Cisco Technology, Inc.

Sioptical, Inc.

Lightwire, Inc.

Other

Vipulkumar K Patel

Prakash B Gothoskar

Kalpendu Shastri

Soham Pathak

Mark Andrew Webster

Robert Keith Montgomery

Margaret Ghiron

Katherine A Yanushefski

Sean P Anderson

David Piede

Dominic F Siriani

Kishor V Desai

Matthew Joseph Traverso

Bipin Dama

Jock T Bovington

Ravi Sekhar Tummidi

Ravinder Kachru

Mary Nadeau

John Matthew Fangman

Ashley J Maker

Sandeep Razdan

Aparna R Prasad

Ming Gai Stanley Lo

Norbert Schlepple

Weizhuo Li

Xunyuan Zhang

Donald Benjamin Adams

Rao Yelamarty

Kumar Satya Harinadh Potluri

Utpal Kumar Chakrabarti

Alexey V Vert

Craig S Appel

Igal I Bayn

Thomas Robert Daugherty

Soha Namnabat

Anthony D Kopinetz

Kaushik Patel

Chris Togami

Shrenik Deliwala

Paulius Mosinskis

Stefan Pfnuer

Yi Ho Lee

Steven Luther Moyer

Harvey L Wagner

Mittu Pannala

Ashley J M Erickson

Craig Young

Duane Stackhouse

Paul Ton

Christopher J Lang

An apparatus includes a ribbon, an optical waveguide, and an IC. The ribbon includes a first end. The optical waveguide is disposed within the ribbon and terminates at the first end. The IC includes a curved surface. The first end of the ribbon bends to mate with the curved surface such that the optical waveguide is optically coupled to a corresponding waveguide in the IC.

Opto-electrical flexible glass interposer

Embodiments provide for an optical modulator, comprising: a lower guide, comprising: a lower hub, made of monocrystalline silicon; and a lower ridge, made of monocrystalline silicon that extends in a first direction from the lower hub; an upper guide, including: an upper hub; and an upper ridge, made of monocrystalline silicon that extends in a second direction, opposite of the first direction, from the upper hub and is aligned with the lower ridge; and a gate oxide layer separating the lower ridge from the upper ridge and defining a waveguide region with the lower guide and the upper guide.

Optical modulator using monocrystalline and polycrystalline silicon

An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.

Electro-optical modulator using waveguides with overlapping ridges

Embodiments herein describe providing a decoupling capacitor on a first wafer (or substrate) that is then bonded to a second wafer to form an integrated decoupling capacitor. Using wafer bonding means that the decoupling capacitor can be added to the second wafer without having to take up space in the second wafer. In one embodiment, after bonding the first and second wafers, one or more vias are formed through the second wafer to establish an electrical connection between the decoupling capacitor and bond pads on a first surface of the second wafer. An electrical IC can then be flip chipped bonded to the first surface. As part of coupling the decoupling capacitor to the electrical IC, the decoupling capacitor is connected between the rails of a power source (e.g., VDD and VSS) that provides power to the electrical IC.

Integrated decoupling capacitors

Embodiments described herein include an apparatus comprising a semiconductor-based photodiode disposed on a semiconductor layer, and an optical waveguide spaced apart from the semiconductor layer and evanescently coupled with a depletion region of the photodiode. The photodiode may be arranged as a vertical photodiode or a lateral photodiode.

Evanescent coupling of photodiode with optical waveguide

Embodiments herein describe an optical system that includes a photonic integrated circuit (PIC) bonded to a package containing an electrical integrated circuit (EIC). However, this bond can prevent an edge coupler from optically aligning an optical fiber to an edge of the PIC in order to transfer optical signals. To provide room for the edge coupler, the PIC is arranged to overhang the package containing the EIC so that the package does not interfere with the ability of the edge coupler to align with the side or edge of the PIC. In this manner, an optical fiber can be optically aligned (e.g., butt coupled) to the edge of the PIC rather than having to use a grating coupler or some other less efficient optical coupling in order to transfer optical signals between the PIC and the optical fiber.

