Intel Corporation

Virgil N Kynett

Mickey L Fandrich

Steven E Wells

Kurt B Robinson

Jerry A Kreifels

Terry L Kendall

Richard P Garner

Mark D Winston

Alan E Baker

George Hoekstra

Dave M Brown

Owen W Jungroth

Thomas C Price

Salim B Fedel

Jerry A Kreiffels

Kelvin W Lee

A method for calibrating analog sensor measurements within a computer system is disclosed. The method includes the steps of generating an analog sensor measurement result, reading at least two values that define a curve from a memory device, and calculating a calibrated result using the analog sensor measurement result and the values that define the curve.

Method and apparatus for calibrating analog sensor measurement

A method for updating the content of EEPROM memory used for controlling processes run on a microprocessor used to control the operations of a long term memory array which includes moving an update process stored in the EEPROM memory to a random access memory associated with the microprocessor; and then using the update process stored in random access memory for erasing the contents of the EEPROM memory, and furnishing data to the microprocessor on a sector by sector basis from a host computer through an interface used by the microprocessor to provide data to the long term memory array. The data furnished by the host is written sector by sector to the EEPROM memory until the EEPROM memory has been updated.

Method and apparatus for updating flash memory resident firmware through

Circuitry for propagating test mode signals associated with a memory array including a plurality of circuits for storing test mode signals, apparatus for selectively providing test mode data to each of the circuits for storing test mode signals, and apparatus for simultaneously activating all of the circuits for storing test mode signals to provide output signals to be used for testing.

Circuitry for propagating test mode signals associated with a memory

A control circuit for a computer component circuit which includes oscillator apparatus for providing square wave pulses at a prescribed frequency, gating apparatus for providing the square wave pulses at an output terminal for use as a clock for the component circuit, timing apparatus for sensing a period during which the component circuit has not performed an operation, and apparatus for disabling the gating apparatus for providing the square wave pulses at an output terminal.

Power management system for components used in battery powered

A circuit for selectively protecting data stored within a range of addresses from programming and erasing. The circuit includes a circuit for generating an active lock signal. The circuit generates an active lock signal when a protect signal is active and an address signal represents an address within the protected range. Both erasure and programming are prevented while the lock signal is active. Programming and erasure of protected data is permitted while the lock signal is inactive. A method for selectively protecting data within a range of addresses on a non-volatile semiconductor memory from programming or erasure is also described.

Circuitry and method for selectively protecting the integrity of data

Circuitry for programming a non-volatile semiconductor memory is described. The circuitry includes a circuit for enabling the non-volatile semiconductor memory to program a bit of the non-volatile semiconductor memory. The enabling circuit causes the bit to be programmed according to a pattern bit. The circuitry also includes a second enabling circuit, which enables the non-volatile semiconductor memory to verify the programming of the bit. Circuitry for erasing a non-volatile semiconductor memory is disclosed. A method for programming a nonvolatile semiconductor memory is also described.

Circuitry and method for programming and erasing a non-volatile

A nonvolatile memory comprises a memory array and a control circuit coupled to the memory array for performing memory operations with respect to the memory array. A storage circuit associated with the memory array is provided for storing a data. When the data is stored in the storage circuit, the memory array is locked from being accessed for the memory operations. A logic circuit is coupled to the control circuit and the storage circuit for preventing the control circuit from accessing the memory array with respect to the memory operations in accordance with the data. The logic circuit prevents the control circuit from accessing the memory array when the storage circuit stores the data. A control input is provided for receiving a control signal. The control signal is applied to the logic circuit and can be in a first voltage state and a second voltage state. When the control signal is in the first voltage state, the logic circuit is enabled to lock the memory array with respect to the memory operations in accordance with the data stored in the storage circuit. When the control signal is in the second voltage state, the logic circuit is disabled to lock the memory array and the memory array is allowed for the memory operations regardless of the data stored in the storage circuit.

Nonvolatile memory with blocks and circuitry for selectively protecting

A command state machine for control circuitry associated with a memory array which control circuitry includes apparatus for programming and erasing the memory array including first state machine logic apparatus for providing control signals for reading the memory array and for initiating operations of the apparatus for programming and erasing the memory array in response to commands, and second state machine logic apparatus for controlling information derived from the memory array, the first and second state machine logic apparatus being adapted to assume predetermined states in response to any invalid command which have no adverse affect on the memory array or the control circuitry.

Command interface between user commands and a memory device

Erase control circuitry for erasing a flash memory array. The erase control circuitry resides on the same substrate as the flash memory array, along with a command state machine. The command state machine recognizes and externally generated erase command applied to the terminals and generates an active erase control signal, to which the erase control circuitry responds. The erase control circuitry includes precondition pulse application circuitry, erase pulse application circuitry and erase verification circuitry. The precondition pulse application circuitry preconditions the array by programming each bit in the flash memory to a threshold voltage level representative of a programmed state. The erase pulse application circuitry applies a single erase pulse at a time to the flash memory array to erase the flash array by bringing the threshold voltage level of each cell in the array to a level representative of an erased state. The erase verification circuitry verifies the erasure of the flash memory array on a byte by byte basis. If the byte currently being verified has been erased; the erase verification circuitry brings a match signal to an active level. The erase control circuitry determines whether additional erase pulses should be applied to the flash array based upon the match signal and the number of erase pulses previously applied to the flash array described is program control circuitry and methods of programming and erasing a flash memory array in response to two step command sequences.

A status register in a non-volatile semiconductor memory is described. The status register outputs to pins of the non-volatile semiconductor memory a number of signals that indicate the status of program and erase operations performed on the memory array of the non-volatile semiconductor memory. The status register includes a clock circuit that generates a clock signal in response to an output enable signal. The clock signal is coupled to a pair of latches that respond by coupling their signals to the pins. One latch couples an erase fail signal to a pin to indicate whether the memory array has been sucessfully erased. The other latch couples a program fail signal to a pin to indicate whether an addressed memory cell of the memory array has been sucessfully programmed.

Circuitry for suspending an automated sequence for a nonvolatile semiconductor memory is described. The circuitry and memory reside on the same substrate. The circuitry includes a circuit for suspending erasure at a predetermined state of the erase sequence when a suspend signal is active and a circuit for resuming erasure at a predetermined state of the erase sequence when the suspend signal goes inactive. A method for suspending automated erasure sequence of a non-volatile semiconductor memory is also described. A suspend signal is received and erasure is suspended after a first erasure step of the erase sequence if suspend signal is active. Erasure resumes at a second erasure step of the erase sequence when the suspend signal goes inactive.

Circuitry and method for suspending the automated erasure of a

A method for writing data to an entry in a portion of a flash EEPROM memory array during a period in which that portion of the array is being erased and writing is prohibited. The method includes writing the data to a new entry position apart from the portion of the array which is being erased along with a revision number which is greater than the revision number of the original data in the original portion of the array, writing of the busy condition of the original entry to a temporary storage position apart from the portion of the array which is being erased, and invalidating entries listed in the temporary storage position when the erase operation is concluded.

Method for writing to a flash memory array during erase suspend intervals

An arrangement for generating signals for generating a particular set of test conditions within a digital circuit including a plurality of latches for storing individual bits of data representing individual operations to be accomplished within the digital circuitry, the latches each having input and output terminals; the output terminals of each of the latches being connected to individual portions of the digital circuitry to effect an individual operation thereby; apparatus connected to the input terminals of the latches for setting individual selected ones of the latches to provide selected test conditions; and apparatus for transferring the condition of a selected number of the latches simultaneously to effect a selected test condition.

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El Dorado Hills, CA, United States of America

Virgil N Kynett