Massachusetts Institute of Technology

Other

Leland Stanford Junior University

Virginia Spanoudaki

Robert Samuel Langer

Daniel Griffith Anderson

Alan Pradip Jasanoff

Aviad Hai

Craig Steven Levin

A cross-modal interface includes a multi-modal sensor configured to concurrently receive multiple input signals with each input signal being provided from a different imaging modality and in response thereto providing a single cross-modal output signal to processing circuitry which processes the single cross-modal output signal provided thereto and generates an output comprising information obtained or otherwise derived from each of or a combination of the different imaging modalities.

Interface responsive to two or more sensor modalities

Embodiments described herein relate to detectors and their method of use for sensing electromagnetic fields, electromagnetic signals, biochemical analytes, and/or other conditions in subjects. The device may include an inductively-coupled implantable coil-based transducer that converts electrical, photonic, biochemical signals, and/or other appropriate signals and/or conditions originating in tissues and/or transplanted tissue grafts into changes in a property of the transducer, such as a resonance frequency, that may be detected using an alternating magnetic field that may be provided by a magnetic resonance imaging (MRI) signal and/or other appropriate source. In some embodiments, the detector comprises a FET that changes state upon detection of a subject condition of interest. The change in the FET may change the resonance frequency of an associated LC or RLC circuit. The change in resonance frequency may change the brightness and/or intensity of the detector when detected by an MRI scanner or other appropriate scanner.

Tunable detectors

A sensor comprises a substrate; an array of nanowire field effect transistors (NWFETs) formed in said substrate, each of the NWFETs having source, drain and gate terminals; a nanowire coupled between the source terminal and the drain terminal of each NWFET; and a layer of radiation sensitive material disposed over said NWFETs and said nanowires with each of the source, drain and gate terminals configured to be coupled to respective ones of first, second or third reference potentials, wherein each NWFET is configured such that the conductivity between the source and drain changes in response to radiation absorbed in the layer of radiation sensitive material such that the sensor generates an output signal in response to radiation absorbed by the radiation sensitive material.

Nanowire FET imaging system and related techniques

A method for extracting photon depth-of-interaction of an incident photon in a crystal with a reflective coating optically coupled to all sides of the crystal, except for an opening, wherein a photodetector is optically coupled to the opening. A pulse shape of a photodetector output as a result of detection of scintillation photons from the crystal generated by the incident photon is measured, wherein the reflective coating optically coupled to all sides of the crystal, except for an opening optically coupled to the photodetector reflects the scintillation photons passing to all sides of the crystal, except for the opening optically coupled to the photodetector. The pulse shape is used to determine photon depth-of-interaction within the crystal.

Growing community of inventors

Cambridge, MA, United States of America

Virginia Spanoudaki