Photonics packaging platform

A laser integrated photonic platform to allow for independent fabrication and development of laser systems in silicon photonics. The photonic platform includes a silicon substrate with an upper surface, one or more through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate. The photonic platform includes a silicon substrate wafer with through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate for mating the photonic platform to a photonics integrated circuit. The photonic platform also includes a III-V semiconductor material structure wafer, where the III-V wafer is bonded to the upper surface of the silicon substrate and includes at least one active layer forming a light source for the photonic platform.

III-V laser platforms on silicon with through silicon vias by wafer scale bonding

An optical apparatus comprises a semiconductor substrate and an optical waveguide emitter. The optical waveguide emitter comprises an input waveguide section extending from a facet of the semiconductor substrate, a turning waveguide section optically coupled with the input waveguide section, and an output waveguide section extending to the same facet and optically coupled with the turning waveguide section. One or more of the input waveguide section, the turning waveguide section, and the output waveguide section comprises an optically active region.

Single-facet, variable-confinement optical waveguide amplifier

Embodiments herein describe using a double wafer bonding process to form a photonic device. In one embodiment, during the bonding process, an optical element (e.g., a high precision optical element) is optically coupled to an optical device in an active surface layer. In one example, the optical element comprises a nitride layer which can be patterned to form a nitride waveguide, passive optical multiplexer or demultiplexer, or an optical coupler.

Double bonding when fabricating an optical device

Embodiments herein describe optical interposers that utilize waveguides to detect light. For example, in one embodiment, an apparatus is provided that includes an optical detector having a first layer. The first layer includes at least one of polysilicon or amorphous silicon. The first layer forms a diode that includes a p-doped region and an n-doped region. The apparatus further includes a waveguide optically coupled to the diode and disposed on a different layer than the first layer.

Deposited Si photodetectors for silicon nitride waveguide based optical interposer

Techniques for aligning each of a plurality of optical fibers for coupling to a photonic integrated circuit (PIC). Transmission is detected from each respective optical fiber to the PIC using a probe, and the respective optical fiber is aligned based on the detected transmission. Each of the plurality of optical fibers is coupled to the PIC using at least one of: (i) laser splicing, (ii) laser spot welding, or (iii) arc welding.

Splicing optical fibers to photonic integrated circuits

A fiber array unit (FAU) includes a substrate, a plurality of optical fibers, and a lid. The substrate includes: an optical window extending through a layer of non-transparent material, a plurality of grooves, and an alignment protrusion configured to mate with an alignment receiver. The plurality of optical fibers are disposed in the plurality of grooves. The alignment protrusion is configured to align the plurality of optical fibers with an external device when mated with the alignment receiver. The plurality of optical fibers is disposed between the lid and the substrate.

Fiber coupler with an optical window

Aspects described herein include an apparatus supporting optical alignment with one or more optical waveguides optically exposed along an edge of a photonic integrated circuit (IC). The apparatus comprises a frame body comprising an upper portion defining a reference surface, and a lateral portion defining an interface for an optical connector connected with one or more optical fibers. The lateral portion comprises one or more optical components defining an optical path through the lateral portion. The one or more optical components are arranged relative to the reference surface such that the one or more optical components align with (i) the one or more optical waveguides along at least one dimension when the reference surface contacts a top surface of an anchor IC, and with (ii) the one or more optical fibers when the optical connector is connected at the interface.

Connecting optical connector with co-packaged optical device

A thermo-optic phase shifter comprises an optical waveguide comprising a P-type region comprising a first contact, an N-type region comprising a second contact, and a waveguide region disposed between the P-type region and the N-type region and having a raised portion. The thermo-optic phase shifter further comprises one or more heating elements. The one or more heating elements include one or more discrete resistive heating elements or the P-type and N-type regions driven as resistive heating elements.

Silicon thermal-optic phase shifter with improved optical performance

Growing community of inventors

Breinigsville, PA, United States of America

Vipulkumar K Patel