Commissariat a L'energie Atomique Et Aux Energies Alternatives

Ams Ag

Viorel Balan

Karl Rohracher

Jens Hofrichter

Sylvain Maitrejean

Amandine Jouve

Bernhard Poelzl

Romain Crochemore

Manuel Kaschowitz

Frank Fournel

A semiconductor device comprises a substrate body with a surface, a conductor comprising a conductor material covering at least part of the surface, and a dielectric that is arranged on a part of the surface that is not covered by the conductor. Therein, the conductor is in contact with the substrate body, the conductor and the dielectric form a layer, and a bonding surface of the layer has surface topographies of less than 10 nm, with the bonding surface facing away from the substrate body. Moreover, the semiconductor device is free of a diffusion barrier.

Semiconductor device and method for manufacturing a semiconductor device

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Premstaetten, Austria

Viorel Balan