pulses have respective voltage levels within a first range of voltage levels, the second plurality of programming pulses have respective voltage levels within a second range of voltage levels, and a lowest voltage level of the first range of voltage levels is lower than or equal to a highest voltage level of the second range of voltage levels.

Methods include receiving a pattern to be searched in a memory having a plurality of sets of memory elements with each set coupled to a separate data line and corresponding to a same set of bit positions of the pattern. Methods further include receiving a pattern of data to be programmed into a memory, programming a first data state into one memory cell of each cell pair of a plurality of cell pairs of a memory array, and programming a second data state into another memory cell of each cell pair of the plurality of cell pairs for each bit position of the pattern. Memory configured to facilitate such methods include a plurality of cell pairs, each cell pair of the plurality of cell pairs programmed to store a same bit of data corresponding to a particular bit position of a pattern to be searched in the memory.

Methods and apparatus for pattern matching having memory cell pairs coupled in series and coupled in parallel

Memory devices include control logic configured to set a first start program voltage and a first stop program voltage, to load actual first data for cells to be programmed to a level greater than or equal to a first level, and to load inhibit data for cells to be programmed to a level less than a second level. After programming the cells to be programmed to the level greater than or equal to the first level, the control logic is further configured to set a second start program voltage and a second stop program voltage, to load inhibit data for the cells programmed to the level greater than or equal to the first level, and to load actual second data for the cells to be programmed to the level less than the second level, wherein the first level is one level higher than the second level.

Methods and apparatus for pattern matching using redundant memory elements

Memories having a plurality of cell pairs, where each cell pair of the plurality of cell pairs is programmed to store a same bit of data corresponding to a particular bit position of a pattern to be searched in a memory are useful in mitigating match errors, such as in a CAM (Content Addressable Memory) memory device.

Methods for pattern matching using multiple cell pairs

A first memory cell is programmed to a first level using a first set of program pulses within a first programming voltage range. A second memory cell to be programmed to a second level less than the first level is inhibited while programing the first memory cell to the first level. After programing the first memory cell to the first level, the second memory cell is programmed to the second level using a second set of program pulses within a second programming voltage range, where the first programming voltage range overlaps the second programming voltage range. The first memory cell that is programmed to the first level is inhibited while programing the second memory cell to the second level.

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Cupertino, CA, United States of America

Vishal Sarin