USA As Represented by Secretary of the Navy

Virginia D Wheeler

Charles R Eddy, Jr

Marc Currie

Francis J Kub

Travis J Anderson

David Kurt Gaskill

Rachael L Myers-Ward

Karl D Hobart

Igor Vurgaftman

Jon-Paul Maria

Joshua D Caldwell

Glenn Jernigan

Nelson Garces

Andrew D Koehler

Michael Anthony Mastro

Robert E Stahlbush

Neeraj Nepal

Nadeemmullah A Mahadik

Sandra C Hangarter

Marko J Tadjer

Guy Beadie

David Shahin

A method for locally annealing and crystallizing a thin film by directing ultrashort optical pulses from an ultrafast laser into the film. The ultrashort pulses can selectively produce an annealed pattern and/or activate dopants on the surface or within the film.

Ultrafast laser annealing of thin films

A high electron mobility transistor (HEMT) and method of producing the same are provided. The HEMT includes a barrier layer formed on a GaN layer. The HEMT also includes a ZrOgate dielectric layer formed by either a ZTB precursor, a TDMA-Zr precursor, or both. The HEMT may also include a recess in the barrier layer in the gate region of the HEMT. The HEMTs may operate in an enhancement mode.

High electron mobility transistors and methods for fabricating the same

A tunable spectral filter comprising a phase change material is incorporated into a multilayered dielectric structure. The dielectric permittivity, and thus the filter properties, of the structure can be modified by producing a change in the phase change material, e.g., causing a metal-insulator transition. By controllably causing such a change in the dielectric permittivity of the phase change material, the spectral transmittance and reflectance of the structure, and thus its filter properties, can be modified to provide a predetermined transmittance or reflectance of electromagnetic radiation incident on the structure. In preferred embodiments, the phase change material layer is a vanadium dioxide (VO) film formed by atomic layer deposition (ALD).

Tunable spectral filters

A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.

Growth of crystalline materials on two-dimensional inert materials

A method of: providing an off-axis 4H&#x2014;SiC substrate, and etching the surface of the substrate with hydrogen or an inert gas.

Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process

A method of: providing an off-axis silicon carbide substrate, and etching the surface of the substrate with a dry gas, hydrogen, or an inert gas.

Systems and method are provided for depositing metal on GaN transistors after gate formation using a metal nitride Schottky gate. Embodiments of the present disclosure use a 'diamond last' process using thermally stable metal nitride gate electrodes to enable thicker heat spreading films and facilitate process integration. In an embodiment, the 'diamond last' process with high thermal conductivity diamond is enabled by the integration of thermally stable metal-nitride gate electrodes.

Diamond on III-nitride device

IR emission devices comprising an array of polaritonic IR emitters arranged on a substrate, where the emitters are coupled to a heater configured to provide heat to one or more of the emitters. When the emitters are heated, they produce an infrared emission that can be polarized and whose spectral emission range, emission wavelength, and/or emission linewidth can be tuned by the polaritonic material used to form the elements of the array and/or by the size and/or shape of the emitters. The IR emission can be modulated by the induction of a strain into a ferroelectric, a change in the crystalline phase of a phase change material and/or by quickly applying and dissipating heat applied to the polaritonic nanostructure. The IR emission can be designed to be hidden in the thermal background so that it can be observed only under the appropriate filtering and/or demodulation conditions.

Frequency- and amplitude-modulated narrow-band infrared emitters

Systems and methods are provided that enable the production of semiconductor devices having a metal nitride layer in direct contact with a semiconductor layer to form a Schottky diode, such as a TiN gate on an AlGaN/GaN high electron mobility transistor (HEMT). Metal nitrides offer exceptional thermal stability and a lower diffusion coefficient. Technology enabled by embodiments of the present disclosure improves the reliability of GaN-based microwave power transistors.

Metal nitride alloy contact for semiconductor

Frequency- and amplitude- modulated narrow-band infrared emitters

Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-&#x3ba; oxide-based dielectric compounds such as AlO, HfO, TaO, or TiOare provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.

Growing community of inventors

Alexandria, VA, United States of America

Virginia D Wheeler